NXH800A100L4Q2F2P1G [ONSEMI]
IGBT Module, A-Type NPC 1000 V, 800 A IGBT;
| 型号： | NXH800A100L4Q2F2P1G |
| 厂家： | 
ONSEMI |
| 描述： | IGBT Module, A-Type NPC 1000 V, 800 A IGBT PC 双极性晶体管 |
| 文件： | 总30页 (文件大小：3056K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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PACKAGE PICTURE
Three Level ANPC Q2Pack
Module
NXH800A100L4Q2F2S1G/P1G,
NXH800A100L4Q2F2S2G/P2G
Q2PACK POSITIVE PRESS FIT PINS
CASE 180HG
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
• Extremely Efficient Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
• Low Package Height
• This is a Pb−Free Device
Q2PACK POSITIVE SOLDER PINS
CASE 180HH
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies Systems
Q2PACK NEGATIVE PRESS FIT PINS
CASE 180CQ
Q2PACK NEGATIVE SOLDER PINS
CASE 180BM
MARKING DIAGRAMS
See detailed marking diagrams on page 2 of this data sheet.
PIN CONNECTIONS
See detailed pin connections on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NXH800A100L4Q2F2/D
July, 2022 − Rev. 3
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
SCHEMATICS
Figure 1. NXH800A100L4Q2F2X1G
Figure 2. NXH800A100L4Q2F2X2G
Schematic Diagram
Schematic Diagram
MARKING DIAGRAMS
NXH800A100L4Q2F2X1G
ATYYWW
NXH800A100L4Q2F2X2G
ATYYWW
NXH800A100L4Q2F2
X
= Specific Device Code
= P or S
NXH800A100L4Q2F2
X
= Specific Device Code
= P or S
G
AT
YYWW
= Pb−Free Package
= Assembly & Test Site Code
= Year and Work Week Code
G
AT
YYWW
= Pb−Free Package
= Assembly & Test Site Code
= Year and Work Week Code
Figure 3. NXH800A100L4Q2F2X1G
Marking Diagram
Figure 4. NXH800A100L4Q2F2X2G
Marking Diagram
PIN CONNECTIONS
Phase
NTC1 NTC2
E2
T2C
G6
G2
E1 G1a G1b
T1E
E6
T6E
N
DC+
N
DC−
Figure 5. NXH800A100L4Q2F2X1G
Pin Connection
Figure 6. NXH800A100L4Q2F2X2G
Pin Connection
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2
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
OUTER IGBT (T1a, T1b, T4a, T4b)
Symbol
Value
Unit
Collector-Emitter Voltage
V
1000
V
V
CES
Gate-Emitter Voltage
Positive Transient Gate−Emitter Voltage (T
V
20
30
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
309
927
714
−40
175
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 175°C)
I
I
I
C
J
C(Pulse)
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature (Note 1)
INNER IGBT (T2, T3)
T
JMAX
Collector-Emitter Voltage
V
1000
V
V
CES
Gate-Emitter Voltage
V
GE
20
30
Positive Transient Gate−Emitter Voltage (T
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
C
413
1239
990
A
A
C
Pulsed Peak Collector Current @ T = 80°C (T = 175°C)
C
J
C(Pulse)
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
T
−40
175
JMIN
Maximum Operating Junction Temperature (Note 1)
NEUTRAL POINT IGBT (T5, T6)
Collector−Emitter Voltage
T
JMAX
V
1000
V
V
CES
Gate-Emitter Voltage
20
30
V
GE
Positive Transient Gate−Emitter Voltage (T
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
C
224
672
543
−40
175
A
A
C
Pulsed Peak Collector Current @ T = 80°C (T = 175°C)
C
J
C(Pulse)
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature (Note 1)
IGBT INVERSE DIODE (D1b, D2b, D3b, D4b, D5b, D6b)
Peak Repetitive Reverse Voltage
T
JMAX
V
1000
61
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
183
151
−40
175
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
DIODES (D1a, D2a, D3a, D4a)
T
JMIN
T
JMAX
Peak Repetitive Reverse Voltage
V
1000
177
531
446
−40
175
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
T
JMIN
T
JMAX
