NTSV30120CTG [ONSEMI]
Very Low Forward Voltage Trench-based Schottky Rectifier; 非常低正向电压沟槽型肖特基整流器
| 型号： | NTSV30120CTG |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Forward Voltage Trench-based Schottky Rectifier |
| 文件： | 总8页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTST30120CT,
NTSJ30120CTG,
NTSB30120CT-1G,
NTSB30120CTG,
NTSB30120CTT4G
http://onsemi.com
Very Low Forward Voltage
Trench-based Schottky
Rectifier
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 30 AMPERES,
120 VOLTS
Exceptionally Low VF = 0.50 V at IF = 5 A
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
PIN CONNECTIONS
1
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• Pb−Free and Halide−Free Packages are Available
2, 4
3
4
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
TO−220AB
CASE 221A
STYLE 6
I2PAK
CASE 418D
STYLE 3
1
1
2
2
3
3
4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
TO−220FP
CASE 221AH
D2PAK
CASE 418B
Leads are Readily Solderable
1
2
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2013 − Rev. 4
NTST30120CT/D
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
120
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 125°C)
Per device
Per diode
30
15
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz, T = 130°C)
Per device
Per diode
60
30
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
150
FSM
Operating Junction Temperature
T
−40 to +150
−40 to +150
10,000
°C
°C
J
Storage Temperature
T
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
NTST30120CTG
NTSB30120CT−1G
Rating
Symbol
NTSB30120CTG NTSJ30120CTG
Unit
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
R
2.5
70
1.14
46.6
4.05
105
°C/W
°C/W
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(I = 5 A, T = 25°C)
0.56
0.71
0.90
−
−
1.08
F
J
(I = 7.5 A, T = 25°C)
F
J
(I = 15 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.50
0.60
0.68
−
−
0.76
F
J
(I = 7.5 A, T = 125°C)
F
J
(I = 15 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 1)
(V = 90 V, T = 25°C)
I
R
16
11
−
−
mA
mA
R
J
(V = 90 V, T = 125°C)
R
J
(Rated dc Voltage, T = 25°C)
−
25
800
100
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
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2
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
TYPICAL CHARACTERISITICS
100
10
100
T = 150°C
A
T = 150°C
A
10
1.0
0.1
T = 25°C
A
T = 125°C
A
T = 125°C
A
1.0
0.1
0.01
T = 25°C
A
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
20
30
40
50
60
70
80
90 100 110 120
v , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Current
Characteristics
10000
1000
100
30
R
= 1.3°C/W
q
JC
T = 25°C
J
dc
25
20
15
10
SQUARE WAVE
5
0
10
0.1
0
20
40
60
80
100
120
140
1
10
100
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
30
25
20
60
55
50
I
/I = 20
PK AV
R
= 1.3°C/W
q
JC
dc
I
/I = 10
PK AV
I
/I = 5
PK AV
45
40
35
30
25
20
15
10
SQUARE
WAVE
SQUARE WAVE
15
10
dc
5
0
5
0
T = 150°C
J
0
2
4
6
8
10 12 14 16 18 20
0
20
40
60
80
100
120
140
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
TYPICAL CHARACTERISITICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Single Pulse
0.00001 0.0001
1%
0.01
0.000001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 7. Typical Transient Thermal Response for NTST30120CT and NTSB30120CT−1G
10
50% Duty Cycle
20%
1
0.1
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response for NTSJ30120CTG
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 9. Typical Transient Thermal Response for NTSB30120CTG
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4
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
ORDERING INFORMATION
Device
Package
Shipping
NTST30120CTG
NTSJ30120CTG
NTSB30120CT−1G
NTSB30120CTG
NTSB30120CTT4G
TO−220AB
(Pb−Free)
50 Units / Rail
TO−220FP
(Halide−Free)
50 Units / Rail
50 Units / Rail
2
I PAK
(Pb−Free)
2
D PAK
50 Units / Rail
(Pb−Free)
2
D PAK
800 / Tape & Reel
(Pb−Free)
MARKING DIAGRAMS
AYWW
TS30120CG
AKA
AYWW
TS30120CG
AKA
AYWW
TS30120Cx
AKA
AYWW
TS30120CG
AKA
2
2
TO−220AB
TO−220FP
I PAK
D PAK
A
= Assembly Location
Y
= Year
WW
AKA
x
= Work Week
= Polarity Designator
= G or H
G
H
= Pb−Free Package
= Halide−Free Package
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5
NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MILLIMETERS
4
1
MAX
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
SEATING
PLANE
A
B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
E
A
P
E/2
H1
A1
M
M
B A
0.14
4
Q
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
D
C
NOTE 3
1
2
3
MILLIMETERS
DIM MIN
MAX
4.70
2.90
2.70
0.84
1.40
0.79
15.30
10.30
A
A1
A2
b
4.30
2.50
2.50
0.54
1.10
0.49
14.70
9.70
L
L1
b2
c
3X
c
b
3X
b2
e
M
M
0.25
B
A
C
D
A2
E
e
2.54 BSC
H1
L
6.70
12.70
---
7.10
14.73
2.80
L1
P
3.00
2.80
3.40
3.20
Q
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NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
C
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
3. 418B−01 THRU 418B−03 OBSOLETE,
V
W
NEW STANDARD 418B−04.
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055
M
N
P
R
S
V
H
D 3 PL
M
M
0.13 (0.005)
T B
1.14
1.40
VARIABLE
CONFIGURATION
ZONE
N
P
L
R
U
L
L
M
M
M
F
F
F
VIEW W−W
VIEW W−W
VIEW W−W
1
2
3
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NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG,
NTSB30120CTT4G
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
4
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.51
9.65
4.06
0.66
1.14
MAX
9.65
10.31
4.70
0.89
1.40
W
A
B
C
D
E
F
0.335
0.380
0.160
0.026
0.045
0.380
0.406
0.185
0.035
0.055
1
2
3
F
0.122 REF
0.100 BSC
3.10 REF
2.54 BSC
−T−
G
H
J
SEATING
PLANE
0.094
0.013
0.500
0.110
0.025
0.562
2.39
0.33
2.79
0.64
K
K
S
V
W
12.70
14.27
S
0.390 REF
9.90 REF
0.045
0.522
0.070
0.551
1.14
13.25
1.78
14.00
STYLE 3:
PIN 1. ANODE
J
G
2. CATHODE
3. ANODE
4. CATHODE
H
D 3 PL
M
M
T B
0.13 (0.005)
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NTST30120CT/D
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