NTHL022N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L;
| 型号： | NTHL022N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L |
| 文件： | 总8页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
22 mohm, 1200ꢀV, M3S,
TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
30 mꢀ @ 18 V
89 A
N−CHANNEL MOSFET
D
NTHL022N120M3S
Features
• Typ. R
= 22 mꢀ @ V = 18 V
GS
DS(on)
G
• Ultra Low Gate Charge (Q
= 137 nC)
G(tot)
• Low Effective Output Capacitance (C = 146 pF)
oss
• 100% Avalanche Tested
S
• This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
TO−247−3L
CASE 340CX
• SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
MARKING DIAGRAM
V
DSS
Gate−to−Source Voltage
V
−10/+22
−3/+18
V
GS
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
Steady
State
T
C
Continuous Drain
Current (Notes 1, 3)
I
89
348
62
A
W
A
D
HL022N
120M3S
AYWWZZ
Power Dissipation
(Note 1)
P
I
D
Steady
State
T
C
= 100°C
Continuous Drain
Current (Notes 1, 3)
D
Power Dissipation
(Note 1)
P
174
275
W
A
D
HL022N120M3S = Specific Device Code
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
DM
A
Y
= Assembly Location
= Year
WW = Work Week
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
A
J
stg
+175
ZZ
= Lot Traceability
Source Current (Body Diode)
I
S
72
T
C
= 25°C V = −3 V (Note 1)
GS
Single Pulse Drain−to−Source Avalanche
Energy (I = 23.1 A, L = 1 mH) (Note 4)
E
267
270
mJ
°C
ORDERING INFORMATION
AS
L(pk)
Device
Package
Shipping
Maximum Lead Temperature for Soldering
(1/25″ from case for 10 s)
T
L
NTHL022N120M3S
TO−247−3L
30 Units /
Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. The maximium current rating is based on typical R
performance.
AS
DS(on)
4. E of 267 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,
AS
DD
J
V
= 100 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
May, 2023− Rev. 3
NTHL022N120M3S/D
NTHL022N120M3S
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.43
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
R
°C/W
ꢁ
JC
JA
ꢁ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.3
V/°C
(BR)DSS
J
(Note 6)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−
−
−
−
100
1
ꢂ A
ꢂ A
DSS
GS
J
V
= 1200 V
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS
Gate Threshold Voltage
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 20 mA
2.04
−3
−
2.72
−
4.4
+18
30
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 18 V, I = 40 A, T = 25°C
22
44
mꢀ
DS(on)
GS
D
J
V
= 18 V, I = 40 A, T = 175°C
−
−
GS
D
J
(Note 6)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 40 A (Note 6)
−
34
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
−
−
−
−
−
−
−
−
3175
146
14
−
−
−
−
−
−
−
−
pF
nC
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
137
9.2
15
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
V
= −3/18 V, V = 800 V,
DS
GS
I
= 40 A
D
Q
GS
GD
Q
34
R
f = 1 MHz
1.5
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
−
−
−
−
−
−
−
19
50
−
−
−
−
−
−
−
ns
d(ON)
Rise Time
t
r
V
= −3/18 V,
GS
Turn−Off Delay Time
t
44
d(OFF)
V
= 800 V,
= 40 A,
= 4.5 ꢀ
DS
Fall Time
t
f
14
I
D
R
G
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
1212
307
1519
ꢂ
J
Inductive Load (Notes 5, 6)
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
−
−
−
−
−
72
275
−
A
V
SD
Current (Note 1)
V
= −3 V, T = 25°C
GS
C
(Note 6)
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 40 A, T = 25°C
4.5
SD
SD
J
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2
NTHL022N120M3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Symbol
Test Condition
Min
Typ
Max
Unit
t
−
−
−
−
−
−
24
150
14
−
−
−
−
−
−
ns
nC
ꢂ J
A
RR
Q
RR
V
S
= −3/18 V, I = 40 A,
E
REC
GS
SD
dI /dt = 1000 A/ꢂ s, V = 800 V
DS
I
12
(Note 6)
RRM
t
A
t
B
14
ns
ns
Discharge time
11
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode.
