NTTFS080N10GTAG [ONSEMI]
MOSFET Power, Single N-Channel, μ8FL, 100V, 82mΩ, 15A;
| 型号： | NTTFS080N10GTAG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET Power, Single N-Channel, μ8FL, 100V, 82mΩ, 15A |
| 文件： | 总7页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, m8FL
100 V, 72 mW, 16 A
NTTFS080N10G
Features
www.onsemi.com
• Wide SOA for Linear Mode Operation
• Low R
to Minimize Conduction Losses
DS(on)
• High Peak UIS Current Capability for Ruggedness
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
100 V
72 mW @ 10 V
16 A
N−Channel
D (5 − 8)
Typical Applications
• 48 V Hot Swap System, Load Switch, Soft−Start, E−Fuse
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
G (4)
V
DSS
Gate−to−Source Voltage
V
GS
V
S (1, 2, 3)
Continuous Drain
Current R
I
16
A
T
= 25°C
= 100°C
= 25°C
D
C
Steady
State
q
JC
11
T
C
(Note 2)
MARKING DIAGRAM
1
Power Dissipation
T
C
P
39
W
A
D
Steady
State
1
S
S
S
G
D
D
D
D
R
(Note 2)
q
JC
T
C
= 100°C
19
80NG
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Continuous Drain
Current R
I
D
4.1
2.8
2.5
1.2
125
T = 25°C
A
Steady
State
q
JA
T = 100°C
A
(Notes 1, 2)
Power Dissipation
T = 25°C
A
P
W
D
Steady
State
80NG = Specific Device Code
R
(Notes 1, 2)
q
JA
A
Y
= Assembly Location
= Year
= Work Week
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
WW
G
= Pb−Free Package
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
(Note: Microdot may be in either location)
Source Current (Body Diode)
I
32
40
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
ORDERING INFORMATION
Energy (I
= 5.2 A, L = 3 mH)
L(pk)
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in , 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
July, 2021 − Rev. 0
NTTFS080N10G/D
NTTFS080N10G
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
3.8
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
60
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, referenced to 25°C
D
87.6
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 150°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 22 mA
2.0
4.0
72
V
GS(TH)
GS
DS
D
Negative Treshold Temperature
Coefficient
V
/T
J
I
= 22 mA, referenced to 25°C
−9.37
mV/°C
GS(TH)
D
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
R
V
= 10 V, I = 4 A
60
6
mW
S
DS(on)
GS
D
g
V
= 5 V, I = 4 A
FS
DS D
R
T = 25°C
A
0.53
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
560.5
64
pF
nC
iss
V
= 0 V, f = 1 MHz,
DS
GS
Output Capacitance
C
oss
V
= 50 V
Reverse Transfer Capacitance
Total Gate Charge
C
9
rss
Q
8.6
1.7
3.2
2
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Output Charge
Q
G(TH)
V
GS
= 10 V, V = 50 V, I = 4 A
DS D
Q
GS
GD
Q
Q
V
GS
= 10 V, V = 50 V
6.1
OSS
DS
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
t
8.4
3
ns
d(on)
t
r
V
= 10 V, V = 50 V,
DS
GS
D
I
= 4 A, R = 4.7 W
G
Turn−Off Delay Time
Fall Time
11.9
2.8
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.83
0.70
17
1.2
V
SD
J
V
= 0 V,
= 4 A
GS
S
I
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
ns
nC
ns
RR
V
GS
= 0 V, dl /dt = 300 A/ms,
S
I
S
= 2 A
Q
37
RR
RR
t
14
V
GS
= 0 V, dl /dt = 1000 A/ms,
S
I
S
= 2 A
Q
60.5
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS080N10G
TYPICAL CHARACTERISTICS
25
20
15
10
25
12 V
10 V
V
GS
= 15 V
T = −55°C
J
V
DS
= 5 V
9.5 V
9.0 V
T = 25°C
20
15
10
J
4.5 V
8.5 V
8.0 V
7.5 V
T = 125°C
J
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
5
0
5
0
0
1
2
3
4
5
0
2
5
1
2
V , GATE−TO−SOURCE VOLTAGE (V)
GS
3
4
5
6
7
8
9
10
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
95
90
85
80
75
70
65
60
55
50
200
180
160
140
120
100
80
T = 25°C
J
T = 25°C
J
I
D
= 4 A
V
GS
= 10 V
60
40
45
40
5
6
7
8
9
10
4
6
8
10
12
14
16
18 20
V
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
GS
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current
Voltage
2.0
1.8
1.6
1.4
1.2
1.0
100K
10K
1K
I
V
= 4 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
1
0.1
0.8
0.6
0.4
0.01
0.001
−50 −25
0
25
50
75 100 125 150 175
15
25
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS080N10G
TYPICAL CHARACTERISTICS
1K
10
C
ISS
9
8
7
Q
Q
GD
GS
100
C
C
OSS
6
5
4
3
10
1
RSS
V
DS
= 50 V
V
= 0 V
2
1
0
GS
I
D
= 4 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
20
40
60
80
100
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
V
GS
= 0 V
V
V
= 10 V
= 50 V
GS
DS
I
D
= 4 A
T = 175°C
J
10
t
d(off)
d(on)
r
T = 150°C
J
10
t
T = 125°C
J
t
T = 25°C
J
t
f
T = −55°C
J
1
1
1
10
R , GATE RESISTANCE (W)
100
0
0.4
0.8
1.2
1.6
2.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
100
10
T
= 25°C
J(initial)
10 ms
100 ms
T
= 100°C
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
V
1
GS
1 ms
R
Limit
DS(on)
10 ms
100 ms
Thermal Limit
Package Limit
1
0.1
1
10
100
0.000001 0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS080N10G
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NTTFS080N10G
80NG
m8FL
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTTFS080N10G
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
2X
ISSUE D
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
c
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.13
1.50
−−−
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
0.116
0.058
0.009
0.124
0.068
0.016
2.95
1.47
0.23
3.15
1.73
0.40
0.10
0.10
C
C
A
C
6X
e
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
SEATING
PLANE
0.005
0.059
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
BOTTOM VIEW
G
2.30
0.57
0.47
0.75
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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