NTMFS0D9N03CGT1G [ONSEMI]
MOSFET，功率，30V，N 沟道，SO8FL;
| 型号： | NTMFS0D9N03CGT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET，功率，30V，N 沟道，SO8FL |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, SO8-FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
30 V
0.9 mW @ 10 V
298 A
30 V, 0.9 mW, 298 A
D (5−8)
NTMFS0D9N03CG
G (4)
Features
• Advanced Package (5x6 mm) with Excellent Thermal Conduction
S (1,2,3)
• Ultra Low R
to Improve System Efficiency
DS(on)
N−CHANNEL MOSFET
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Hot Swap Application
• Power Load Switch
• Battery Management and Protection
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
V
MARKING DIAGRAM
V
DSS
D
V
GS
20
V
S
S
S
G
D
D
0D9NG
AYWZZ
Continuous Drain
Current R
Steady
State
T
T
= 25°C
=100°C
= 25°C
I
D
298
211
144
A
C
q
JC
(Note 2)
C
D
Power Dissipation
T
C
P
D
W
A
R
(Note 2)
q
JC
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
48
34
q
JA
T = 100°C
A
(Notes 1, 2)
Power Dissipation
T = 25°C
P
3.8
W
A
A
D
R
(Notes 1, 2)
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
900
A
p
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
I
120
556
A
S
E
AS
mJ
Energy (I = 29.2 A
)
L
pk
Operating Junction and Storage
Temperature
T ,
STG
−55 to
°C
°C
J
T
+175
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
November, 2021 − Rev. 5
NTMFS0D9N03CG/D
NTMFS0D9N03CG
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.0
Unit
Junction−to−Case – Steady State
R
q
JC
°C/W
Junction−to−Ambient – Steady State (Note 3)
R
39
q
JA
2
3. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA. ref to 25°C
13
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
mA
DSS
GS
DS
J
V
= 30 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 200 mA
1.3
2.2
0.9
V
mV/°C
mW
S
GS(TH)
DS
D
V
/T
J
I
= 200 mA. ref to 25°C
−5
0.71
70
GS(TH)
D
R
V
GS
= 10 V
I = 20 A
D
DS(on)
g
FS
V
= 3 V, I = 20 A
DS D
R
T = 25°C
A
1.5
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
V
= 0 V, V = 15 V, f = 1 MHz
6615
3014
146
9450
4306
243
12285
5598
486
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 10 V, V = 15 V; I = 20 A
131.4
14.2
24.2
13.5
G(TOT)
DS
D
Threshold Gate Charge
Q
G(TH)
Gate−to−Source Charge
Gate−to−Drain Charge
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
V
= 10 V, V = 15 V,
20
16
93
24
ns
d(ON)
GS
D
DS
I
= 20 A, R = 3.0 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.75
0.60
83
1.2
V
SD
GS
J
I
= 10 A
T = 125°C
J
Reverse Recovery Time
t
V
= 0 V, dIS/dt = 100 A/ms,
ns
RR
GS
V
= 15 V, I = 20 A
DS
S
Reverse Recovery Charge
Q
114
nC
RR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS0D9N03CG
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
400
V
GS
= 10 V to 6 V
V
DS
= 3 V
5.5 V
5.0 V
350
300
250
200
150
100
4.5 V
T = 25°C
J
4.0 V
3.5 V
3.0 V
2.5 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0
3.0
2.5
2.0
1.5
1.0
T = 25°C
D
J
T = 25°C
J
I
= 20 A
V
= 10 V
GS
0.5
0
2
3
4
5
6
7
8
9
10
10
60
110
160
210
260
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.E−03
1.E−04
1.E−05
V
I
= 10 V
= 20 A
GS
T = 175°C
J
1.6
D
T = 150°C
J
1.4
1.2
1.0
0.8
T = 125°C
J
1.E−06
1.E−07
T = 85°C
J
T = 25°C
J
1.E−08
1.E−09
0.6
0.4
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS0D9N03CG
TYPICAL CHARACTERISTICS
10,000
10,000
10
9
C
8
7
6
5
4
3
2
ISS
C
OSS
1000
Q
Q
GD
GS
C
RSS
100
10
V
= 0 V
V
I
= 15 V
= 20 A
GS
DS
T = 25°C
J
D
1
0
f = 1 MHz
T = 25°C
J
0
5
10
15
20
25
30
0
20
40
60
80
100
120
140
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
8
1000
V
V
I
= 10 V
= 15 V
= 20 A
GS
V
GS
= 0 V
DS
t
d(off)
D
t
f
100
10
1
6
t
r
t
d(on)
4
2
T = 25°C
T = 125°C
J
J
T = −55°C
J
0
1
10
R , GATE RESISTANCE (W)
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, SOURCE−TO−DRAIN VOLTAGE (V)
1
V
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10 ms
100 ms
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1 ms
10
Curve is based on
10% de−rating from
typical failure points
10 ms
100 ms
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.00001
0.1
1
10
100
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS0D9N03CG
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
0.1
5%
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 13. Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
DFN5
Shipping
NTMFS0D9N03CGT1G
0D9NG
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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