ON OFF
6. Defined by design, not subject to production test.
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3
NTHL022N120M3S
TYPICAL CHARACTERISTICS
2.0
200
150
100
50
12 V
V
GS
= 20 V to 15 V
1.5
12 V
1.0
0.5
V
GS
= 20 V to 15 V
T
C
= 25°C
T
C
= 25°C
0
0
0
1
2
3
4
5
6
7
8
9
10
0
40
80
I , DRAIN CURRENT (A)
120
160
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
250
200
2.5
I
V
= 40 A
I
D
= 40 A
D
= 18 V
GS
2.0
150
100
50
1.5
1.0
0.5
0
T = 150°C
J
T = 25°C
J
0
−55 −30 −5
20
45
70
95 120 145 170
5
9
13
17
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
1600
1400
1200
1000
800
100
80
E
tot
V
DS
= 10 V
R
= 4.5 ꢀ
= 800 V
= 18/−3 V
G
V
DD
V
GS
E
on
60
40
600
T = 25°C
J
400
T = 175°C
J
E
off
20
0
200
0
T = −55°C
J
5
10
15
20
25
30
35
40
45
3
6
9
12
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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4
NTHL022N120M3S
TYPICAL CHARACTERISTICS
1800
1500
1200
900
900
E
E
tot
tot
I
V
V
= 20 A
D
800
700
600
500
400
300
200
= 800 V
= 18/−3 V
DD
GS
E
on
E
on
R
V
V
= 4.5 ꢀ
= 800 V
= 18/−3 V
G
DD
GS
600
E
off
E
off
300
0
100
0
500
600
700
800
900
1000
0
2
4
6
8
10
V
DD
(V)
R , GATE RESISTANCE (ꢀ)
G
Figure 7. Switching Loss vs. Drain Voltage
Figure 8. Switching Loss vs. Gate Resistance
800
700
300
100
E
V
GS
= −3 V
tot
E
on
600
500
400
300
200
T = 25°C
J
I
V
R
V
= 20 A
D
= 800 V
= 4.5 ꢀ
= 18/−3 V
DD
T = 175°C
J
G
10
1
T = −55°C
J
GS
E
off
100
0
25
50
75
100
125
150
175
1
3
5
7
9
TEMPERATURE (°C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Diode Forward Voltage vs. Current
10000
1000
100
18
15
12
9
I
D
= 40 A
C
iss
V
= 800 V
DD
V
DD
= 400 V
C
oss
V
= 600 V
DD
6
C
rss
3
10
1
0
f = 1 MHz
= 0 V
V
GS
−3
0
30
60
90
120
150
0.1
1
10
100
800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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5
NTHL022N120M3S
TYPICAL CHARACTERISTICS
100
100
80
60
40
20
V
GS
= 18 V
T = 25°C
J
T = 150°C
J
10
1
R
= 0.43°C/W
ꢁ
JC
0
0.001
0.01
0.1
1
25
50
75
100
125
150
175
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
100000
10000
1000
Single Pulse
R
= 0.43°C/W
ꢁ
JC
T
C
= 25°C
100
10
1
10 ꢂ s
100 ꢂ s
1000
100
1 ms
10 ms
Single Pulse
T = Max Rated
J
R
= 0.43°C/W
ꢁ
JC
T
C
= 25°C
100 ms/DC
0.1
0.1
1
10
100
1000 2000
0.00001 0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
1
0.5 Duty Cycle
0.2
0.1
0.1
0.05
0.02
0.01
Notes:
P
DM
0.01
Z
ꢁ
(t) = r(t) x R
ꢁ
JC
JC
R
= 0.43°C/W
Single Pulse
ꢁ
JC
t
Peak T = P
x Z (t) + T
ꢁ
JC C
1
J
DM
t
Duty Cycle, D = t /t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 17. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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