NTMYS011N04CTWG [ONSEMI]
功率 MOSFET，单 N 沟道，40 V，12 mΩ，35 A;
| 型号： | NTMYS011N04CTWG |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，单 N 沟道，40 V，12 mΩ，35 A |
| 文件： | 总7页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMYS011N04C
Power MOSFET
40 V, 12 mW, 35 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• LFPAK4 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
40 V
12 mꢂ @ 10 V
35 A
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D (5)
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
35
A
C
D
ꢀ
JC
T
C
20
(Notes 1, 2, 3)
Power Dissipation
T
C
P
28
W
A
D
G (4)
R
(Notes 1, 2)
ꢀ
JC
T
C
= 100°C
9.1
13
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
S (1,2,3)
N−CHANNEL MOSFET
ꢀ
JA
T = 100°C
A
9.1
3.8
1.9
173
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
ꢀ
JA
MARKING
DIAGRAM
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ꢁ s
A
I
DM
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
011N04
C
AWLYW
Source Current (Body Diode)
I
24
75
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
LFPAK4
CASE 760AB
Energy (T = 25°C, I
= 1.9 A)
J
L(pk)
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
011N04C
A
WL
Y
W
= Specific Device Code
= Assembly Location
=Wafer Lot
= Year
= Work Week
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
5.3
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
ꢀ
JC
R
39
ꢀ
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2019 − Rev. 0
NTMYS011N04C/D
NTMYS011N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
25
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
10
DSS
J
V
= 0 V,
GS
DS
ꢁ
A
V
= 40 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 20 ꢁ A
2.5
3.5
12
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
−7.6
10
mV/°C
GS(TH)
R
V
GS
= 10 V
I = 10 A
D
mꢂ
DS(on)
g
FS
V
= 15 V, I = 10 A
111
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
420
230
11
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
7.9
1.6
2.5
1.5
4.7
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
= 10 V, V = 32 V; I = 10 A
GS
GD
GP
GS
DS
D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
8.0
16
d(ON)
Rise Time
t
r
V
= 10 V, V = 32 V,
DS
GS
D
ns
V
I
= 10 A, R = 1 ꢂ
G
Turn−Off Delay Time
t
16
d(OFF)
Fall Time
t
5.0
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.84
0.71
19
1.2
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
9.0
10
ns
V
= 0 V, dIS/dt = 100 A/ꢁ s,
GS
I
S
= 10 A
Discharge Time
t
b
Reverse Recovery Charge
Q
6.7
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ꢁ s, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMYS011N04C
TYPICAL CHARACTERISTICS
35
30
25
20
15
10
35
10 V
7 V
8 V
6 V
V
DS
= 3 V
30
25
20
15
10
9 V
5 V
4 V
T = 25°C
J
5
0
5
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
15
14
13
12
11
10
9
I
= 10 A
V
GS
= 10 V
D
T = 25°C
J
15
10
8
7
5
0
6
5
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.9
1.7
1.5
1.3
1.1
10K
1K
I
= 10 A
= 10 V
T = 150°C
J
D
V
GS
T = 125°C
J
T = 85°C
J
100
10
0.9
0.7
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMYS011N04C
TYPICAL CHARACTERISTICS
1K
10
C
iss
9
8
7
6
5
4
3
C
oss
100
Q
Q
gd
gs
10
1
C
rss
T = 25°C
GS
f = 1 MHz
V
I
= 32 V
= 10 A
J
V
DS
2
1
0
= 0 V
D
T = 25°C
J
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
V
GS
= 0 V
8.5
t
r
6.4
4.3
t
d(off)
t
10
d(on)
t
f
2.2
0.1
V
V
= 10 V
= 32 V
GS
DS
T =
−55°C
J
T = 125°C
T = 25°C
J
J
1
1
10
R , GATE RESISTANCE (ꢂ)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10
T
= 25°C
≤ 10 V
C
V
GS
Single Pulse
T
= 25°C
J(initial)
10
10 ꢁ s
T
= 100°C
J(initial)
1
1
0.5 ms
1 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMYS011N04C
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMYS011N04CTWG
011N04C
LFPAK4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
DATE 19 NOV 2019
GENERIC
MARKING DIAGRAM*
XXXXXX = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
XXXXXX
XXXXXX
AWLYW
W
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82777G
LFPAK4 5x6
PAGE 1 OF 1
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