NTMFD1D4N02P1E [ONSEMI]
MOSFET, Power, 25V Dual N-Channel Power Clip;
| 型号： | NTMFD1D4N02P1E |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power, 25V Dual N-Channel Power Clip |
| 文件： | 总11页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, Dual,
N-Channel, Power Trench,
Power Clip, Asymmetric
25 V
NTMFD1D4N02P1E
Features
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• Small Footprint (5x6mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
FET
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
G
3.3 mW @ 10 V
4.2 mW @ 4.5 V
1.1 mW @ 10 V
1.33 mW @ 4.5 V
Q1
25 V
74 A
• These are Pb−free, Halogen Free / BFR Free and are RoHS
Compliant
Q2
25 V
155 A
Typical Applications
• DC−DC Converters
• System Voltage Rails
PIN1
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Sym-
bol
Parameter
Drain−to−Source Voltage
Q1
Q2
Unit
V
V
DSS
25
25
PQFN8
POWER CLIP
CASE 483AR
Gate−to−Source Voltage
V
GS
+16V +16V
−12V −12V
V
Continuous Drain Cur- Steady
T
T
= 25°C
= 85°C
I
74
53
25
155
112
41
A
C
D
rent R
(Note 3)
State
q
JC
MARKING DIAGRAM
C
Power Dissipation
(Note 3)
T = 25°C
A
P
W
A
D
D
D
2EKN
AYWWZZ
R
q
JC
Continuous Drain Cur- Steady
rent R (Notes 1, 3) State
T = 25°C
A
I
D
20
14
36
26
q
JA
T = 85°C
A
2EKN = Specific Device Code
A
Y
= Assembly Location
= Year
Power Dissipation
(Notes 1, 3)
T = 25°C
A
P
2.1
2.3
W
A
R
q
JA
WW
ZZ
= Work Week
= Assembly Lot Code
Continuous Drain Cur- Steady
rent R (Notes 2, 3) State
T = 25°C
A
I
D
13
10
24
17
q
JA
T = 85°C
A
ELECTRICAL CONNECTION
Power Dissipation
(Notes 2, 3)
T = 25°C
A
P
0.96
1.0
W
R
q
JA
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
325
134
552
604
A
A
p
Single Pulse Drain−to−Source Avalanche
Energy Q1: I = 9.4 A , L = 3 mH (Note 4)
E
AS
mJ
L
pk
Energy Q2: I = 20.1 A , L = 3 mH (Note 4)
L
pk
Operating Junction and Storage Temperature
Range
T ,
stg
−55 to 150
°C
°C
J
T
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
T
L
260
ORDERING INFORMATION
†
Device
NTMFD1D4N02P1E
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PQFN8
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2020 − Rev. 1
NTMFD1D4N02P1E/D
NTMFD1D4N02P1E
Table 1. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Q1 Max
4.4
Q2 Max
2.9
Units
Junction−to−Case – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 2, 3)
R
q
JC
R
q
JA
R
q
JA
°C/W
60
55
130
120
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular
conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. R
is determined
q
CA
by the user’s board design.
4. Q1 100% UIS tested at L = 0.1 mH, I = 16.5 A.
AS
Q2 100% UIS tested at L = 0.1 mH, I = 36 A.
