NTLJD3181PZTAG [ONSEMI]
Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package; 功率MOSFET -20 V, -4.0 A, ?酷?双P沟道,防静电, 2×2 mm的WDFN封装型号: | NTLJD3181PZTAG |
厂家: | ONSEMI |
描述: | Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package |
文件: | 总7页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTLJD3181PZ
Power MOSFET
−20 V, −4.0 A, mCoolt Dual P−Channel,
ESD, 2x2 mm WDFN Package
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
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Thermal Conduction
• Lowest R
Solution in 2x2 mm Package
V
R
MAX
I
D
MAX (Note 1)
−4.0 A
DS(on)
(BR)DSS
DS(on)
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
100 mW @ −4.5 V
144 mW @ −2.5 V
200 mW @ −1.8 V
−20 V
• This is a Pb−Free Device
D1
D2
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li−Ion Battery Charging and Protection Circuits
• High Side Load Switch
G1
G2
S1
S2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
P−CHANNEL MOSFET
P−CHANNEL MOSFET
Parameter
Drain−to−Source Voltage
Symbol
Value
−20
8.0
Unit
V
V
DSS
MARKING
DIAGRAM
D2
D1
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current (Note 1)
I
A
T = 25°C
−3.2
−2.3
−4.0
1.5
1
2
3
6
5
4
D
A
WDFN6
CASE 506AN
Steady
State
JEMG
T = 85°C
A
G
Pin 1
t ≤ 5 s
T = 25°C
A
JE = Specific Device Code
Power Dissipation
(Note 1)
P
W
Steady
State
M
G
= Date Code
= Pb−Free Package
D
T = 25°C
A
(Note: Microdot may be in either location)
t ≤ 5 s
2.3
Continuous Drain
Current (Note 2)
I
A
T = 25°C
−2.2
−1.6
0.71
D
A
PIN CONNECTIONS
T = 85°C
A
Steady
State
D1
Power Dissipation
(Note 2)
P
W
D
T = 25°C
A
S1
G1
D2
D1
1
2
3
6
5
4
Pulsed Drain Current
t = 10 ms
I
−16
A
p
DM
G2
S2
Operating Junction and Storage Temperature T , T
−55 to
150
°C
J
STG
D2
Source Current (Body Diode) (Note 2)
I
−1.0
A
S
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
(Top View)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
NTLJD3181PZTAG
WDFN6 3000/Tape & Reel
(Pb−Free)
2. Surface Mounted on FR4 Board using the minimum recommended pad size
2
NTLJD3181PZTBG
WDFN6 3000/Tape & Reel
(Pb−Free)
of 30 mm , 2 oz Cu.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
December, 2008 − Rev. 0
NTLJD3181PZ/D
NTLJD3181PZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
SINGLE OPERATION (SELF−HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
83
177
54
q
JA
R
q
°C/W
JA
R
q
JA
DUAL OPERATION (EQUALLY HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
58
133
40
q
JA
R
q
°C/W
JA
R
q
JA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu).
