NTTFS015P03P8ZTAG [ONSEMI]
MOSFET，单 -30V P 沟道;
| 型号： | NTTFS015P03P8ZTAG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET，单 -30V P 沟道 |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTFS015P03P8Z
MOSFET – Power, Single,
P-Channel, m8FL
-30 V, 7.5 mW
Features
• Ultra Low R
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to Improve System Efficiency
DS(on)
• Advanced Package Technology in 3.3x3.3mm for Space Saving and
Excellent Thermal Conduction
V
R
I
D
(BR)DSS
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
7.5 mW @ −10 V
12 mW @ −4.5 V
−30 V
−47.6 A
Typical Applications
• Power Load Switch
S (1, 2, 3)
• Protection: Reverse Current, Over Voltage, and Reverse Negative
Voltage
• Battery Management
G (4)
P−Channel
MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−30
Unit
V
D (5, 6, 7, 8)
V
DSS
Gate−to−Source Voltage
V
"25
−47.6
−34.4
33.8
V
GS
MARKING
DIAGRAM
Continuous Drain Cur-
T
T
T
= 25°C
= 85°C
= 25°C
I
A
C
C
C
D
rent R
(Notes 1, 2)
q
JC
1
Steady
State
1
S
S
S
G
D
D
D
D
Power Dissipation R
(Notes 1, 2)
P
W
A
q
D
JC
15P3
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Continuous Drain Cur-
rent R (Notes 1, 2)
T = 25°C
A
I
−13.4
−9.6
2.66
D
q
JA
T = 85°C
A
Steady
State
15P3
A
Y
= Specific Device Code
= Assembly Location
= Year
Power Dissipation R
(Notes 1, 2)
T = 25°C
A
P
W
q
D
JA
WW
G
= Work Week
= Pb−Free Package
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−195
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
150
°C
J
stg
(Note: Microdot may be in either location)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
NTTFS015P03P8ZTAG
WDFN8 1500 / Tape &
THERMAL RESISTANCE MAXIMUM RATINGS
(Pb−Free) Reel
Parameter
Symbol
Value
Unit
NTTFS015P03P8ZTWG WDFN8 3000 / Tape &
(Pb−Free) Reel
Junction−to−Case − Steady State (Drain)
R
3.7
°C/W
q
JC
(Note 2)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Junction−to−Ambient − Steady State (Note 2)
R
47
°C/W
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a
76mm x 76mm x 1.6mm board.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2019 − Rev. 0
NTTFS015P03P8Z/D
NTTFS015P03P8Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−30
V
(BR)DSS
D
Drain−to−Source Breakdown Volt-
age Temperature Coefficient
V
/
I
D
= −250 mA, ref to 25°C
−4.4
mV/°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−1.0
"10
mA
mA
DSS
GS
J
V
= −24 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "25 V
GS
GSS
DS
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = −250 mA, ref to 25°C
D
5.6
5.0
8.0
77
mV/°C
mW
GS(TH)
J
R
V
= −10 V, I = −12 A
7.5
12
DS(on)
GS
GS
D
V
= −4.5 V, I = −10 A
D
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −5 V, I = −10 A
S
D
C
V
GS
= 0 V, f = 1.0 MHz,
DS
2706
907
875
37
pF
iss
V
= −15 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
5.1
G(TH)
V
= −4.5 V, V = −15 V,
DS
GS
I
= −10 A
D
Q
8.2
GS
Q
21.7
62.3
GD
V
GS
= −10 V, V = −15 V,
105
G(TOT)
DS
I
= −10 A
D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
25
138
55
ns
ns
d(on)
t
r
V
= −4.5 V, V = −15 V,
DS
GS
I
= −10 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
98
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
17
34
99
97
d(on)
t
r
V
V
= −10 V, V = −15 V,
DS
GS
I
= −10 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
= 0 V,
= −10 A
T = 25°C
−0.8
−0.65
40.7
18.4
22.3
29
−1.3
V
SD
GS
J
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dl /dt = 100 A/ms,
s
I = −10 A
s
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
NTTFS015P03P8Z
TYPICAL CHARACTERISTICS
90
80
70
60
50
40
30
20
90
V
= −10 V
−4.5 V
−4.2 V
GS
80
70
60
50
40
30
20
V
= −10 V
DS
−4.0 V
−3.8 V
−3.6 V
−3.4 V
−3.2 V
−3.0 V
T = 25°C
J
10
0
10
0
T = −55°C
T = 125°C
J
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
5
0.5 1.0 1.5
2.0 2.5 3.0 3.5 4.0 4.5
−V , DRAIN−TO−SOURCE VOLTAGE (V)
−V , GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
I
D
= −10 A
20
T = 25°C
J
V
= −4.5 V
= −10 V
GS
15
10
6
V
GS
4
5
0
2
0
T = 25°C
J
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100,000
10,000
1000
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
= −10 A
D
T = 150°C
J
V
GS
= −10 V
T = 125°C
J
T = 85°C
J
100
10
0.6
0.5
−50 −25
0
25
50
75
100
125 150
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS015P03P8Z
TYPICAL CHARACTERISTICS
10,000
1000
10
V
= 0 V
GS
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
T = 25°C
J
= −15 V
C
iss
f = 1 MHz
I
D
= −10 A
C
oss
C
rss
Q
Q
gd
gs
1
0
100
0
5
10
15
20
25
30
100
100
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
V
= 0 V
V
= −15 V
= −10 A
= −10 V
GS
DS
I
D
t
f
V
GS
t
d(off)
t
r
100
10
1
t
d(on)
T = 125°C
T = 25°C
T = −55°C
J
J
J
0.1
1
10
R , GATE RESISTANCE (W)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
−V , SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
V
GS
≤ 10 V
Single Pulse
T
C
= 25°C
500 ms
1 ms
1
10 ms
R
Limit
Thermal Limit
Package Limit
DS(on)
dc
0.1
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTFS015P03P8Z
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
20%
10%
5%
10
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 12. Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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