NVTYS025P04M8LTWG [ONSEMI]
MOSFET – Power, Single, P-Channel,;型号: | NVTYS025P04M8LTWG |
厂家: | ONSEMI |
描述: | MOSFET – Power, Single, P-Channel, |
文件: | 总7页 (文件大小:376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
P-Channel
-40 V, 25 mW, -32 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
25 mW @ −10 V
40 mW @ −4.5 V
−40 V
−32 A
NVTYS025P04M8L
P−Channel
D (5 − 8)
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
DS(on)
G (4)
• These Devices are Pb−Free and are RoHS Compliant
S (1, 2, 3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
LFPAK8
3.3x3.3
CASE 760AD
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
−32
−22.75
44.1
22
A
C
D
q
JC
T
C
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
−9.4
−6.7
3.8
q
JA
025P
04M8L
AWLYW
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
1.9
025P04M8L = Specific Device Code
= Assembly Location
WL = Wafer Lot
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
171
A
A
p
A
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Y
= Year
W
= Work Week
Source Current (Body Diode)
I
36.7
67.1
A
S
(Note: Microdot may be in either location)
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 3.7 A)
L(pk)
Lead Temperature for Soldering Purposes
T
260
°C
L
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
3.4
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2023 − Rev. 3
NVTYS025P04M8L/D
NVTYS025P04M8L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = −250 mA
−40
V
(BR)DSS
GS
D
I
T = 25°C
−10
−1000
100
mA
DSS
J
V
GS
= 0 V,
= −40 V
V
DS
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
GS
= V , I = −255 mA
−1.0
−3
25
40
V
GS(TH)
DS
D
Drain−to−Source On Resistance
R
V
= −10 V, I = −25 A
17.5
24.1
mW
DS(on)
GS
GS
D
V
= −4.5 V, I = −15 A
D
CHARGES AND CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1.0 MHz,
DS
1080
367
13
pF
iss
GS
V
= −25 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
16
nC
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
1
G(TH)
V
= −10 V, V = −20 V,
DS
GS
I
D
= −25 A
Q
3.4
1.6
GS
Q
GD
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
6
3
ns
d(on)
t
r
V
GS
= −10 V, V = −20 V,
DS
I
= −25 A
D
Turn−Off Delay Time
Fall Time
t
60
21
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
−0.95
−0.84
30
−1.2
V
SD
GS
J
I
= −25 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
15
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= −25 A
Discharge Time
15
b
Reverse Recovery Charge
Q
15
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS025P04M8L
TYPICAL CHARACTERISTICS
120
100
80
120
V
GS
= 10 V
V
DS
= −5 V
7.0 V
T = 25°C
J
6.0 V
5.5 V
5.0 V
4.5 V
80
4.0 V
3.6 V
60
40
20
0
40
0
3.2 V
2.8 V
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
1
2
3
4
5
6
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
40
35
30
25
T = 25°C
D
J
T = 25°C
J
V
GS
= −4.5 V
I
= −25 A
V
GS
= −10 V
20
15
20
15
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1.0
100
10
1
T = 175°C
J
V
= −10 V
= −25 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
0.8
0.6
V
GS
= 0 V
0.01
−100
−50
0
50
100
150
200
0
10
20
30
40
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTYS025P04M8L
TYPICAL CHARACTERISTICS
10K
1K
10
9
Q
G(TOT)
C
ISS
8
7
6
5
C
OSS
100
Q
Q
GD
GS
4
3
2
1
0
C
RSS
10
1
V
= −20 V
DS
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
I
D
= −25 A
f = 1 MHz
0
10
20
30
40
0
2
4
6
8
10
12
14
16
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
V
= 0 V
GS
V
V
= −10 V
= −20 V
= −25 A
100
10
GS
DS
I
D
t
t
d(off)
t
f
10
1
1
d(on)
T = 175°C
J
t
r
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
50
0.2
0.4
0.6
0.8
1.0
1.2
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
10 ms
100 ms
T
= 150°C
J(initial)
1
0.5 ms
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
0.1
0.1
0.00001
0.1
1
10
100
0.0001
, TIME IN AVALANCHE (mS)
AV
0.001
0.1
−V , DRAIN−TO−SOURCE VOLTAGE (V)
t
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS025P04M8L
TYPICAL CHARACTERISTICS
40
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTYS025P04M8LTWG
025P
04M8L
LFPAK33
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
DATE 16 NOV 2020
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
AWLYW
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05544H
LFPAK8 3.3x3.3, 0.65P
PAGE 1 OF 1
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