NTTFS007P02P8 [ONSEMI]
Power MOSFET, Single, P-Channel, -20V, 6.5mΩ, -56A, PQFN8 3x3;
| 型号： | NTTFS007P02P8 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, P-Channel, -20V, 6.5mΩ, -56A, PQFN8 3x3 |
| 文件： | 总7页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(on)
−20 V
6.5 mW @ −4.5 V
9.8 mW @ −2.5 V
20 mW @ −1.8 V
−56 A
-20 V, -56 A, 6.5 mW
NTTFS007P02P8
Pin 1
Pin 1
S
S
General Description
S
G
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for R
switching performance and ruggedness.
,
DS(on)
D
D
D
D
Top
Features
Bottom
Max R
Max R
Max R
= 6.5 mW at V = −4.5 V, I = −14 A
GS D
DS(on)
DS(on)
DS(on)
PQFN8 3.3X3.3, 0.65P
(Power 33)
= 9.8 mW at V = −2.5 V, I = −11 A
GS
D
CASE 483AX
= 20 mW at V = −1.8 V, I = −9 A
GS
D
High Performance Trench Technology for Extremely Low R
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
DS(on)
PIN ASSIGNMENT
S
8
D
This Device is Pb−Free, Halide Free and is RoHS Compliant
1
Applications
Load Switch
Battery Management
Power Management
Reverse Polarity Protection
S
S
2
7
6
5
D
D
D
3
4
G
MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
MARKING DIAGRAM
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
−20
Unit
V
V
DS
GS
V
8
V
&Z&3&K
FDMC
6688P
I
D
A
−Continuous, T = 25C
−56
−14
−226
C
−Continuous, T = 25C (Note 1a)
A
−Pulsed (Note 3)
P
D
Power Dissipation
W
T
= 25C
30
2.3
C
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date−Code (YWW)
= 2−Digit Lot Traceability Code
T = 25C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
C
J
STG
FDMC6688P = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
THERMAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
NTTFS007P02P8
PQFN8
(Power 33)
(Pb−Free)
3,000 /
Tape & Reel
Symbol
Parameter
Value
3.8
Unit
C/W
C/W
R
Thermal Resistance, Junction to Case
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
53
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
April, 2023 − Rev. 0
NTTFS007P02P8/D
NTTFS007P02P8
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250 mA, V = 0 V
−20
−
−
−
V
DSS
D
GS
DBV
/ DT
Breakdown Voltage Temperature Coefficient
= −250 mA,
referenced to 25C
−
−16
mV/C
DSS
J
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −16 V, V = 0 V
−
−
−
−
−1
mA
DSS
DS
GS
I
= 8 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = −250 mA
−0.4
−0.75
−1
V
DS D
DV
/ DT
Gate to Source Threshold Voltage
Temperature Coefficient
I = −250 mA,
D
referenced to 25C
−
3
−
mV/C
GS(th)
J
V
V
V
V
= −4.5 V, I = −14 A
−
−
−
−
5.3
7
6.5
9.8
20
R
Static Drain to Source On−Resistance
mW
GS
GS
GS
GS
D
DS(on)
= −2.5 V, I = −11 A
D
= −1.8 V, I = −9 A
10.7
7.3
D
= −4.5 V, I = −14 A,
11
D
T = 125C
J
g
FS
Forward Transconductance
V
DS
= −5 V, I = −14 A
−
80
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
−
−
4956
678
618
4.5
7435
1020
930
−
pF
pF
pF
W
V
= −10 V, V = 0 V,
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
−
−
−
−
−
−
−
19
33
35
53
190
109
61
−
ns
ns
V
V
= −10 V, I = −14 A,
d(on)
DD
GS
D
= −4.5 V, R
= 6 W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
119
68
ns
d(off)
t
f
ns
Q
g
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
44
nC
nC
nC
V
DD
V
GS
= −10 V, I = −14 A,
D
= −4.5 V
Q
gs
gd
7.4
11
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
V
= 0 V, I = −14 A (Note 2)
−
−
−
−
−0.8
−0.6
26
−1.2
−1.2
41
V
V
Source to Drain Diode Forward Voltage
SD
GS
S
= 0 V, I = −2 A (Note 2)
GS
S
t
Reverse Recovery Time
ns
I = −14 A, di/dt = 100 A/ms
F
rr
Q
Reverse Recovery Charge
10
20
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
JA
a. 53C/W when mounted on
b. 125C/W when mounted on a
2
a 1 in pad of 2 oz copper.
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. Pulse Id refers to Forward Bias Safe Operation Area.
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2
NTTFS007P02P8
TYPICAL CHARACTERISTICS
(T = 25C Unless Otherwise Noted)
J
3
150
100
50
V
= −4.5 V
= −3.8 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
V
= −2.5 V
GS
V
= −3.5 V
2
1
0
GS
V
GS
= −3.1 V
V
GS
= −3.1 V
V
= −2.5 V
GS
V
GS
= −4.5 V
V
GS
= −3.5 V
V
GS
= −3.8 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0 1.5 2.0
2.5
0
50
100
150
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
I
V
= −14 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= −4.5 V
GS
40
I
D
= −14 A
30
20
T = 125C
J
10
0
0.8
0.7
T = 25C
J
−75 −50 −25
0
25
50
75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate to Source
Junction Temperature
Voltage
200
150
100
10
1
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
T = 150C
J
V
DS
= −5 V
100
50
0
T = 25C
J
0.1
T = 150C
J
T = −55C
T = 25C
J
J
0.01
T = −55C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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3
NTTFS007P02P8
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
(T = 25C Unless Otherwise Noted)
J
4.5
3.0
1.5
0.0
10000
I
D
= −14 A
C
iss
V
= −8 V
DD
C
C
oss
rss
V
= −10 V
DD
1000
V
DD
= −12 V
f = 1 MHz
= 0 V
V
GS
100
0
20
40
60
0.1
1
10
20
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
60
40
500
R
= 3.8C/W
q
JC
V
GS
= −4.5 V
10 ms
100
100 ms
V
GS
= −2.5 V
10
1 ms
THIS AREA IS
LIMITED BY R
DS(on)
10 ms
DC
20
0
SINGLE PULSE
1
T = MAX RATED
CURVE BENT
TO MEASURED
DATA
J
R
= 3.8C/W
q
JC
T
C
= 25C
0.1
0.1
1
10
100
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (C)
C
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Continuous Drain
Current vs. Case Temperature
Figure 10. Forward Bias Safe Operating Area
10000
1000
SINGLE PULSE
R
= 3.8C/W
q
JC
T
C
= 25C
100
10
−5
−4
−3
−2
−1
10
10
10
10
t, PULSE WIDTH (s)
10
1
Figure 11. Single Pulse Maximum Power Dissipation
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4
NTTFS007P02P8
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
(T = 25C Unless Otherwise Noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D= 0.5
P
DM
0.2
0.1
t
1
0.1
0.05
t
2
0.02
NOTES:
Z
R
(t) = r(t) x R
q
q
JC
JC
0.01
= 3.8C/W
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
SINGLE PULSE
0.001
0.005
J
DM
1
2
−5
−4
−3
−2
−1
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AX
ISSUE B
DATE 24 JUN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13673G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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