NVTYS027N10MCLTWG [ONSEMI]
MOSFET – Power, Single, N-Channel,;
| 型号： | NVTYS027N10MCLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, N-Channel, |
| 文件： | 总7页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
100 V
27 mW @ 10 V
29 A
32.8 mW @ 4.5 V
100 V, 27 mW, 29 A
NVTYS027N10MCL
N−Channel
D (5 − 8)
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
DS(on)
G (4)
• These Devices are Pb−Free and are RoHS Compliant
S (1, 2, 3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
V
GS
V
LFPAK8
3.3x3.3
CASE 760AD
Continuous Drain
Current R
Steady
T
T
T
T
= 25°C
= 100°C
= 25°C
= 100°C
I
29
A
C
C
C
C
D
State
q
JC
21
(Notes 1, 2, 3)
Power Dissipation
Steady
State
P
51
W
W
A
D
D
R
q
JC
(Notes 1, 2)
26
MARKING DIAGRAM
Continuous Drain
Current R
Steady T = 25°C
State
I
D
7
A
q
JA
027N
10MCL
AWLYW
T = 100°C
A
5
(Notes 1, 2, 3)
Power Dissipation
Steady T = 25°C
State
P
3.2
1.6
128
39.5
W
A
R
q
JA
(Notes 1, 2)
T = 100°C
A
027N10MCL = Specific Device Code
Pulsed Drain Current
T
C
= 25°C, t = 10 ms
I
DM
A
A
p
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Source Current (Body Diode)
I
S
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
W
= Work Week
Single Pulse Drain−to−Source Avalanche
E
174
260
mJ
AS
Energy (I
= 1.5 A)
L(pk)
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8″ from Case for 10 s)
T
°C
L
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
3
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
q
JC
°C/W
R
q
JA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2023 − Rev. 1
NVTYS027N10MCL/D
NVTYS027N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
−
−
−
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
−
73.2
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
1.0
250
100
mA
DSS
GS
DS
J
= 40 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= V , I = 45 mA
1.0
−
1.7
−6.23
19.1
26.9
18.3
3.0
−
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
mW
GS(TH)
R
V
GS
V
GS
V
DS
= 10 V
= 4.5 V
I
I
= 8 A
= 6 A
−
27
32.8
−
DS(on)
D
−
D
Forward Transconductance
g
= 5 V, I = 7 A
−
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
−
−
−
−
−
−
−
−
−
−
856
309
4.4
−
−
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Gate Resistance
R
f = 1 MHz
0.52
5.6
W
G
Total Gate Charge
Q
Q
V
GS
V
GS
V
GS
= 4.5 V, V = 80 V; I = 8 A
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
= 10 V, V = 80 V; I = 8 A
11.8
1.3
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
= 10 V, V = 80 V; I = 8 A
nC
G(TH)
DS
D
Q
2.2
GS
GD
GP
Q
V
1.4
2.8
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
V
= 4.5 V, V = 80 V, I = 6 A,
−
−
−
−
11.5
6.7
−
−
−
−
ns
d(ON)
GS
G
DS
D
R
= 6 W
t
r
Turn−Off Delay Time
Fall Time
t
14.2
6.5
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 8 A
T = 25°C
−
−
−
−
−
−
0.85
0.72
29.5
14.6
15.2
18.9
1.25
−
V
SD
GS
S
J
T = 125°C
J
Reverse Recovery Time
Charge Time
t
I = 8 A, di/dt = 100 A/ms
F
−
ns
ns
ns
nC
RR
t
t
−
a
Discharge Time
−
b
Reverse Recovery Charge
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS027N10MCL
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
40
VDS = 5 V
VGS = 4 V
VGS = 3.6 V
35
30
25
20
15
10
5
VGS = 4.5 V − 10 V
VGS = 3.2 V
VGS = 2.8 V
TJ = 25°C
TJ = −55°C
TJ = 125°C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
40
35
30
25
20
15
10
TJ = 25°C
ID = 8 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.1
100000
TJ = 175°C
TJ = 150°C
TJ = 125°C
VGS = 10 V
ID = 8 A
1.9
1.7
1.5
1.3
1.1
0.9
0.7
10000
1000
100
TJ = 85°C
TJ = 25°C
10
1
0.1
−50 −25
0
25
50
75 100 125 150 175
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
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3
NVTYS027N10MCL
TYPICAL CHARACTERISTICS
10
10000
1000
100
10
VDS = 80 V
ID = 8 A
TJ = 25°C
C
ISS
8
6
4
2
0
C
OSS
Q
Q
GD
GS
C
RSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0.1
0
2
4
6
8
10
12
0
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
1
50
VGS = 4.5 V
VDS = 80 V
ID = 6 A
VGS = 0 V
TJ = 125°C
td(off)
TJ = 150°C
td(on)
5
TJ = 175°C
TJ = 25°C
TJ = −55°C
tf
tr
0.5
0.3
1
10
100
0.5
V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.9
1.1
1.3
R , GATE RESISTANCE (W)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Resistive Switching Time Variation vs.
Gate Resistance
1000
100
10
100
VGS ≤ 10 V
SINGLE PULSE
Tc = 25°C
10
Tj (initial) = 25°C
Tj (initial) = 150°C
1
1
RDS(on) LIMIT
10 ms
THERMAL LIMIT
PACKAGE LIMIT
0.5 ms
1 ms
10 ms
0.1
0
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased Safe
Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS027N10MCL
TYPICAL CHARACTERISTICS
100
10
1
@ 50% Duty Cycle
@ 20% Duty Cycle
@ 10% Duty Cycle
@ 5% Duty Cycle
@ 2% Duty Cycle
@ 1% Duty Cycle
Single Pulse
0.1
0.01
0.000001 0.00001 0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Time (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
LFPAK8
Shipping
NVTYS027N10MCLTWG
027N
10MCL
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
DATE 16 NOV 2020
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
AWLYW
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05544H
LFPAK8 3.3x3.3, 0.65P
PAGE 1 OF 1
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