NVMJD015N06CLTWG [ONSEMI]
Dual N−Channel Power MOSFET 60V, 35A, 15mΩ;
| 型号： | NVMJD015N06CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | Dual N−Channel Power MOSFET 60V, 35A, 15mΩ |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Dual
N-Channel
60 V, 14.4 mW, 35 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
14.4 mW @ 10 V
20.4 mW @ 4.5 V
60 V
35 A
NVMJD015N06CL
Features
• Small Footprint (5x6 mm) for Compact Design
Dual N−Channel
D1
D2
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
G1
G2
S1
S2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D1 D1 D2 D2
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
35
A
C
D
q
JC
015N06
CL
AWLYW
T
C
25
(Notes 1, 2, 3)
Steady
State
LFPAK8
CASE 760AF
Power Dissipation
T
C
P
37
W
A
D
R
(Notes 1, 2)
q
JC
T
C
= 100°C
18
1
Continuous Drain
Current R
T = 25°C
A
I
D
10.1
7.1
3.1
1.5
123
S1 G1 S2 G2
q
JA
015N06CL = Specific Device Code
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
A
WL
Y
= Assembly Location
= Wafer Lot
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
= Year
T = 100°C
A
W
= Work Week
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Source Current (Body Diode)
I
30.7
69
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, I
= 1.6 A)
J
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.06
49
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2022 − Rev. 2
NVMJD015N06CL/D
NVMJD015N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
28.3
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 60 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 25 mA
1.2
2.2
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−6.68
11.8
mV/°C
mW
GS(TH)
J
R
V
= 10 V
I
I
= 17 A
= 17 A
14.4
20.4
DS(on)
GS
D
V
GS
= 4.5 V
16.5
D
Forward Transconductance
g
FS
V
DS
= 5 V, I = 7.5 A
28.84
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
643
311
5.8
4.7
9.4
0.6
1.8
1.2
2.9
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 30 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 48 V; I = 17 A
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 48 V; I = 17 A
DS D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
GS
GD
GP
V
GS
= 4.5 V, V = 48 V; I = 17 A
DS D
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
9.1
36.1
12
ns
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 48 V,
DS
GS
D
I
= 17 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.9
0.8
24
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 17 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
12
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 17 A
Discharge Time
12.1
9.8
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMJD015N06CL
TYPICAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
50
V
GS
= 4.5 V to 10 V
V
DS
= 5 V
45
40
35
30
25
20
15
10
3.6 V
3.2 V
4.0 V
T = 25°C
J
2.8 V
5
0
5
0
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
30
25
20
15
10
80
70
60
50
40
30
20
T = 25°C
J
T = 25°C
D
J
I
= 17 A
V
= 4.5 V
= 10 V
GS
V
GS
5
0
10
0
1
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
2.5
2.0
1.5
1.0
V
= 10 V
= 17 A
GS
T = 175°C
J
I
D
T = 150°C
J
T = 125°C
J
1000
100
T = 85°C
J
T = 25°C
J
10
1
0.5
0
5
10
15
20
25
30
35
40
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMJD015N06CL
TYPICAL CHARACTERISTICS
10
9
10,000
1000
100
8
C
ISS
7
6
C
OSS
5
4
3
2
Q
Q
GS
GD
10
1
V
DS
= 48 V
C
RSS
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 17 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
100
10
V
= 0 V
GS
t
t
r
T = 175°C
J
T = 125°C
d(off)
d(on)
J
t
T = 25°C
J
1
t
f
1
V
V
I
= 4.5 V
= 48 V
= 17 A
GS
DS
T = −55°C
J
D
0.1
0.1
1
10
R , GATE RESISTANCE (W)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
T
V
= 25°C
C
≤ 10 V
GS
Single Pulse
100
10
T (initial) = 25°C
J
10 ms
T (initial) = 150°C
J
1
1
R
Limit
DS(on)
0.5 ms
Thermal Limit
Package Limit
1 ms
100
10 ms
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
(V)
1000
V
DS
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMJD015N06CL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJD015N06CLTWG
015N06CL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMJD015N06CL
PACKAGE DIMENSIONS
LFPAK8 5.15x6.15
CASE 760AF
ISSUE O
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