NVHL065N65S3F [ONSEMI]
SUPERFET III MOSFET, 650V, 65mohm;
| 型号： | NVHL065N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | SUPERFET III MOSFET, 650V, 65mohm |
| 文件： | 总10页 (文件大小：826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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MOSFET – Single N-Channel,
SUPERFET) III, FRFET)
650 V, 46 A, 65 mW
NVHL065N65S3F
Features
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• Ultra Low Gate Charge & Low Effective Output Capacitance
• Lower FOM (R
x Q
& R
x E
)
DS(on) max.
g typ.
DS(on) max.
OSS
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
650 V
65 mW @ 10 V
46 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
D
Parameter
Drain−to−Source Voltage
Symbol
Value
650
30
Unit
V
V
DSS
V
GSS
V
GSS
Gate−to−Source Voltage
Gate−to−Source Voltage
− DC
V
G
− AC (f > 1 Hz)
30
V
Drain Current
− Continuous (T = 25°C)
I
D
I
D
46
A
C
Drain Current
− Continuous (T = 100°C)
30
A
S
C
POWER MOSFET
Drain Current
− Pulsed (Note 3)
I
115
337
2.7
A
DM
Power Dissipation
Power Dissipation
(T = 25°C)
C
P
P
W
D
− Derate Above 25°C
W/°C
°C
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
J
STG
Single Pulsed Avalanche Energy (Note 4)
Repetitive Avalanche Energy (Note 3)
MOSFET dv/dt
E
E
635
3.37
100
50
mJ
mJ
AS
AR
TO−247−3LD
CASE 340CH
dv/dt
dv/dt
V/ns
V/ns
°C
Peak Diode Recovery dv/dt (Note 5)
MARKING DIAGRAM
Max. Lead Temperature for Soldering Purposes
(1/8″ from case for 5 s)
T
300
L
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
$Y&Z&3&K
NVHL
065N65S3F
Thermal Resistance, Junction−to−Case,
R
0.37
°C/W
q
JC
Max. (Notes 1, 2)
Thermal Resistance, Junction−to−Ambient,
Max. (Notes 1, 2)
R
40
q
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
1. The entire application environment impacts the thermal resistance values shown.
They are not constants and are only valid for the particular conditions noted.
2. Assembled to an infinite heatsink with perfect heat transfer from the case
(assumes 0 K/W thermal interface).
NVHL065N65S3F = Specific Device Code
3. Repetitive rating: pulse−width limited by maximum junction temperature.
4. I = 9 A, R = 25 W, starting T = 25°C.
AS
G
J
5. I ≤ 32.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
ORDERING INFORMATION
Device
Package
Shipping
NVHL065N65S3F TO−247−4LD 30 Units / Tube
(Pb−Free)
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2020 − Rev. 0
NVHL065N65S3F/D
NVHL065N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
BV
BV
V
= 0 V, I = 1 mA, T = 25°C
650
700
V
V
DSS
GS
D
J
V
GS
= 0 V, I = 10 mA, T = 150°C
D J
DSS
Breakdown Voltage Temperature
Coefficient
DBV
/
I
= 15 mA, Referenced to 25_C
630
153
mV/_C
DSS
J
D
DT
Zero Gate Voltage Drain Current
I
mA
V
GS
= 0 V, V = 650 V
10
DSS
DS
V
= 520 V, T = 125_C
DS
C
Gate−to−Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
V
GS(th)
V
V
= V , I = 1.3 mA
3.0
5.0
65
V
mV/_C
mW
S
GS
DS
D
Threshold Temperature Coefficient
Static Drain−to−Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
DV
/DT
= V , I = 1.3 mA
−8.6
54
GS(th)
J
GS
DS
D
R
V
= 10 V, I = 23 A
D
DS(on)
GS
DS
g
FS
V
= 20 V, I = 23 A
31
D
pF
C
4075
95
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 400 V, f = 1 MHz
DS
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
C
11
rss
oss(eff.)
