NTHL030N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L;
| 型号： | NTHL030N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L |
| 文件： | 总8页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
29 mohm, 1200ꢀV, M3S,
TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
39 mW @ 18 V
73 A
N−CHANNEL MOSFET
D
NTHL030N120M3S
Features
Typ. R
Ultra Low Gate Charge (Q
= 29 mW @ V = 18 V
GS
DS(on)
G
= 107 nC)
G(tot)
High Speed Switching with Low Capacitance (C = 106 pF)
oss
100% Avalanche Tested
S
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
Solar Inverters
Electric Vehicle Charging Stations
UPS (Uninterruptible Power Supplies)
Energy Storage Systems
TO−247−3LD
SMPS (Switch Mode Power Supplies)
CASE 340CX
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
−10/+22
−3/+18
V
V
V
V
GS
Recommended Operation Values T <175C
of Gate−to−Source Voltage
V
GSop
C
HL030N
120M3S
AYWWZZ
Continuous Drain
Current (Notes 1, 3)
Steady
State
T =25C
C
I
D
73
313
52
A
W
A
Power Dissipation
(Note 1)
P
D
Continuous Drain
Current (Notes 1, 3)
Steady T =100C
State
I
D
C
Power Dissipation
(Note 1)
P
156
193
W
A
D
HL030N120M3S = Specific Device Code
A
Y
= Assembly Location
= Year
Pulsed Drain Current
(Note 2)
T
C
= 25C
I
DM
WW = Work Week
ZZ
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
C
A
J
stg
+175
Source Current (Body Diode)
I
S
62
ORDERING INFORMATION
T
C
= 25C, V = −3 V
GS
Single Pulse Drain−to−Source Avalanche
E
220
270
mJ
C
AS
Device
Package
Shipping
Energy (Note 4)
NTHL030N120M3S
TO−247−3L
30 Units /
Tube
Maximum Lead Temperature for Soldering
(1/25 from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. The maximum current rating is based on typical R
performance.
AS
DS(on)
4. EAS of 220 mJ is based on starting T = 25C; L = 1 mH, I = 21 A,
J
V
= 100 V, V = 18 V.
DD
GS
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
April, 2023 − Rev. 0
NTHL030N120M3S/D
NTHL030N120M3S
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.48
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
C/W
q
JC
R
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25C
D
−
0.3
V/C
(BR)DSS
J
(Note 6)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25C
−
−
−
−
100
mA
mA
DSS
GS
J
V
= 1200 V
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
GS
= +22/−10 V, V = 0 V
1
GSS
DS
V
R
V
= V , I = 15 mA
2.04
−3
−
2.4
−
4.4
+18
39
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
V
GOP
Drain−to−Source On Resistance
V
= 18 V, I = 30 A, T = 25C
29
58
mW
DS(on)
GS
D
J
V
= 18 V, I = 30 A, T = 175C
−
−
GS
D
J
(Note 6)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 30 A (Note 6)
−
30
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
2430
106
9.4
107
6
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
RSS
C
Q
V
= −3/18 V, V = 800 V,
nC
G(TOT)
GS
DS
I
= 30 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
17
GS
GD
Q
28
R
f = 1 MHz
3.3
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= −3/18 V, V = 800 V,
−
−
−
−
−
−
−
17
39
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 30 A, R = 4.7 W
D
G
t
r
Inductive load (Notes 5, 6)
Turn−Off Delay Time
Fall Time
t
46
d(OFF)
t
f
14
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
751
198
949
mJ
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25C (Note 6)
−
−
−
−
−
62
193
−
A
V
SD
GS
C
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 30 A, T = 25C
4.6
SD
SD
J
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2
NTHL030N120M3S
Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
t
V
S
= −3/18 V, I = 30 A,
−
−
−
−
−
−
19
100
6.9
11
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
(Note 6)
E
REC
RRM
I
T
11
ns
ns
A
Discharge Time
T
7.8
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode.
ON OFF
6. Defined by design, not subject to production test.
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3
NTHL030N120M3S
TYPICAL CHARACTERISTICS
200
160
120
80
2.0
12 V
V
GS
= 20 V to 15 V
V
GS
= 15 V to 20 V
1.5
12 V
1.0
0.5
40
0
0
2
4
6
8
10
0
20
40
I , DRAIN CURRENT (A)
60
80
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
1.5
1.0
400
350
300
250
I
D
= 30 A
I
V
= 30 A
D
= 18 V
GS
200
150
100
T = 150C
J
0.5
0
50
0
T = 25C
J
−75 −50 −25
0
25 50 75 100 125 150 175 200
4
8
12
16
20
T , JUNCTION TEMPERATURE (C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
1000
800
600
400
200
0
100
80
R
= 4.7 W
= 800 V
= 18/−3 V
= 25C
G
V
DS
= 10 V
V
DD
V
GS
Etot
T
C
Eon
60
T = 175C
J
40
T = 25C
J
Eoff
20
0
T = −55C
J
0
3
6
9
12
15
18
10
15
20
I , DRAIN CURRENT (A)
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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4
NTHL030N120M3S
TYPICAL CHARACTERISTICS
1000
800
600
400
200
0
600
R
= 4.7 W
= 30 A
= 18/−3 V
= 25C
G
V
= 800 V
= 15 A
= 18/−3 V
= 25C
DD
I
D
I
D
Etot
Eon
V
GS
500
400
300
200
100
0
V
GS
Etot
Eon
T
C
T
C
Eoff
Eoff
600
650
700
750
800
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R , GATE RESISTANCE (W)
G
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Gate Resistance
Voltage
600
500
400
300
200
100
0
300
100
R
= 4.7 W
= 15 A
= 800 V
= 18/−3 V
G
V
GS
= −3 V
I
D
V
DD
V
GS
Etot
Eon
T = 175C
J
10
1
T = 25C
J
Eoff
T = −55C
J
25
50
75
100
125
150
175
0
2
4
6
8
10
TEMPERATURE (C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Reverse Drain Current vs. Body
Diode Forward Voltage
18
15
12
10K
1K
V
DD
= 400 V
I
D
= 30 A
C
ISS
V
DD
= 800 V
C
C
OSS
RSS
9
6
V
= 600 V
DD
100
3
10
1
f = 1 MHz
= 0 V
0
V
GS
−3
0
10 20 30 40 50 60 70 80 90 100 110 120
Q , GATE CHARGE (nC)
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
V
G
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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5
NTHL030N120M3S
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
100
25C
V
GS
= 18 V
150C
10
R
= 0.48C/W
10
0
q
JC
1
0.0001
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
T , AVALANCHE TIME (ms)
AV
T , CASE TEMPERATURE (C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
20K
10K
1000
100
10
R
= 0.48C/W
q
JC
R
= 0.48C/W
q
JC
T = Max Rated
J
Single Pulse
Single Pulse
T
C
= 25C
T
C
= 25C
10 ms
100 ms
1 ms
1K
1
10 ms
R
Limit
DS(on)
0.1
100 ms/DC
Thermal Limit
Package Limit
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
t, PULSE WIDTH (sec)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
2
1
50% Duty Cycle
20%
10%
0.1
5%
2%
1%
P
DM
Notes:
= 0.48C/W
0.01
Single Pulse
0.00001
R
q
JC
Peak T = P
x Z (t) + T
q
JC C
t
1
J
DM
Duty Cycle, D = t / t
1
2
t
2
0.001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION
Figure 17. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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