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2
NTLJD3181PZ
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−20
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = −250 mA, Ref to 25°C
D
13
mV/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
−10
10
mA
mA
DSS
J
V
DS
= −16 V, V = 0 V
GS
T = 85°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
DS
= 0 V, V
= 8.0 V
GSS
GS
V
V
GS
= V , I = −250 mA
−0.4
−1.0
V
GS(TH)
DS
D
Gate Threshold Temperature Coeffi-
cient
V
/T
2.0
mV/°C
GS(TH)
J
Drain−to−Source On−Resistance
R
V
GS
V
GS
V
GS
V
DS
= −4.5 V, I = −2.0 A
68
90
100
144
200
mW
DS(on)
D
= −2.5 V, I = −2.0 A
D
= −1.8 V, I = −1.7 A
125
6.5
D
Forward Transconductance
g
FS
= −5.0 V, I = −2.0 A
S
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
450
90
pF
ISS
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
OSS
C
RSS
V
= −10 V
Reverse Transfer Capacitance
Total Gate Charge
62
Q
5.2
0.3
0.84
1.5
7.8
nC
ns
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
= −4.5 V, V = −10 V,
DS
GS
I
D
= −3.8 A
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
6.6
9.0
d(ON)
t
r
V
= −4.5 V, V = −5.0 V,
DD
GS
I
D
= −2.0 A, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
14
d(OFF)
t
f
12.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
T = 25°C
−0.73
−0.62
23
−1.0
SD
RR
J
V
GS
= 0 V, IS = −1.0 A
V
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
13
ns
a
V
GS
= 0 V, d /d = 100 A/ms,
ISD t
I = −1.0 A
S
Discharge Time
t
10
b
Reverse Recovery Time
Q
10
nC
RR
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTLJD3181PZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
8
8
6
4
−2.2 V
= −2.5 V to −5 V
T = 25°C
J
V
DS
≥ 5 V
V
GS
−2.0 V
−1.8 V
6
4
−1.6 V
−1.4 V
T = 25°C
J
2
0
2
0
−1.2 V
−1.0 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.1
0.32
0.28
0.24
0.20
0.16
0.12
V
GS
= −4.5 V
T = 25°C
J
T = 125°C
J
V
GS
= −1.8 V
0.08
0.06
T = 25°C
J
V
GS
= −2.5 V
0.08
0.04
0
T = −55°C
J
0.04
0.02
V
GS
= −4.5 V
2.0
4.0
6.0
8.0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
10000
1000
1.75
1.5
V
GS
= 0 V
I
V
= −2 A
D
= −4.5 V
GS
1.25
T = 150°C
J
1.0
0.75
0.5
T = 125°C
J
100
−50
−25
0
25
50
75
100 125
150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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4
NTLJD3181PZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
600
400
5
T = 25°C
J
QT
V
GS
= 0 V
4
3
2
C
iss
V
GS
Q
Q
GS
GD
200
0
1
0
C
oss
I
= −3.8 A
D
T = 25°C
J
C
rss
0
5
10
15
20
0
1
2
3
4
5
6
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
2
1000
100
V
I
= −5.0 V
= −2.0 A
= −4.5 V
V
GS
= 0 V
DD
T = 25°C
J
D
V
GS
1.5
1
t
d(off)
t
f
t
r
10
1
t
d(on)
0.5
0
1
10
100
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (OHMS)
G
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
100 ms
1 ms
10 ms
1
V
GS
= 20 V
SINGLE PULSE
= 25°C
T
C
0.1
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
NTLJD3181PZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
10
P
(pk)
0.05
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
1
t
1
T
− T = P
R (t)
q
JA
J(pk)
A
(pk)
t
2
SINGLE PULSE
0.00001 0.0001
DUTY CYCLE, D = t /t
1
2
0.1
0.000001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
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6
NTLJD3181PZ
PACKAGE DIMENSIONS
WDFN6, 2x2
CASE 506AN−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
EXPOSED Cu
MOLD CMPD
PLATING
DETAIL B
PIN ONE
REFERENCE
OPTIONAL
MILLIMETERS
E
CONSTRUCTIONS
DIM
A
MIN
0.70
0.00
MAX
0.80
0.05
A1
A3
b
0.10
C
0.20 REF
0.25
0.35
L
L
D
2.00 BSC
0.10
C
D2
E
0.57
2.00 BSC
0.67
1.10
TOP VIEW
L1
E2
e
0.90
0.65 BSC
0.15 BSC
0.25 REF
DETAIL A
A3
DETAIL B
F
0.10
0.08
C
C
OPTIONAL
K
CONSTRUCTIONS
L
0.20
---
0.30
0.10
A
L1
NOTE 4
A1
SEATING
PLANE
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
C
SIDE VIEW
1.74
0.10
D2
C
A
B
2X
0.77
D2
F
L
1
3
1.10
6X
0.47
DETAIL A
2.30
E2
0.10
C
A
B
PACKAGE
OUTLINE
6
4
K
6X b
1
0.10
0.05
C
C
A
B
e
0.65
PITCH
NOTE 3
6X
0.35
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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NTLJD3181PZ/D
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