C
V
V
= 0 V to 400 V, V = 0 V
876
160
98
pF
pF
nC
DS
GS
C
Q
= 0 V to 400 V, V = 0 V
GS
oss(er.)
G(TOT)
DS
V
= 10 V, V = 400 V, I = 23 A
DS D
GS
Q
GS
Q
GD
30
(Note 6)
38
ESR
f = 1 MHz
1.5
W
t
t
34
31
78
16
ns
ns
ns
ns
d(on)
V
= 10 V, V = 400 V,
DD
Turn-On Rise Time
t
GS
D
r
I
= 23 A, R = 2.7 W
g
Turn-Off Delay Time
d(off)
(Note 6)
Turn-Off Fall Time
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
Maximum Continuous Source−to−
I
46
115
1.3
A
A
S
V
V
= 0 V
= 0 V
GS
Drain Diode Forward Current
Maximum Pulsed Source−to−Drain
Diode Forward Current
I
SM
GS
Source−to−Drain Diode Forward
Voltage
V
SD
V
V
GS
= 0 V, I = 23 A
SD
ns
Reverse Recovery Time
Charge Time
t
116
90
rr
t
a
b
V
GS
= 0 V, dI /dt = 100 A/ms,
F
I
= 23 A
SD
Discharge Time
t
24
Reverse Recovery Charge
Q
488
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Essentially independent of operating temperature typical characteristics.
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2
NVHL065N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS
200
100
300
Notes:
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1. V = 20 V
DS
2. 250 ms Pulse Test
100
10
1
10
1
5.5 V
150°C
25°C
Notes:
1. 250 ms Pulse Test
−55°C
2. T = 25°C
C
0.1
2
4
6
8
10
0.2
1
10
20
V
DS,
Drain−Source Voltage [V]
V
GS,
Gate−Source Voltage [V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
1000
100
10
Notes:
Note: T = 25°C
C
1. V = 0 V
GS
2. 250 ms Pulse Test
150°C
V
= 10 V
GS
1
25°C
V
GS
= 20 V
0.1
−55°C
0.01
0.001
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
I
D,
Drain Current [A]
V
SD,
Body Diode Forward Voltage [V]
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Drain Current and Gate Voltage
10
100000
10000
1000
100
Note: I = 23 A
D
C
iss
8
6
V
DS
= 130 V
V
DS
= 400 V
C
oss
Notes:
4
2
1. V = 0 V
2. f = 1 MHz
GS
10
c
c
c
= c + c (c = shorted)
gs gd ds
iss
C
rss
1
= c + c
oss
rss
ds
gd
= c
gd
0
0.1
0
20
40
60
80
100
0.1
1
10
100
1000
V
DS,
Drain−Source Voltage [V]
Q
g,
Total Gate Charge [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NVHL065N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
2.5
Notes:
Notes:
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 23 A
D
2. I = 15 mA
D
2.0
1.5
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
50
40
30
20
10
0
500
30 ms
100
10
1
100 ms
1 ms
10 ms
Operation in This Area
DC
is Limited by R
Notes:
DS(on)
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V , Drain−Source Voltage
DS
T , Case Temperature [5C]
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
25
20
15
10
5
0
0
130
260
390
520
650
V , Drain to Source Voltage
DS
Figure 11. Eoss vs. Drain to Source Voltage
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4
NVHL065N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
Notes:
(t) = r(t) × R
Z
q
q
JC
JC
R
q
= 0.37°C/W
JC
Peak T = P
Duty Cycle, D = t / t
× Z (t) + T
q
JC C
J
DM
SINGLE PULSE
1
2
0.001
−5
10
−4
10
−3
10
−2
10
−1
10
100
101
102
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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5
NVHL065N65S3F
Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NVHL065N65S3F
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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7
NVHL065N65S3F
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CH
ISSUE A
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8
NVHL065N65S3F
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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