NVLJWD040N06CLTAG [ONSEMI]
MOSFET – Power, Dual N-Channel 60 V, 38 mΩ, 18 A;型号: | NVLJWD040N06CLTAG |
厂家: | ONSEMI |
描述: | MOSFET – Power, Dual N-Channel 60 V, 38 mΩ, 18 A |
文件: | 总7页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Dual
N-Channel
60 V, 38 mW, 18 A
V
R
MAX
I
D
MAX
(BR)DSS
DS(on)
38 mW @ 10 V
50 mW @ 4.5 V
60 V
18 A
NVLJWD040N06CL
Features
D1
D2
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Wettable Flanks Product
DS(on)
G1
G2
S1
S2
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Dual N−Channel MOSFET
S1
G1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D2
MARKING
DIAGRAM
D1
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D2
V
DSS
D1
G2
Gate−to−Source Voltage
V
GS
20
V
S2
040N
Continuous Drain
Current R
T
= 25°C
I
18
A
ALYW
WDFNW6 (2.2x2.3)
CASE 515AS
C
D
q
JC
T
C
= 100°C
13
(Notes 1, 2, 3)
Steady
State
040N = Specific Device Code
Power Dissipation
T
C
= 25°C
P
24
12
W
A
D
A
L
= Assembly Location
= Wafer Lot
R
(Notes 1, 2)
q
JC
T
C
= 100°C
Y
W
= Year
= Work Week
Continuous Drain
Current R
T = 25°C
A
I
D
5.5
q
JA
T = 100°C
A
3.9
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
2.2
1.1
54
W
D
R
(Notes 1, 2)
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
20
27
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 0.9 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
6.3
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
69
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 2
NVLJWD040N06CL/D
NVLJWD040N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
25
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
mA
DSS
GS
DS
J
V
= 60 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 13 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.4
31
mV/°C
mW
GS(TH)
J
R
V
= 10 V
I
I
= 5 A
= 5 A
38
50
DS(on)
GS
GS
D
V
= 4.5 V
40
D
Forward Transconductance
g
FS
V
DS
= 10 V, I = 5 A
14
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
340
145
3
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
= 4.5 V, V = 48 V; I = 5 A
3
nC
nC
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
6
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
0.7
1.3
0.6
3
G(TH)
Q
V
= 10 V, V = 48 V; I = 5A
DS D
GS
GD
GP
GS
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
4.8
1.4
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
I
= 5 A, R = 6 W
G
Turn−Off Delay Time
t
12.1
1.8
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.88
0.77
20
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
11
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 5 A
Discharge Time
9
b
Reverse Recovery Charge
Q
10
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVLJWD040N06CL
TYPICAL CHARACTERISTICS
20
18
16
14
12
20
V
GS
= 4.0 V to 10 V
V
DS
= 6 V
18
16
14
12
10
8
3.5 V
3.0 V
10
8
T = 25°C
J
6
6
4
4
2
0
2
0
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
45
40
35
100
90
80
70
60
50
40
30
T = 25°C
J
T = 25°C
D
J
I
= 5 A
V
= 4.5 V
= 10 V
GS
V
GS
30
20
10
0
25
20
1
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100
10
2.0
1.5
V
I
= 10 V
= 5 A
GS
T = 175°C
D
J
T = 150°C
J
1
T = 125°C
J
0.1
0.01
T = 85°C
J
1.0
0.5
T = 25°C
J
0.001
0.0001
−50 −25
0
25
50
75
100 125 150 175
10 15 20 25 30 35 40
45 50 55 60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVLJWD040N06CL
TYPICAL CHARACTERISTICS
10
1000
100
V
DS
= 48 V
9
8
7
6
5
4
3
2
C
ISS
I
D
= 5 A
T = 25°C
J
C
OSS
Q
Q
GD
GS
10
1
V
= 0 V
GS
T = 25°C
J
C
RSS
1
0
f = 1 MHz
0
1
2
3
4
5
6
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
V
= 10 V
= 48 V
V
GS
= 0 V
GS
V
DS
I
D
= 5 A
T = 175°C
J
10
t
d(off)
T = 150°C
J
10
t
T = 125°C
J
d(on)
T = 25°C
J
t
f
t
T = −55°C
r
J
1
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
R
Limit
T
V
= 25°C
DS(on)
C
Thermal Limit
Package Limit
≤ 10 V
GS
Single Pulse
100
10
10 ms
1 ms
10 ms
0.5 ms
T (initial) = 25°C
J
T (initial) = 125°C
J
1
1
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVLJWD040N06CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
10
1
2%
1%
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Response Curve
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJWD040N06CLTWG
040N
WDFNW6
(Pb−Free, Wettable Flanks)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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5
NVLJWD040N06CL
PACKAGE DIMENSIONS
WDFNW6 2.2x2.3, 0.8P
CASE 515AS
ISSUE O
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6
NVLJWD040N06CL
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