NTH4L045N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L;
| 型号： | NTH4L045N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L |
| 文件： | 总8页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
33ꢀmohm, 650ꢀV, M2,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
50 mꢀ @ 18 V
55 A
D
NTH4L045N065SC1
Features
G
S1: Driver Source
S2: Power Source
• Typ. R
= 33 mꢀ @ V = 18 V
GS
= 45 mꢀ @ V = 15 V
GS
DS(on)
S1
S2
Typ. R
DS(on)
• Ultra Low Gate Charge (Q
= 105 nC)
G(tot)
N−CHANNEL MOSFET
• High Speed Switching with Low Capacitance (C = 162 pF)
oss
• 100% Avalanche Tested
• T = 175°C
J
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
D
S2
S1
G
• SMPS (Switching Mode Power Supplies)
TO−247−4LD
CASE 340CJ
• Solar Inverters
• UPS (Uninterruptable Powere Supplies)
• Energy Storages
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
650
Unit
V
V
DSS
H4L045
065SC1
AYWWZZ
Gate−to−Source Voltage
V
GS
−8/+22
−5/+18
V
Recommended Operation Values
of Gate−to−Source Voltage
V
GSop
V
T
< 175°C
= 25°C
C
Continuous Drain
I
D
55
187
39
A
W
A
Current (Note 1)
Steady
State
T
C
H4L045065SC1 = Specific Device Code
Power Dissipation
(Note 1)
P
D
A
Y
= Assembly Location
= Year
WW = Work Week
Continuous Drain
I
D
Current (Note 1)
Steady
State
ZZ
= Lot Traceability
T
C
= 100°C
Power Dissipation
(Note 1)
P
D
94
W
A
ORDERING INFORMATION
Pulsed Drain Current
(Note 2)
I
197
DM
T
C
= 25°C
Device
Package
Shipping
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
NTH4L045N065SC1 TO−247−4LD 30 Units /
J
stg
Tube
Source Current (Body Diode)
I
45
72
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 12 A, L = 1 mH) (Note 3)
L(pk)
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 72 mJ is based on starting T = 25°C; L = 1 mH, I = 12 A,
J
AS
V
DD
= 50 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
January, 2023 − Rev. 3
NTH4L045N065SC1/D
NTH4L045N065SC1
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.8
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
ꢁ
JC
R
ꢁ
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 20 mA, referenced to 25°C
D
−
0.15
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
10
1
ꢂ A
mA
nA
DSS
GS
DS
J
= 650 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
V
= +22/−8 V, V = 0 V
250
GSS
GS
DS
V
R
= V , I = 8 mA
1.8
−5
−
2.8
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 25 A, T = 25°C
45
33
41
16
mꢀ
DS(on)
D
J
= 18 V, I = 25 A, T = 25°C
−
50
−
D
J
= 18 V, I = 25 A, T = 175°C
−
D
J
Forward Transconductance
g
= 10 V, I = 25 A
−
−
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz,V = 325 V
−
−
−
−
−
−
−
1870
162
14
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/18 V, V = 520 V,
105
27
G(TOT)
GS
DS
I
= 25 A
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
Q
GS
30
GD
R
f = 1 MHz
3.1
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
D
= −5/18 V, V = 400 V,
−
−
−
−
−
−
−
13
14
26
7
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 25 A, R = 2.2 ꢀ
G
t
r
inductive load
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
47
33
80
ꢂ
J
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
V
= −5 V, T = 25°C
−
−
−
−
−
45
197
−
A
V
SD
GS
J
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
= −5 V, I = 25 A, T = 25°C
4.4
SD
GS
SD
J
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2
NTH4L045N065SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/18 V, I = 25 A,
−
−
−
−
−
−
20
108
4.5
11
−
−
−
−
−
−
ns
nC
ꢂ J
A
RR
GS
S
SD
dI /dt = 1000 A/ꢂ s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
RRM
Ta
11
ns
ns
Discharge Time
Tb
8.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTH4L045N065SC1
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
4
V
= 18 V
GS
15 V
3
V
GS
= 12 V
12 V
2
15 V
18 V
10 V
1
9 V
8 V
0
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.4
1.3
1.2
1.1
1
140
120
100
80
I
D
= 25 A
I
V
= 25 A
D
= 18 V
GS
T = 25°C
J
T = 150°C
J
60
40
0.9
0.8
20
0
7
8
9
10 11 12 13 14 15 16 17 18
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
120
100
80
60
40
20
0
V
GS
= −5 V
V
DS
= 10 V
T = 175°C
J
T = 25°C
J
T = 25°C
J
10
T = 175°C
J
T = −55°C
J
T = −55°C
J
1
2
3
4
5
6
7
8
3
6
9
12
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTH4L045N065SC1
TYPICAL CHARACTERISTICS (CONTINUED)
20
15
10
5
10000
I
D
= 25 A
V
= 390 V
DD
C
iss
1000
V
DD
= 520 V
C
oss
V
= 650 V
DD
100
10
1
C
rss
0
f = 1 MHz
= 0 V
V
GS
−5
0
20
40
60
80
100
120
0.1
1
10
100
650
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
10
1
60
50
40
30
20
10
0
V
= 18 V
GS
T = 25°C
J
R
= 0.8°C/W
ꢁ
JC
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
20000
10000
Single Pulse
10 ꢂ s
R
= 0.8°C/W
ꢁ
JC
T
C
= 25°C
100 ꢂ s
10
1
1 ms
1000
100
10 ms
Single Pulse
T = 175°C
J
DC
R
= 0.8°C/W
ꢁ
JC
T
C
= 25°C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTH4L045N065SC1
TYPICAL CHARACTERISTICS (CONTINUED)
1
0.1
0.5 Duty Cycle
0.2
0.1
0.05
0.02
0.01
Notes:
= 0.8°C/W
Duty Cycle, D = t /t
P
DM
0.01
0.001
R
ꢁ
Single Pulse
JC
1
2
t
1
t
2
0.00001
0.0001
0.001
t, RECTANGULAR PULSE DURATION (sec)
0.01
0.1
Figure 13. Junction−to−Case Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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