NVHL060N090SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−3L;
| 型号： | NVHL060N090SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−3L |
| 文件： | 总8页 (文件大小：764K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 60 mohm, 900ꢀV,
M2, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
900 V
84 mW @ 15 V
46 A
N−CHANNEL MOSFET
NVHL060N090SC1
Features
D
• Typ. R
• Typ. R
= 60 mW @ V = 15 V
DS(on)
DS(on)
GS
= 43 mW @ V = 18 V
GS
G
• Ultra Low Gate Charge (typ. Q
= 87 nC)
G(tot)
• Low Effective Output Capacitance (typ. C = 113 pF)
oss
• 100% UIL Tested
S
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC−DC converter for EV/HEV
G
D
S
TO−247−3LD
CASE 340CX
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
900
Unit
V
MARKING DIAGRAM
V
DSS
Gate−to−Source Voltage
V
+22/−8
+15/−5
V
GS
Recommended Opera-
tion Values of Gate−to−
Source Voltage
V
GSop
V
T
C
< 175°C
$Y&Z&3&K
NVHL060
N090SC1
Continuous Drain
Current R
I
46
A
D
Steady
State
q
JC
T
= 25°C
C
Power Dissipation R
P
221
32
W
A
q
D
JC
JC
Continuous Drain
Current R
I
D
Steady
State
q
JC
T
C
= 100°C
Power Dissipation R
P
110
184
W
A
q
D
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
Pulsed Drain Current
(Note 2)
I
DM
T = 25°C
A
Single Pulse Surge Drain
Current Capability
(Note 3)
I
320
A
NVHL060N090SC1 = Specific Device Code
DSC
T = 25°C, t = 10 ms,
A
p
R
= 4.7 W
G
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Device
Package
Shipping
Source Current (Body Diode)
I
22
A
S
30 Units /
Tube
TO247−3L
NVHL060N090SC1
Single Pulse Drain−to−Source Avalanche
E
AS
162
mJ
Energy (I
= 18 A, L = 1 mH) (Note 4)
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2022 − Rev. 3
NVHL060N090SC1/D
NVHL060N090SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.68
40
Unit
°C/W
°C/W
Junction−to−Case (Note 1)
R
q
JC
Junction−to−Ambient (Note 1)
R
q
JA
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. Peak current might be limited by transconductance.
4. E of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A, V = 100 V, V = 15 V.
AS
J
AS
DD
GS
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
900
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I
D
= 1 mA, referenced to 25_C
574
mV/_C
(BR)DSS
Zero Gate Voltage Drain Current
I
mA
V
= 0 V, V = 900 V, T = 25_C
100
250
1
DSS
GS
DS
J
V
GS
= 0 V, V = 900 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V = +22/−8 V, V = 0 V
GS DS
mA
GSS
Gate Threshold Voltage
V
R
V
= V , I = 5 mA
1.8
2.7
4.3
+15
84
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
−5
mW
V
= 15 V, I = 20 A, T = 25_C
60
43
76
17
DS(on)
GS
D
J
V
GS
= 18 V, I = 20 A, T = 25_C
D
J
V
GS
= 15 V, I = 20 A, T = 175_C
135
D
J
Forward Transconductance
g
FS
V
= 20 V, I = 20 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
V
= 0 V, f = 1 MHz, V = 450 V
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
1770
113
11
GS
DS
ISS
C
OSS
C
RSS
V
= −5/15 V, V = 720 V, I = 10 A
nC
Q
87
GS
DS
D
G(tot)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
17
G(th)
Q
27
GS
GD
Q
26
R
f = 1 MHz
3.0
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
GS
I
= −5/15 V, V = 720 V,
ns
t
22
33
40
66
74
20
DS
d(on)
= 20 A, R = 2.5 W,
D
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
t
31
d(off)
t
f
11
mJ
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
464
23
ON
OFF
TOT
E
E
487
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V, T = 25_C
22
A
A
V
SD
GS
J
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
= −5 V, T = 25_C
184
SDM
GS
J
Forward Diode Voltage
V
V
GS
= −5 V, I = 10 A, T = 25_C
3.9
SD
SD
J
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2
NVHL060N090SC1
ELECTRICAL CHARACTERISTICS (continued)
Parameter Symbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Test Conditions
Min
Typ
Max
Unit
V
S
= −5/15 V, I = 30 A,
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
t
18
84
ns
nC
mJ
A
GS
RR
dI /dt = 1000 A/ms, V = 720 V
DS
Q
RR
E
REC
RRM
1.0
9.0
10
I
t
a
t
b
ns
ns
Discharge Time
8.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVHL060N090SC1
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVHL060N090SC1
TYPICAL CHARACTERISTICS (continued)
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVHL060N090SC1
TYPICAL CHARACTERISTICS (continued)
Figure 13. Junction−to−Ambient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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