NTF5P03T3G [ONSEMI]
Power MOSFET 5.2 A, 30 V; 功率MOSFET 5.2 A， 30 V
| 型号： | NTF5P03T3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 5.2 A, 30 V |
| 文件： | 总7页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTF5P03T3G, NVF5P03T3G
Power MOSFET
5.2 A, 30 V
P−Channel SOT−223
http://onsemi.com
Features
• Ultra Low R
DS(on)
5.2 AMPERES, 30 VOLTS
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
RDS(on) = 100 mW
• Miniature SOT−223 Surface Mount Package
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVF5P03T3G
• These Devices are Pb−Free and are RoHS Compliant
S
G
Applications
• DC−DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD
D
P−Channel MOSFET
MARKING
DIAGRAM
4
& PIN
ASSIGNMENT
1
Drain
2
4
3
SOT−223
CASE 318E
STYLE 3
AYM
5P03 G
G
1
2
3
Gate Drain Source
A
Y
M
= Assembly Location
= Year
= Date Code
5P03 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
4000 / Tape &
Reel
SOT−223
(Pb−Free)
NTF5P03T3G
4000 / Tape &
Reel
SOT−223
(Pb−Free)
NVF5P03T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011 − Rev. 5
NTF5P03T3/D
NTF5P03T3G, NVF5P03T3G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Negative sign for P−Channel devices omitted for clarity
Rating
Symbol
Max
−30
−30
20
Unit
V
Drain−to−Source Voltage
V
DSS
DGR
Drain−to−Gate Voltage (R = 1.0 MW)
V
V
GS
Gate−to−Source Voltage − Continuous
V
GS
V
1 sq in
Thermal Resistance − Junction to Ambient
R
40
3.13
25
−5.2
−4.1
−26
°C/W
Watts
mW/°C
A
THJA
D
FR−4 or G−10 PCB
Total Power Dissipation @ T = 25°C
P
A
Linear Derating Factor
Drain Current − Continuous @ T = 25°C
I
I
A
D
D
10 seconds
Continuous @ T = 70°C
A
A
Pulsed Drain Current (Note 1)
I
A
DM
Minimum
Thermal Resistance − Junction to Ambient
R
80
°C/W
Watts
mW/°C
A
THJA
D
FR−4 or G−10 PCB
P
1.56
12.5
−3.7
−2.9
−19
Total Power Dissipation @ T = 25°C
A
Linear Derating Factor
I
D
I
D
Drain Current − Continuous @ T = 25°C
A
10 seconds
A
Continuous @ T = 70°C
A
I
A
DM
Pulsed Drain Current (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T = 25°C
T , T
− 55 to 150
°C
J
stg
E
AS
mJ
J
250
(V = −30 Vdc, V = −10 Vdc, Peak I = −12 Apk, L = 3.5 mH, R = 25 W)
DD
GS
L
G
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
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2
NTF5P03T3G, NVF5P03T3G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Vdc
mV/°C
mAdc
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(V = 0 Vdc, I = −0.25 mAdc)
Temperature Coefficient (Positive)
(BR)DSS
−30
−
−28
−
−
GS
D
−
Zero Gate Voltage Drain Current
I
DSS
(V = −24 Vdc, V = 0 Vdc)
−
−
−
−
−1.0
−25
DS
GS
(V = −24 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current
(V 20 Vdc, V = 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
ON CHARACTERISTICS (Note 2)
V
R
Vdc
mV/°C
mW
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
GS(th)
−1.0
−1.75
−3.0
(V = V , I = −0.25 mAdc)
DS
GS D
−
3.5
−
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
DS(on)
−
76
107
100
150
(V = −10 Vdc, I = −5.2 Adc)
GS
D
(V = −4.5 Vdc, I = −2.6Adc)
GS
D
g
2.0
3.9
−
Mhos
pF
Forward Transconductance (Note 2)
(V = −15 Vdc, I = −2.0 Adc)
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = −25 Vdc, V = 0 V,
C
−
−
−
500
153
58
950
440
140
DS
GS
iss
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
(V = −15 Vdc, I = −4.0 Adc,