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (continued)
J
Rating
NEUTRAL POINT DIODES (D5a, D6a)
Peak Repetitive Reverse Voltage
Symbol
Value
Unit
V
RRM
1000
238
714
565
−40
175
V
A
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
tot
W
°C
°C
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
T
JMIN
T
JMAX
Table 2. THERMAL AND INSULATION PROPERTIES (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
THERMAL PROPERTIES
Operating Temperature under Switching Condition
Storage Temperature Range
T
−40 to +150
−40 to +125
°C
°C
VJOP
T
stg
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz
Creepage Distance
V
is
4000
12.7
V
RMS
mm
Comparative Tracking Index
CTI
> 600
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT (T1a, T1b, T4a, T4b) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
1.69
20
2.3
–
mA
GE
GE
GE
GE
GE
CE
Collector-Emitter Saturation Voltage
= 15 V, I = 400 A, T = 25°C
V
V
V
C
J
CE(sat)
= 15 V, I = 400 A, T = 175°C
–
1.95
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
Turn-on Delay Time
Rise Time
= V , I = 400 mA
3.4
–
4.92
6.7
2
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
–
mA
ns
CE
GES
T = 25°C
t
–
189.93
52.06
970.3
22.56
7.71
–
J
d(on)
V
V
= 600 V, I = 200 A
CE
GE
R
C
t
r
–
–
= −9 V, 15 V
= 23 W, R
= 15 W
Goff
Gon
Turn-off Delay Time
Fall Time
t
–
–
d(off)
(T1a, T1b tested together)
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
–
–
mJ
ns
on
off
E
–
8.12
–
T = 125°C
t
t
–
164.22
59.58
1088.34
33.6
–
J
d(on)
V
V
= 600 V, I = 200 A
CE
GE
R
C
t
r
–
–
= −9 V, 15 V
= 23 W, R
= 15 W
Goff
Gon
Turn-off Delay Time
Fall Time
–
–
d(off)
(T1a, T1b tested together)
t
f
–
–
Turn-on Switching Loss per Pulse
E
–
–
mJ
pF
11.57
on
off
Turn-off Switching Loss per Pulse
E
–
–
10.77
49700
1530
308
Input Capacitance
V
= 20 V, V = 0 V, f = 100 kHz
C
–
–
–
–
–
–
–
–
CE
GE
ies
(T1a, T1b tested together)
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
res
V
CE
V
GE
= 600 V, I = 300 A,
Q
g
3040
nC
C
= −15 V~15 V
(T1a, T1b tested together)
Thermal Resistance −
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
–
–
0.225
0.133
–
–
K/W
K/W
thJH
thJC
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
IGBT INVERSE DIODE (D1b, D2b, D3b, D4b, D5b, D6b) CHARACTERISTICS
Diode Forward Voltage
I = 100 A, T = 25°C
V
F
–
–
–
2.73
2.39
3.7
–
V
F
J
I = 100 A, T = 175°C
F
J
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.770
–
K/W
K/W
thJH
thJC
Thermal Resistance − Chip-to-Case
R
–
0.63
–
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT (T2, T3) CHARACTERISTICS
Collector-Emitter Cutoff Current
Collector-Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
20
2.3
–
mA
GE
GE
GE
GE
GE
CE
= 15 V, I = 600 A, T = 25°C
V
V
1.75
V
C
J
CE(sat)
= 15 V, I = 600 A, T = 175°C
–
2.15
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
Turn-on Delay Time
Rise Time
= V , I = 600 mA
3.4
–
4.83
6.7
2
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
–
mA
ns
CE
GES
T = 25°C
t
–
233.73
68
–
J
d(on)
V
V
= 600 V, I = 200 A
CE
GE
R
C
t
r
–
–
= −9 V, 15 V
= 11 W, R
= 23 W
Gon
Goff
Turn-off Delay Time
Fall Time
t
–
1364.18
79.12
7.83
–
d(off)
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
–
–
mJ
ns
on
off
E
–
16.73
213.78
75.99
1514.94
47.53
–
T = 125°C
t
t
–
–
J
d(on)
V
V
= 600 V, I = 200 A
CE
GE
R
C
t
r
–
–
= −9 V, 15 V
= 11 W, R
= 23 W
Gon
Goff
Turn-off Delay Time
Fall Time
–
–
d(off)
t
f
–
–
Turn-on Switching Loss per Pulse
E
E
–
–
mJ
pF
10.87
on
off