AS
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
V
I
= 0 V, I = 250 mA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
25
25
V
V
(BR)DSS
GS
D
V
= 0 V, I = 1 mA
D
(BR)DSS
GS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
16
19
mV/°C
= 250 mA, ref to 25°C
= 1 mA, ref to 25°C
(BR)DSS
D
T
J
I
D
Zero Gate Voltage Drain Current
I
V
= 0 V, V = 20 V T = 25°C
10
mA
DSS
GS
DS
J
10
Gate−to−Source Leakage Current
I
V
V
= 0 V, V = +16 V / −12 V
100
100
nA
GSS
DS
GS
= 0 V, V = +16 V / −12 V
DS
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
1.2
1.2
1.54
1.55
−4.3
−4.4
2.6
2.0
2.0
V
V
V
I
= V , I = 250 mA
GS(TH)
GS
DS
D
= V , I = 800 mA
GS
DS
D
Threshold Temperature Coefficient
V
R
mV/°C
mW
= 250 mA, ref to 25°C
= 800 mA, ref to 25°C
GS(TH)
D
/ T
J
I
D
Drain−to−Source On Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
V
DS
= 10 V, I = 20 A
3.3
4.2
DS(on)
D
= 4.5 V, I = 18 A
3.4
D
= 10 V, I = 37 A
Q2
0.81
1.04
125
285
0.44
0.6
1.1
D
= 4.5 V, I = 33 A
1.33
D
Forward Transconductance
Gate Resistance
g
FS
= 5 V, I = 20 A
Q1
Q2
Q1
Q2
D
= 5 V, I = 37 A
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
Q1
Q2
Q1
Q2
Q1
Q2
1180
3603
320
940
22
pF
pF
pF
ISS
Output Capacitance
Reverse Capacitance
C
OSS
RSS
V
GS
= 0 V, V = 13 V, f = 1 MHz
DS
C
64
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTMFD1D4N02P1E
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
CHARGES & CAPACITANCES
Total Gate Charge
Symbol
Test Condition
FET
Min
Typ
Max
Unit
nC
Q
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7.2
21.5
1.35
3.9
G(TOT)
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
Q
nC
GD
Q1: V = 4.5V, V = 13V, I = 20A
GS
DS
D
Q2: V = 4.5V, V = 13V, I = 37A
GS
DS
D
3.15
9.1
nC
GS
Q
V
V
= 10 V, V = 13 V, I = 20 A
16.4
48.6
nC
G(TOT)
GS
DS
D
= 10 V, V = 13 V, I = 37 A
GS
DS
D
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11.6
21.4
2.7
ns
ns
ns
ns
d(ON)
Rise Time
t
r(ON)
V
= 4.5 V
GS
8.7
Q1: I = 20 A, V = 13 V, R = 6W
Q2: I = 37 A, V = 13 V, R = 6W
D
DD
G
Turn−Off Delay Time
Fall Time
t
15.6
30.7
3.2
d(OFF)
D
DD
G
t
f
8.5
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7.9
10.2
1.1
ns
ns
ns
ns
d(ON)
Rise Time
t
r(ON)
V
= 10 V
GS
3.3
Q1: I = 20 A, V = 13 V, R = 6W
Q2: I = 37 A, V = 13 V, R = 6W
D
DD
G
Turn−Off Delay Time
Fall Time
t
21.3
48.9
2.2
d(OFF)
D
DD
G
t
f
7.4
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
V
= 0 V, I = 20 A
T = 25°C
Q1
Q2
0.8
0.7
1.2
1.2
V
GS
S
J
T = 125°C
J
= 0 V, I = 37 A
T = 25°C
J
0.8
GS
S
T = 125°C
0.65
21.4
36.5
8.3
J
Reverse Recovery Time
t
V
GS
= 0 V,
Q1
Q2
Q1
Q2
ns
RR
Q1: I = 20 A, dI/dt = 100 A/ms
Q2: I = 37 A, dI/dt = 300 A/ms
S
S
Reverse Recovery Charge
Q
nC
RR
21.9
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTMFD1D4N02P1E
TYPICAL CHARACTERISTICS FOR Q1
70
60
70
60
50
40
30
20
10
0
V
= 10 V
GS
to 3.6 V
V
V
= 3.2 V
GS
50
40
30
20
10
0
T = 125°C
J
T = −55°C
J
= 2.8 V
GS
T = 25°C
J
V
GS
= 2.6 V
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SPURCE VOLTAGE (V)
V
GS
, GATE−TO−SPURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
8
7
6
5
4
3
2
1
6.0
T = 25°C
D
T = 25°C
J
J
I
= 20 A
5.0
4.0
3.0
2.0
1.0
V
= 4.5 V
= 10 V
40
GS
V
GS
2
3
4
5
6
7
8
9
10
10
20
30
50
60
70
V
GS
, GATE−TO−SPURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1
100000
10000
1000
100
V
= 10 V
GS
T = 150°C
ID = 20 A
J
T = 125°C
J
T = 85°C
J
10
0.8
0.6
0.4
T = 25°C
J
1
0.1
5
7
9
11 13 15 17 19 21 23 25
−50 −25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SPURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current vs.