t
d(on)
−
−
−
−
−
−
−
−
−
−
−
−
10
33
38
20
16
45
23
24
15
1.6
3.5
2.6
24
48
94
92
38
110
60
80
38
−
ns
ns
DD
D
V
= −10 Vdc,
GS
t
r
R
= 6.0 W) (Note 2)
G
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
(V = −15 Vdc, I = −2.0 Adc,
DD
D
d(on)
V
G
= −10 Vdc,
GS
t
r
R
= 6.0 W) (Note 2)
Turn−Off Delay Time
Fall Time
d(off)
t
f
Gate Charge
(V = −24 Vdc, I = −4.0 Adc,
Q
T
Q
1
Q
2
nC
DS
GS
D
V
= −10 Vdc) (Note 2)
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = −4.0 Adc, V = 0 Vdc)
V
SD
Vdc
ns
S
GS
(I = −4.0 Adc, V = 0 Vdc,
−
−
−1.1
−1.5
S
GS
T = 125°C) (Note 2)
−0.89
−
J
Reverse Recovery Time
(I = −4.0 Adc, V = 0 Vdc,
t
rr
−
−
−
−
34
20
−
−
−
−
S
GS
dI /dt = 100 A/ms) (Note 2)
S
t
a
b
t
14
Reverse Recovery Stored Charge
Q
0.036
mC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Max limit * Typ
3 SIGMA
Cpk + Ť
Ť
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3
NTF5P03T3G, NVF5P03T3G
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
3
2
1
0
10
−3.9 V
−6 V
−8 V
V
≥ −10 V
T = 25°C
DS
J
−3.7 V
9
8
7
6
5
4
3
2
1
0
−4.1 V
−10 V
−4.3 V
−4.5 V
−3.5 V
−3.1 V
−2.8 V
T = 25°C
J
T = 100°C
J
V
= −2.7 V
GS
T = −55°C
J
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2
2.5
3
3.5
GATE−TO−SOURCE VOLTAGE (V)
GS,
4
4.5
5
−V DRAIN−TO−SOURCE VOLTAGE (V)
DS,
−V
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
T = 25°C
J
I
= −5.2 A
D
T = 25°C
J
V
= −4.5 V
= −10 V
GS
V
GS
3
4
5
6
7
8
9
10
1
2.5
4
5.5
7
8.5
10
−V
GS,
GATE−TO−SOURCE VOLTAGE (V)
−I DRAIN CURRENT (A)
D,
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
100
10
1.65
1.55
1.45
1.35
1.25
1.15
1.05
0.95
0.85
0.75
0.65
V
GS
= 0 V
I
V
= −5.2 A
D
= −10 V
GS
T = 125°C
J
T = 100°C
J
−50
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain−to−Source Leakage Current
Figure 5. On−Resistance Variation with
versus Voltage
Temperature
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4
NTF5P03T3G, NVF5P03T3G
TYPICAL ELECTRICAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
12.5
25
T = 25°C
J
−V
DS
V
GS
= 0 V
Q
T
10
7.5
5.0
2.5
20
15
10
5
C
C
−V
GS
iss
Q
Q
2
1
I
= −2 A
D
oss
rss
T = 25°C
J
C
0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
1000
V
= −15 V
= −4.0 A
= −10 V
DD
V
= 0 V
GS
I
D
T = 25°C
J
V
GS
t
d(off)
t
f
100
10
t
r
t
d(on)
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95
1
1
10
R , GATE RESISTANCE (W)
100
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
250
200
150
100
50
V
= 20 V
GS
I
= −6 A
D
SINGLE PULSE
= 25°C
T
C
dc
1
10 ms
1 ms
100 ms
0.1
R
LIMIT
DS(on)
10 ms
THERMAL LIMIT
PACKAGE LIMIT
0
0.01
0.1
1
10
100
25
50
75
100
125
150
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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5
NTF5P03T3G, NVF5P03T3G
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1″ PAD)
q
JA
0.05
0.1
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 13. FET Thermal Response
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6
NTF5P03T3G, NVF5P03T3G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
ꢀꢁ2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
A
q
0.08 (0003)
STYLE 3:
PIN 1. GATE
2. DRAIN
A1
L
L1
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
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NTF5P03T3/D
相关型号：
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