Turn-off Switching Loss per Pulse
–
–
17.39
38100
1230
226
Input Capacitance
V
= 20 V, V = 0 V, f = 100 kHz
C
–
–
–
–
–
–
–
–
CE
GE
ies
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
res
V
CE
V
GE
= 600 V, I = 300 A,
Q
g
2230
nC
C
= 15 V
Thermal Resistance −
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
–
–
0.168
0.096
–
–
K/W
K/W
thJH
thJC
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
DIODES (D1a, D2a, D3a, D4a) CHARACTERISTICS
Diode Forward Voltage
I = 300 A, T = 25°C
V
F
–
–
–
–
–
–
2.76
2.43
3.7
–
V
F
J
I = 300 A, T = 175°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
105.26
4.344
106.04
3.242
–
ns
mC
A
J
V
V
= 600 V, I = 200 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
RRM
–
= −9 V, 15 V, R = 11 W
G
I
–
Peak Rate of Fall of Recovery
Current
di/dt
–
A/ns
Reverse Recovery Energy
Reverse Recovery Time
E
–
–
–
–
–
1.304
176.9
–
–
–
–
–
mJ
ns
rr
T = 125°C
t
rr
J
V
V
= 600 V, I = 200 A
C
CE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
RRM
12.771
154.24
2.795
mC
A
= −9 V, 15 V, R = 11 W
GE
G
I
Peak Rate of Fall of Recovery
Current
di/dt
A/ns
Reverse Recovery Energy
E
–
–
4.318
0.315
–
–
mJ
rr
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.213
–
K/W
thJC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT (T5, T6) CHARACTERISTICS
Collector-Emitter Cutoff Current
Collector-Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
20
2.3
–
mA
GE
GE
GE
GE
GE
CE
= 15 V, I = 300 A, T = 25°C
V
V
1.70
2.05
5.03
–
V
C
J
CE(sat)
= 15 V, I = 300 A, T = 175°C
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
= V , I = 300 mA
4.1
–
6.0
2
V
CE
C
GE(TH)
=
20 V, V = 0 V
I
mA
ns
CE
GES
Turn-on Delay Time
T = 25°C
t
–
–
J
d(on)
120.19
50.18
682.65
39.56
8.58
V
V
= 600 V, I = 200 A
CE
GE
R
C
Rise Time
t
r
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
= −9 V, 15 V,
= 11 W, R
= 23 W
Gon
Goff
Turn-off Delay Time
Fall Time
t
d(off)
t
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
Rise Time
E
on
mJ
ns
E
off
7.82
T = 125°C
t
t
J
d(on)
112.48
57.46
747.87
23.765
13.77
V
V
= 600 V, I = 200 A
CE
GE
R
C
t
r
= −9 V, 15 V,
= 11 W, R
= 23 W
Gon
Goff
Turn-off Delay Time
Fall Time
d(off)
t
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
E
on
mJ
pF
E
off
10.41
17400
654
Input Capacitance
V
V
= 20 V, V = 0 V, f = 100 kHz
C
–
–
–
–
–
–
–
–
–
–
CE
GE
ies
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
101
res
= 600 V, I = 300 A, V = 15 V
Q
g
1004
0.264
nC
CE
C
GE
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.175
–
K/W
V
thJC
DIODES (D5a, D6a) CHARACTERISTICS
Diode Forward Voltage
I = 400 A, T = 25°C
F
V
F
–
–
–
–
–
–
2.83
2.42
3.7
–
J
I = 400 A, T = 175°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
92.74
5.66
–
ns
mC
A
J
V
V
= 600 V, I = 200 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
–
rr
RRM
= −9 V, 15 V, R = 15 W
G
I
136.18
3.14
–
Peak Rate of Fall of Recovery
Current
di/dt
–
A/ns
Reverse Recovery Energy
Reverse Recovery Time
E
–
–
–
–
–
2.03
159.63
17.00
223.97
2.71
–
–
–
–
–
mJ
ns
rr
T = 125°C
t
rr
J
V
V
= 600 V, I = 200 A
C
CE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
RRM
mC
A
= −9 V, 15 V, R = 15 W
GE
G
I
Peak Rate of Fall of Recovery
Current
di/dt
A/ns
Reverse Recovery Energy
E
–
–
6.80
–
–
mJ
rr
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.244
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.168
–
K/W
thJC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
R
–
–
22
1504
–
–
–
1
–
–
−
kW
W
25
T = 100°C
