NTMFS0D6N03CT1G [ONSEMI]
MOSFET, Power, Single N-Channel, 30V, SO-8FL;型号: | NTMFS0D6N03CT1G |
厂家: | ONSEMI |
描述: | MOSFET, Power, Single N-Channel, 30V, SO-8FL |
文件: | 总7页 (文件大小:195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SO8-FL
30 V, 0.62 mW, 433 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
0.62 mW @ 10 V
0.9 mW @ 4.5 V
30 V
433 A
NTMFS0D6N03C
D (5−8)
Features
• Advanced Package (5x6mm) with Excellent Thermal Conduction
• Ultra Low R
to Improve System Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
DS(on)
G (4)
Compliant
S (1,2,3)
N−CHANNEL MOSFET
Applications
• ORing
• Motor Drive
• Power Load Switch
• Battery Management and Protection
MARKING
DIAGRAMS
D
S
S
S
D
D
DFN5 (SO−8FL)
CASE 506EZ
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
0D6N3C
AYWZZ
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
G
1
V
DSS
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Gate−to−Source Voltage
V
20
V
GS
Continuous Drain
Current R
T
T
= 25°C
=100°C
= 25°C
I
433
306
200
A
C
D
q
JC
Steady
(Note 2)
C
State
Power Dissipation
T
C
P
W
A
D
R
(Note 2)
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Continuous Drain
Current R
T = 25°C
A
I
60
42
D
q
JA
T = 100°C
A
Steady
State
(Notes 1, 2)
Power Dissipation
T = 25°C
A
P
3.9
W
D
R
(Notes 1, 2)
q
JA
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
900
156
A
A
A
p
Source Current (Body Diode)
I
S
Single Pulse Drain−to−Source Avalanche
Energy (I = 45.4 A
E
AS
1032
mJ
)
pk
L
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
STG
+175
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
October, 2021 − Rev. 4
NTMFS0D6N03C/D
NTMFS0D6N03C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.8
Unit
Junction−to−Case – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
R
q
JC
°C/W
°C/W
R
38
q
JA
R
134
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA. ref to 25°C
12
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
DSS
GS
DS
J
V
= 30 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 280 mA
1.3
2.2
V
mV/°C
mW
mW
S
GS(TH)
DS
D
V
/T
J
I = 280 mA. ref to 25°C
D
−5.7
0.52
0.72
150
0.4
GS(TH)
R
R
V
= 10 V, I = 30 A
0.62
0.9
DS(on)
DS(on)
GS
GS
D
V
= 4.5 V, I = 30 A
D
g
FS
V
= 3 V, I = 30 A
DS D
R
T = 25°C
A
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
10500
5740
161
65
ISS
Output Capacitance
C
V
GS
= 0 V, V = 15 V, f = 1 MHz
pF
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Q
16
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Gate−to−Drain Charge
Q
12
GD
GS
Gate−to−Source Charge
Total Gate Charge
Q
27
Q
V
= 10 V, V = 15 V; I = 30 A
145
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
24
12
89
19
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
V
I
= 30 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.60
97
1.2
SD
J
V
S
= 0 V,
GS
I
= 30 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
= 0 V, dIS/dt = 100 A/ms,
GS
V
= 15 V, I = 30 A
DS
S
Reverse Recovery Charge
Q
135
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS0D6N03C
TYPICAL CHARACTERISTICS
450
400
350
300
250
200
150
100
450
V
DS
= 3 V
3.4 V
400
350
3.2 V
V
= 10 V to 3.6 V
GS
300
250
200
150
100
3.0 V
2.8 V
2.6 V
2.4 V
T = 25°C
J
50
0
50
0
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T = 25°C
D
T = 25°C
J
J
I
= 30 A
V
V
= 4.5 V
= 10 V
GS
GS
0.2
0
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350 400
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.9
1000000
100000
10000
V
I
= 10 V
= 30 A
GS
T = 175°C
J
1.7
1.5
1.3
1.1
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1000
100
T = 25°C
J
0.9
0.7
0.5
10
1
−50 −25
0
25
50
75 100 125 150 175
5
10
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS0D6N03C
TYPICAL CHARACTERISTICS
100,000
10,000
10
9
C
ISS
8
7
6
5
4
3
2
C
OSS
1000
Q
Q
GD
GS
100
10
C
RSS
V
= 0 V
V
I
= 15 V
= 30 A
GS
DS
T = 25°C
J
D
1
0
f = 1 MHz
T = 25°C
J
0
5
10
15
20
25
30
0
30
60
90
120
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
1000
V
V
= 10 V
= 15 V
= 30 A
GS
V
GS
= 0 V
t
d(off)
DS
I
D
t
f
100
10
1
t
d(on)
t
r
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
0.3
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10 ms
100 ms
T
= 25°C
J(initial)
T
= 100°C
J(initial)
10
10
T
C
= 25°C
1 ms
Single Pulse
≤ 10 V
10 ms
V
GS
1
100 ms
1 s
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.00001 0.0001
0.1
1
10
100
0.001
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOUORCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS0D6N03C
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
DFN5
Shipping
NTMFS0D6N03CT1G
0D6N3C
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1
DATE 25 AUG 2021
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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