NTMFS4C805NAT3G [ONSEMI]
Power Field-Effect Transistor;
| 型号： | NTMFS4C805NAT3G |
| 厂家： | 
ONSEMI |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, SO-8FL
30 V, 78 A
NTMFS4C805NA
Features
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
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• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
2.8 mW @ 10 V
4.0 mW @ 4.5 V
30 V
78 A
Applications
• CPU Power Delivery
• DC−DC Converters
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
V
DSS
30
G (4)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T = 25°C
I
21.7
16.3
2.57
A
A
D
S (1,2,3)
N−CHANNEL MOSFET
Current R
(Note 1)
q
JA
T = 80°C
A
Power Dissipation
(Note 1)
T = 25°C
A
P
W
A
D
R
q
JA
MARKING
DIAGRAMS
Continuous Drain
T = 25°C
A
I
D
34.8
26.0
6.6
Current R
(Note 1)
≤ 10 s
q
JA
T = 80°C
A
D
S
S
S
D
D
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
W
A
D
D
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4C024
AYWZZ
Steady
State
R
q
JA
Continuous Drain
Current R (Note 2)
T = 25°C
A
I
D
11.9
8.9
G
q
JA
T = 80°C
A
1
D
Power Dissipation
(Note 2)
T = 25°C
A
P
0.77
W
A
R
q
JA
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Continuous Drain
Current R (Note 1)
T
= 25°C
=80°C
= 25°C
I
D
78
58
33
C
q
JC
T
C
C
Power Dissipation
(Note 1)
T
P
W
R
q
JC
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
174
80
A
A
A
p
ORDERING INFORMATION
Current Limited by Package
T = 25°C
A
I
Dmax
†
Operating Junction and Storage Temperature
T ,
STG
−55 to
+150
°C
J
Device
Package
Shipping
T
NTMFS4C805NAT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Source Current (Body Diode)
Drain to Source dV/dt
I
30
7.0
84
A
S
dV/d
V/ns
mJ
t
NTMFS4C805NAT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
E
AS
Energy (T = 25°C, V = 20 V, I = 41 A ,
J
GS
L
pk
L = 0.1 mH, R = 25 W) (Note 3)
GS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T = 25°C,
J
V
GS
= 20 V, I = 29 A, E = 42 mJ.
L AS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019 − Rev. 1
NTMFS4C805NA/D
NTMFS4C805NA
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.8
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
R
48.6
161.7
19
q
JA
°C/W
R
q
JA
R
q
JA
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= 12.6 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
12
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
0.3
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
5.1
2.3
3.3
68
mV/°C
GS(TH)
R
V
GS
= 10 V
I
I
= 30 A
= 30 A
2.8
4.0
DS(on)
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
1.0
2.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1972
1215
59
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.030
14
RSS ISS
DS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
3.3
G(TH)
Q
6.0
V
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
GS
DS
D
Q
V
5.0
3.1
V
Q
V
= 10 V, V = 15 V; I = 30 A
30
nC
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
t
11
32
21
7.0
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
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2
NTMFS4C805NA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
8.0
26
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
26
d(OFF)
Fall Time
t
f
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.77
0.62
40.2
20.3
19.9
30.2
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C805NA
TYPICAL CHARACTERISTICS
140
130
120
110
100
90
140
10 V
T = 25°C
J
V
DS
= 5 V
130
120
110
100
90
3.8 V
3.6 V
4 V to 6.5 V
3.4 V
3.2 V
80
70
80
70
60
60
50
40
50
40
3.0 V
T = 125°C
J
30
20
10
0
30
20
10
0
T = 25°C
2.8 V
2.6 V
J
T = −55°C
J
0
1
2
3
4
5
0
0.5 1.0 1.5
2.0 2.5 3.0 3.5 4.0 4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.008
0.007
I
= 30 A
T = 25°C
D
J
T = 25°C
J
0.006
0.005
V
= 4.5 V
= 10 V
40
GS
0.004
0.003
0.002
V
GS
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
10000
1000
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
1.5
1.4
T = 125°C
J
1.3
1.2
1.1
1.0
0.9
0.8
0.7
100
10
T = 85°C
J
−50 −25
0
25
50
75
100
125 150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4C805NA
TYPICAL CHARACTERISTICS
3000
2750
2500
10
Q
V
= 0 V
T
GS
T = 25°C
J
8
6
4
2
0
2250
2000
1750
1500
1250
1000
750
C
C
iss
oss
Q
8
Q
gd
gs
T = 25°C
J
V
DD
V
GS
= 15 V
= 10 V
500
250
0
C
rss
I
D
= 30 A
0
5
10
15
20
25
30
0
4
12
16
20
24
28
32
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18
16
14
12
10
8
1000
100
V
GS
= 0 V
V
= 15 V
= 15 A
= 10 V
DD
I
D
t
V
GS
d(off)
t
d(on)
t
r
t
f
10
1
6
T = 125°C
J
4
T = 25°C
J
2
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
45
1000
100
I
D
= 29 A
40
35
30
25
10 ms
100 ms
1 ms
10
1
10 ms
20
15
10
0 V < V < 10 V
Single Pulse
GS
T
C
= 25°C
0.1
R
Limit
dc
DS(on)
Thermal Limit
Package Limit
5
0
25
0.01
0.01
0.1
1
10
100
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4C805NA
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
120
100
80
60
40
20
0
T = 25°C
A
T = 85°C
A
10
1
1.E−07
0
10
20
30
40
(A)
50
60
70
80
1.E−06
1.E−05
1.E−04
1.E−03
I
PULSE WIDTH (SECONDS)
D
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTMFS4C805NA
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
2X
5. DRAIN
0.495
4.560
8X b
A B
2X
1.530
0.10
0.05
C
c
e/2
e
L
2X
0.475
1
4
3.200
K
4.530
E2
1.330
PIN 5
(EXPOSED PAD)
2X
0.905
M
L1
1
0.965
D2
BOTTOM VIEW
G
4X
1.000
4X
1.270
PITCH
DIMENSIONS: MILLIMETERS
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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