NTR4503NT1 [ONSEMI]
Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23; 功率MOSFET的30 V , 2.5 A单N沟道, SOT -23型号: | NTR4503NT1 |
厂家: | ONSEMI |
描述: | Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 |
文件: | 总6页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• Pb−Free Package is Available
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V
R
TYP
I MAX
D
(BR)DSS
DS(on)
Applications
85 mW @ 10 V
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
30 V
2.5 A
105 mW @ 4.5 V
N−Channel
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
D
V
30
±20
2.0
DSS
Gate−to−Source Voltage
V
V
GS
Continuous Drain
Current (Note 1)
Steady T = 25°C
State
I
D
A
A
G
T = 85°C
A
1.5
t ≤ 10 s T = 25°C
2.5
A
S
Power Dissipation
(Note 1)
Steady T = 25°C
State
P
0.73
W
A
A
D
MARKING DIAGRAM/
PIN ASSIGNMENT
Continuous Drain
Current (Note 2)
Steady T = 25°C
I
D
1.5
1.1
A
State
T = 85°C
A
3
3
Power Dissipation
(Note 2)
T = 25°C
A
P
D
0.42
W
Drain
1
Pulsed Drain Current
t = 10 ms
I
6.0
A
V
2
p
DM
TR3
ESD Capability (Note 3)
C = 100 pF,
RS = 1500 W
ESD
125
SOT−23
CASE 318
STYLE 21
1
Gate
2
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
Source
T
stg
Source Current (Body Diode)
I
2.0
A
TR3 = Specific Device Code
= Date Code
S
M
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†
Device
Package
Shipping
NTR4503NT1
SOT−23
3000/Tape & Reel
THERMAL RESISTANCE RATINGS
SOT−23
(Pb−Free)
NTR4503NT1G
3000/Tape & Reel
10000/Tape & Reel
Parameter
Symbol
Max
170
100
300
Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
q
q
JA
JA
JA
SOT−23
(Pb−Free)
NTR4503NT3G
R
R
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2005 − Rev. 3
NTR4503N/D
NTR4503N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = 250 mA
30
36
V
(BR)DSS
GS
D
I
V
= 0 V, V = 24 V
1.0
10
mA
DSS
GS
DS
V
GS
= 0 V, V = 24 V, T = 125°C
DS J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.0
1.75
85
3.0
110
140
V
GS(TH)
GS
DS
D
Drain−to−Source On−Resistance
R
V
= 10 V, I = 2.5 A
mW
DS(on)
GS
GS
DS
D
V
V
= 4.5 V, I = 2.0 A
105
5.3
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
= 4.5 V, I = 2.5 A
S
FS
D
C
135
52
pF
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= 15 V
Reverse Transfer Capacitance
Input Capacitance
C
15
rss
C
130
42
250
75
pF
nC
iss
V
= 0 V, f = 1.0 MHz,
= 24 V
GS
Output Capacitance
C
oss
V
DS
Reverse Transfer Capacitance
Total Gate Charge
C
13
25
rss
Q
Q
3.6
0.3
0.6
0.7
1.9
0.3
0.6
0.9
7.0
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 10 V, V = 15 V,
DS
I
D
= 2.5 A
Q
GS
GD
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= 4.5 V, V = 24 V,
DS
I
D
= 2.5 A
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
5.8
5.8
14
12
10
25
5.0
ns
ns
d(on)
t
r
V
V
= 10 V, V = 15 V,
DD
GS
I
= 1 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
1.6
4.8
6.7
13.6
1.8
Turn−On Delay Time
Rise Time
d(on)
t
r
= 10 V, V = 24 V,
GS
D
DD
I
= 2.5 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
= 0 V, I = 2.0 A
0.85
9.2
1.2
V
SD
RR
GS
S
t
ns
nC
V
GS
= 0 V, I = 2.0 A,
S
dI /dt = 100 A/ms
S
Q
4.0
RR
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTR4503N
TYPICAL PERFORMANCE CURVES
10
8
10 V
6 V
5 V
4.5 V
4.2 V
4 V
3.8 V
3.6 V
V
≥ 10 V
DS
T = 25°C
J
8
4
0
6
3.4 V
3.2 V
4
100°C
3 V
2.8 V
2.6 V
25°C
2
0
T = −55°C
J
0
1
2
3
4
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.3
0.25
0.2
I
= 2.5 A
D
T = 25°C
J
T = 25°C
J
0.11
0.10
0.09
V
GS
= 4.5 V
0.15
0.1
0.08
0.07
0.05
0
V
GS
= 10 V
4
2
3
5
6
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1000
100
10
1.8
V
GS
= 0 V
I
V
= 2.5 A
D
= 10 V
GS
1.6
T = 150°C
J
1.4
1.2
1.0
0.8
0.6
T = 100°C
J
1
−50 −25
0
25
50
75
100
125 150
5
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTR4503N
TYPICAL PERFORMANCE CURVES
300
200
15
10
15
V
GS
= 0 V
V
= 0 V
T = 25°C
J
DS
V
DS
C
iss
Q
G
10
C
rss
V
I
GS
5
0
100
0
5
0
Q
Q
GD
GS
= 2.5 A
D
C
oss
T = 25°C
J
10
5
0
5
10
15
20
25
30
0
1
2
3
4
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
3
2
V
I
= 24 V
= 2.5 A
= 10 V
V
GS
= 0 V
DD
T = 25°C
J
D
V
GS
t
d(off)
t
f
10
t
d(on)
t
r
1
0
1
1
10
R , GATE RESISTANCE (OHMS)
100
0.3
0.5
0.6
0.7
0.8
0.9
1
0.4
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTR4503N
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
L
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
S
C
B
1
2
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
V
G
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
H
J
D
K
K
L
S
V
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NTR4503N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTR4503N/D
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