NVHL050N65S3HF [ONSEMI]
Power Mosfet - N‐Channel, SUPERFET III, FRFET 650 V, 58 A, 50 mΩ;
| 型号： | NVHL050N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | Power Mosfet - N‐Channel, SUPERFET III, FRFET 650 V, 58 A, 50 mΩ |
| 文件： | 总10页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power,
N‐Channel, SUPERFET III,
FRFET
650 V, 58 A, 50 mW
NVHL050N65S3HF
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
50 mW
58 A
D
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
G
Features
• 700 V @ T = 150°C
S
J
• Typ. R
= 41 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 119 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 1051 pF)
oss(eff.)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
G
D
Compliant
S
TO−247 long leads
Applications
CASE 340CX
• Automotive On Board Charger HEV−EV
• Automotive DC/DC Converter HEV−EV
MARKING DIAGRAM
$Y&Z&3&K
NVHL050
N65S3HF
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NVHL050N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2020 − Rev. 2
NVHL050N65S3HF/D
NVHL050N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
58
A
C
− Continuous (T = 100°C)
36
C
I
Drain Current
− Pulsed (Note 1)
145
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
830
AS
AS
I
7.5
E
4.03
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
403
W
W/°C
°C
D
C
− Derate Above 25°C
3.23
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 7.5 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 29 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.31
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
30 Units
NVHL050N65S3HF
NVHL050N65S3HF
TO−247
Tube
N/A
N/A
www.onsemi.com
2
NVHL050N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25_C
0.64
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 650 V, V = 0 V
−
−
−
−
22
−
10
−
mA
DSS
DS
GS
V
DS
= 520 V, T = 125_C
C
I
Gate to Body Leakage Current
V
GS
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 1.7 mA
3.0
−
−
5.0
50
−
V
mW
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
= 10 V, I = 29 A
41
27
GS
DS
D
g
FS
V
= 20 V, I = 29 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
−
−
−
−
−
−
4880
113
1051
200
119
36
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
V
= 400 V, V = 0 V, f = 1 MHz
GS
DS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
DS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
V
DS
= 400 V, I = 29 A, V = 10 V
D
GS
Q
gs
(Note 4)
Q
45
gd
ESR
f = 1 MHz
1.8
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
−
−
−
−
32
30
89
25
−
−
−
−
ns
ns
ns
ns
d(on)
V
= 400 V, I = 29 A,
D
t
r
DD
GS
V
= 10 V, R = 2.2 W
g
t
d(off)
(Note 4)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
−
−
−
−
−
−
58
145
1.3
A
A
V
S
I
SM
V
SD
V
GS
= 0 V, I = 29 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
−
−
128
606
−
−
ns
rr
V
GS
= 0 V, I = 29 A,
SD
F
dI /dt = 100 A/ms
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NVHL050N65S3HF
TYPICAL CHARACTERISTICS
200
100
200
V
GS
= 10 V
V
GS
= 10 V
8.0 V
250 ms Pulse Test
= 150°C
8.0 V
7.0 V
6.5 V
100
T
C
7.0 V
6.5 V
6.0 V
5.5 V
6.0 V
5.5 V
10
10
1
250 ms Pulse Test
= 25°C
T
C
1
0.2
2.0
, DRAIN−SOURCE VOLTAGE (V)
20
0.2
2.0
20
V
DS
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
200
100
80
60
250 ms Pulse Test
= 20 V
T
C
= 25°C
V
DS
T = 150°C
J
T = 25°C
J
V
= 10 V
= 20 V
GS
10
1
40
20
V
GS
T = −55°C
J
3
4
5
6
7
8
0
20
40
60
80 100 120 140 160 180
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
100K
10K
1K
1000
100
10
250 ms Pulse Test
= 0 V
V
GS
C
iss
T = 150°C
J
1
C
oss
f = 1 MHz
= 0 V
100
T = 25°C
J
V
GS
0.1
C
C
C
= C + C (C = shorted)
C
rss
iss
gs
gd
ds
10
1
0.01
= C + C
oss
rss
ds
gd
= C
gd
T = −55°C
J
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, BODY DIODE FORWARD VOLTAGE (V)
0.1
1
10
100
1000
V
SD
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
www.onsemi.com
4
NVHL050N65S3HF
TYPICAL CHARACTERISTICS
10
8
1.2
I
D
= 29 A
V
DD
= 130 V
V
= 0 V
= 10 mA
GS
I
D
1.1
1.0
V
DD
= 400 V
6
4
0.9
0.8
2
0
0
24
48
72
96
120
−75 −50 −25
0
25 50 75 100 125 150 175
Q , TOTAL GATE CHARGE (nC)
g
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
200
100
3.0
2.5
2.0
1.5
1.0
V
= 10 V
= 29 A
GS
I
D
100 ms
10
1 ms
10 ms
Operation in this Area
1
0.1
is Limited by R
DS(ON)
DC
T
= 25°C
C
0.5
0
T = 150°C
J
Single Pulse
0.01
−75 −50 −25
0
25 50
75 100 125 150 175
1
10
100
1K
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
70
60
50
40
30
20
30
24
18
12
6
0
10
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T , CASE TEMPERATURE (°C)
C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
www.onsemi.com
5
NVHL050N65S3HF
TYPICAL CHARACTERISTICS
250
200
150
1.2
1.0
0.8
V
= V
DS
= 1.7 mA
GS
I
D
T = 150°C
A
100
50
0
T = 25°C
A
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
= 29 A
I
D
0.6
−80
5
6
7
8
9
10
−40
0
40
80
120
160
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. RDS(ON) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
100
10
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1
1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00
t , TIME IN AVALANCHE (sec)
AV
Figure 15. Unclamped Inductive Switching
Capability
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
P
DM
Z
R
(t) = r(t) x R
q
JC
q
JC
0.01
0.01
= 0.31°C/W
q
JC
t
1
Peak T = PDM x Z (t) + T
Duty Cycle, D = t / t
q
J
JC
C
Single Pulse
t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 16. Transient Thermal Response Curve
www.onsemi.com
6
NVHL050N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= Const.
Figure 17. Gate Charge Test Circuit & Waveform
R
L
V
V
DS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
GS
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 18. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
7
NVHL050N65S3HF
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NVHL060N065SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L
ONSEMI
NVHL060N090SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−3L
ONSEMI
NVHL075N065SC1
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 57 mohm, 650 V, M2, TO247-3L
ONSEMI
NVHL080N120SC1A
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L
ONSEMI
NVHL082N65S3HF
Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247 fast recovery
ONSEMI
©2020 ICPDF网 联系我们和版权申明