Temperature
Voltage
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4
NTMFD1D4N02P1E
TYPICAL CHARACTERISTICS FOR Q1 (continued)
10 000
1 000
100
10
10
9
8
7
6
5
4
3
2
1
0
V
= 13 V
DS
= 20 A
I
D
Ciss
T = 25°C
J
Coss
Q
GD
Q
GS
Crss
V
GS
= 0 V
T = 25°C
J
f = 1 MHz
1
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
V
DS
, DRAIN−TO−SPURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
1
100
10
1
V
GS
= 0 V
V
V
I
= 4.5 V
= 13 V
= 20 A
GS
DS
td(off)
td(on)
D
T = 125°C
J
tr
T = 25°C
J
tf
T = −55°C
J
0.1
0.3
1.0
10.0
R , GATE RESISTANCE (W)
100.0
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1
1000
100
10
1
10 ms
T
= 25°C
J(initial)
100 ms
R
LIMIT
DS(ON)
T
= 125°C
J(initial)
SINGLE PULSE
1 ms
10 ms
100 ms
R
T
= 3.0°C/W
= 25°C
q
JC
C
T
= 100°C
J(initial)
0.1
0.1
1
10
0.00001 0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN SOURCE VOLTAGE (V)
T
AV
, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased Safe
Operationg Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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5
NTMFD1D4N02P1E
TYPICAL CHARACTERISTICS FOR Q1 (continued)
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
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6
NTMFD1D4N02P1E
TYPICAL CHARACTERISTICS FOR Q2
80
70
80
70
60
50
40
30
20
10
0
V
= 10 V
GS
to 3.2 V
V
GS
= 2.8 V
60
50
40
30
20
10
0
T = 125°C
J
V
GS
= 2.6 V
T = −55°C
J
T = 25°C
J
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
1.80
1.60
1.40
1.20
1.00
0.80
0.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
T = 25°C
J
T = 25°C
D
J
I
= 37 A
V
= 4.5 V
= 10 V
GS
V
GS
10
20
30
40
50
60
70
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1
100000
V
= 10 V
GS
10000
1000
100
10
ID = 37 A
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.8
0.6
0.4
T = 25°C
J
1
0.1
5
7
9
11 13 15 17 19 21 23 25
−50 −25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current vs.
Temperature
Voltage
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7
NTMFD1D4N02P1E
TYPICAL CHARACTERISTICS FOR Q2 (continued)
10
10 000
1 000
V
DS
= 13 V
9
8
7
6
5
4
3
2
1
0
I
D
= 37 A
Ciss
T = 25°C
J
Coss
100
10
1
Q
Q
GD
GS
Crss
Ciss
Coss
Crss
V
GS
= 0 V
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
0
10
20
30
40
50
V
DS
, DRAIN−TO−SPURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source vs. Total Charge
1000
100
10
100
10
1
V
GS
= 0 V
V
V
= 4.5 V
= 13 V
= 37 A
GS
DS
I
D
td(off)
tr
T = 125°C
J
T = 25°C
J
T = 55°C
J
tf
td(on)
1
0.1
1.0
10.0
R , GATE RESISTANCE (W)
100.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 22. Resistive Switching Time Variation vs.
Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T
= 25°C
J(initial)
10
100 ms
R
LIMIT
DS(ON)
1 ms
T
= 125°C
SINGLE PULSE
= 3.0°C/W
J(initial)
R
q
JC
10 ms
T
C
= 25°C
T
= 100°C
J(initial)
100 ms
0.1
0.1
1
0.00001 0.0001 0.001
0.01
0.1
1
10
1
10
V
DS
, DRAIN SOURCE VOLTAGE (V)
T
AV
, TIME IN AVALANCHE (s)
Figure 24. Maximum Rated Forward Biased Safe
Operating Area
Figure 25. Maximum Drain Current vs. Time in
Avalanche
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NTMFD1D4N02P1E
TYPICAL CHARACTERISTICS FOR Q2 (continued)
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 26. Thermal Response
PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13666G
PQFN8 5x6, 1.27P
PAGE 1 OF 1
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