NVBLS1D1N08H [ONSEMI]
MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A;
| 型号： | NVBLS1D1N08H |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mΩ, 351 A |
| 文件： | 总7页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, TOLL
80 V, 1.05 mW, 351 A
NVBLS1D1N08H
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• AEC−Q101 Qualified and PPAP Capable
• Lowers Switching Noise/EMI
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
80 V
1.05 mW @ 10 V
351 A
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
G
V
DSS
Gate−to−Source Voltage
V
20
V
GS
S
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
351
248
311
156
41
A
C
D
Current R
q
N−CHANNEL MOSFET
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
29
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
4.2
2.1
900
W
D
R
(Notes 1, 2)
q
JA
TOLL
T = 100°C
A
CASE 100CU
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
S
259
A
Single Pulse Drain−to−Source Avalanche
E
AS
1580
mJ
AYWWZZ
NVBLS
Energy (I
= 31.9 A)
L(pk)
1D1N08H
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NVBLS1D1N08H = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.48
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
R
35.8
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2020 − Rev. 2
NVBLS1D1N08H/D
NVBLS1D1N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
57
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 80 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 650 mA
2.0
2.9
−7.7
0.92
213
4.0
V
mV/°C
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
GS(TH) J
R
V
GS
= 10 V
I = 50 A
D
1.05
DS(on)
g
FS
V =5 V, I = 50 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
11200
1600
49
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 40 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
166
29
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
44
= 10 V, V = 64 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
35
4
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
45
43
d(ON)
Rise Time
t
r
V
= 10 V, V = 64 V,
DS
GS
D
ns
V
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
t
141
43
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.76
0.6
92
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Reverse Recovery Charge
Q
234
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVBLS1D1N08H
TYPICAL CHARACTERISTICS
250
200
150
100
250
10 V to 6 V
5.0 V
V
DS
= 5 V
200
150
100
V
= 4.5 V
4.0 V
GS
T = 25°C
J
50
0
50
0
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
15
10
2.0
1.5
T = 25°C
D
J
I
= 50 A
1.0
0.5
V
GS
= 10 V
5
0
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1E−03
1E−04
1E−05
1E−06
1E−07
T = 175°C
J
V
I
= 10 V
= 50 A
GS
T = 150°C
J
D
T = 125°C
J
T = 100°C
J
T = 85°C
J
T = 25°C
J
1E−08
1E−09
0.8
0.6
−75 −50 −25
0
25 50 75 100 125 150 175
5
15
V
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVBLS1D1N08H
TYPICAL CHARACTERISTICS
10
100K
10K
Q
G(tot)
C
ISS
8
6
4
C
OSS
RSS
Q
Q
GD
GS
1K
100
10
T = 25°C
C
J
2
0
V
= 0 V
I
D
= 50 A
GS
f = 1 MHz
V
DS
= 64 V
0
40
80
120
160
200
0.1
1
10
80
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
250
100
V
V
= 10 V
= 64 V
= 50 A
V
GS
= 0 V
GS
t
t
d(off)
DS
I
D
10
1
t
f
t
r
100
10
d(on)
0.1
T = 175°C
J
0.01
T = 25°C
J
T = −55°C
J
0.001
0
5
10 15
20 25
30 35 40 45
50
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (W)
G
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
T
= 25°C
J(initial)
10 ms
T
= 25°C
C
0.5 ms
1 ms
Single Pulse
≤ 10 V
V
GS
T
= 100°C
10
1
J(initial)
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
t , TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVBLS1D1N08H
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
TIME (s)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NVBLS1D1N08H
NVBLS
1D1N08H
M0−299A
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68x9.80
CASE 100CU
ISSUE C
DATE 22 MAY 2023
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
= Year
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H−PSOF8L 11.68x9.80
PAGE 1 OF 1
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