NTMTSC4D3N15MC [ONSEMI]
Single N-Channel Power MOSFET 150V, 174A, 4.45mΩ;
| 型号： | NTMTSC4D3N15MC |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 150V, 174A, 4.45mΩ |
| 文件： | 总7页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power,
Single N-Channel,
TDFNW8 DUAL COOL)
150 V, 4.45 mW, 174 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
4.45 mW @ 10 V
5 mW @ 8 V
150 V
174 A
D (5, 6, 7, 8)
NTMTSC4D3N15MC
Features
G (1)
• Small Footprint (8x8 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
S (2, 3, 4)
N−CHANNEL MOSFET
• Low Q and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
Top
Bottom
TDFNW8 8.3x8.4, 2P
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
PQFN88
CASE 507AS
Symbol
Parameter
Drain−to−Source Voltage
Value
150
20
Unit
V
V
DSS
V
GS
Gate−to−Source Voltage
V
MARKING DIAGRAM
I
D
Continuous Drain
Steady
State
T
C
= 25°C
174
A
Current R
(Note 2)
q
JC
P
Power Dissipation
(Note 2)
293
22
W
A
D
R
q
JC
I
D
Continuous Drain
Current R
Steady
State
T = 25°C
A
q
JA
(Notes 1, 2)
4D3N15M AWLYW
4D3N15M = Specific Device Code
= Assembly Location
WL = Wafer Lot Code
P
Power Dissipation
5
W
D
A
R
(Notes 1, 2)
q
JA
I
Pulsed Drain Current
T = 25°C, t = 10 ms
900
A
DM
A
p
Y
= Year Code
W
= Work Week Code
T , T
Operating Junction and Storage Temperature
Range
−55 to
+175
°C
J
stg
I
Source Current (Body Diode)
244
354
A
S
ORDERING INFORMATION
E
AS
Single Pulse Drain−to−Source Avalanche
mJ
†
Device
NTMTSC4D3N15MC
Package
TDFNW8 3000 / Tape &
(Pb−Free) Reel
Shipping
Energy (I = 48.5 A , L = 0.3 mH)
L
pk
T
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
260
°C
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2021 − Rev. 1
NTMTSC4D3N15MC/D
NTMTSC4D3N15MC
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Max
0.5
0.8
30
Unit
Junction−to−Case – Steady State (Note 2)
Junction−to−Top Source – Steady State (Note 2)
Junction−to−Ambient – Steady State (Note 2)
°C/W
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Drain−to−Source Breakdown Voltage
V
= 0 V, I = 250 mA
150
−
−
−
V
(BR)DSS
GS
D
V
/ T
Drain−to−Source Breakdown Voltage
Temperature Coefficient
I = 250 mA, ref to 25°C
D
−
49.84
mV/°C
(BR)DSS
J
I
Zero Gate Voltage Drain Current
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
1
mA
mA
nA
DSS
GS
DS
J
= 120 V
T = 125°C
J
10
100
I
Gate−to−Source Leakage Current
V
= 0 V, V =
GS
20 V
GSS
DS
GS
ON CHARACTERISTICS (Note 3)
V
Gate Threshold Voltage
V
= V , I = 521 mA
2.5
−
3.6
−9.93
3.4
4.5
−
V
GS(TH)
DS
D
V
/ T
J
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I = 250 mA, ref to 25°C
D
mV/°C
mW
GS(TH)
R
V
GS
V
GS
V
DS
= 10 V, I = 95 A
−
4.45
5
DS(on)
D
= 8 V, I = 47 A
−
3.7
D
g
Forward Transconductance
= 5 V, I = 95 A
−
177
1.1
−
S
FS
D
R
Gate−Resistance
T = 25°C
A
−
−
W
G
CHARGES & CAPACITANCES
C
Input Capacitance
V
V
= 0 V, f = 1 MHz,
= 75 V
−
−
−
−
−
−
−
−
−
6514
1750
12.5
79
−
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
C
OSS
C
RSS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= 10 V, V = 75 V,
= 95 A
G(TOT)
GS DS
I
Q
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
21
G(TH)
Q
36
GS
GD
GP
Q
V
11
5.8
Q
Output Charge
V
V
= 0 V, V = 75 V
225
nC
ns
OSS
GS
DS
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
t
Turn*On Delay Time
Rise Time
= 10 V, V =75 V,
−
−
−
−
38
11
48
8
−
−
−
−
d(ON)
GS
DS
I
= 95 A, R = 6 W
D
G
t
r
t
Turn*Off Delay Time
Fall Time
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Forward Diode Voltage
V
S
= 0 V,
T = 25°C
−
−
−
−
−
−
0.86
0.80
85
1.2
−
V
SD
GS
J
I
= 95 A
T = 125°C
J
t
Reverse Recovery Time
Charge Time
V
S
= 0 V, dI /dt = 100 A/ms,
= 95 A
−
ns
RR
GS
S
I
t
t
58
−
a
Discharge Time
38
−
b
Q
Reverse Recovery Charge
194
nC
RR
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
NTMTSC4D3N15MC
TYPICAL CHARACTERISTICS
176
160
144
128
112
96
176
V
GS
= 10 V to 6.5 V
160
144
128
112
96
V
DS
= 5 V
6.0 V
80
80
64
64
5.5 V
5.0 V
T = 25°C
J
48
48
32
32
16
0
16
0
T = 175°C
J
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
V
DS
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
90
80
70
60
50
40
30
20
6
5
4
3
T = 25°C
D
J
T = 25°C
J
I
= 95 A
V
= 8 V
GS
V
GS
= 10 V
2
1
10
0
5.5 6.0 6.5 7.0 7.5 8.0 8.5
9.0
9.5
10
0
30
60
90
120
150
180 210
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
1M
100K
10K
V
= 10 V
= 95 A
V
GS
= 0 V
GS
I
D
2.0
1.5
T = 175°C
J
T = 150°C
J
T = 125°C
J
1.0
0.5
1K
100
−50 −25
0
25
50
75 100 125 150 175
0
30
60
90
120
150
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMTSC4D3N15MC
TYPICAL CHARACTERISTICS
10K
1K
10
C
ISS
Q
9
8
7
6
5
4
3
2
G(TOT)
C
OSS
Q
Q
GD
GS
100
10
1
C
V
I
= 75 V
= 95 A
V
= 0 V
RSS
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
1
1
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
DS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1K
1K
100
10
V
V
= 10 V
= 75 V
= 95 A
V
= 0 V
GS
GS
DS
I
D
t
r
100
t
d(off)
t
f
t
d(on)
10
1
T = 175°C
J
T = 150°C
J
1
T = 25°C
J
T = −55°C
J
0.1
10
R , GATE RESISTANCE (W)
100
0.2 0.3
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.5
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10K
1K
100
10 ms
T
= 25°C
100
10
J(initial)
100 ms
T
= 25°C
Single Pulse
≤ 10 V
C
T
= 125°C
10
1
J(initial)
500 ms
1 ms
10 ms
100 ms
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1 s
0.1
10
100
1K
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMTSC4D3N15MC
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
10%
5%
2%
0.01
1%
0.001
Single Pulse
0.000001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3
CASE 507AS
ISSUE B
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot Code
Y
= Year Code
W
= Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON95716G
TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3
PAGE 1 OF 1
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