R
100
DR/R
−1
–
%
Power Dissipation
P
D
187.5
1.5
mW
mW/K
K
Power Dissipation Constant
B-value
–
B(25/100), tolerance 3%
–
3980
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping
NXH800A100L4Q2F2S1G
NXH800A100L4Q2F2S1G
Q2PACK − Case 180HH
(Pb−Free/Halide−Free)
12 Units / Blister Tray
NXH800A100L4Q2F2P1G
NXH800A100L4Q2F2S2G
NXH800A100L4Q2F2P2G
NXH800A100L4Q2F2P1G
NXH800A100L4Q2F2S2G
NXH800A100L4Q2F2P2G
Q2PACK − Case 180HG
(Pb−Free/Halide−Free)
12 Units / Blister Tray
12 Units / Blister Tray
12 Units / Blister Tray
Q2PACK − Case 180BM
(Pb−Free/Halide−Free)
Q2PACK − Case 180CQ
(Pb−Free/Halide−Free)
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − IGBT T1/T4 AND D5a/D6a DIODE
1000
800
1000
T = 25°C
J
T = 175°C
J
800
600
400
200
V
GE
= 21 V
600
400
200
V
GE
= 21 V
V
GE
= 7 V
V
= 7 V
GE
0
0
0
0.5
1.0
1.5
2.0
0.0
1.0
2.0
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Typical Output Characteristics
Figure 7. Typical Output Characteristics
1000
900
800
700
600
500
400
300
1000
900
800
700
600
500
400
300
V
GE
= 15 V
200
100
0
200
100
0
0
2
4
6
8
0
0.5
1.0
1.5
2.0
V
GE
, GATE−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Transfer Characteristics
Figure 10. Saturation Voltage Characteristics
1000
100
10
800
600
400
200
0
Single Nonrepetative
1
Pulse T = 25°C
C
V
GE
= +15 V −9V,
Curves must be derated
linearly with increase
in temperature
T = T
− 25°C
J
Jmax
R
= 25 W
goff
0.1
1.000
10.000
100.000
1000000
0
200
400
600
800
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 11. FBSOA
Figure 12. RBSOA
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − IGBT T1/T4 AND D5a/D6a DIODE (continued)
1000000
18
15
V
CE
= 600 V
100000
C
iss
12
9
10000
1000
100
10
6
3
C
oss
f = 100 kHz
= 0 V
V
GE
0
−3
−6
−9
−12
−15
C
rss
1
0.1
0
400 800 1200 1600 2000 2400 2800 3200
Charge (nC)
0.1
1
10
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Gate Voltage vs. Gate Charge
(T1a +T1b)
Figure 14. Capacitance (T1, T4)
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V , FORWARD VOLTAGE (V)
F
Figure 15. Diode Forward Characteristics
TYPICAL CHARACTERISTICS – IGBT T2/T3 AND D1a/D4a, D2a/D3a DIODE
1000
1000
800
T = 175°C
J
T = 25°C
J
800
V
GE
= 21 V
V
GE
= 21 V
600
400
200
600
400
200
V
GE
= 7 V
V
GE
= 7 V
0
0
0.0
1.0
2.0
3.0
0.0
1.0
2.0
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Typical Output Characteristics
Figure 17. Typical Output Characteristics
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS – IGBT T2/T3 AND D1a/D4a, D2a/D3a DIODE (continued)
1000
900
800
700
600
500
400
300
200
100
0
1000
V
GE
= 15 V
900
800
700
600
500
400
300
200
100
0
4
0
2
6
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE,
GATE−EMITTER VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Saturation Voltage Characteristic
800
600
1000
100
10
400
200
0
Single Nonrepetative
1
Pulse T = 25°C
V
GE
= +15 V −9V,
C
Curves must be derated
linearly with increase
in temperature
T = T
− 25°C
J
Jmax
R
= 25 W
goff
0.1
1.000
10.000
100.000
1000.000
0
200
400
600
800
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 20. FBSOA
Figure 21. RBSOA
15
12
9
1000000
100000
V
CE
= 600 V
C
iss
10000
1000
100
10
6
3
C
oss
f = 100 kHz
= 0 V
0
V
GE
−3
−6
−9
−12
−15
C
rss
1
0.1
0
400
800
1200
1600
2000
2400
0.1
1
10
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Charge (nC)
Figure 22. Gate Voltage vs. Gate Charge
Figure 23. Capacitance
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS – IGBT T2/T3 AND D1a/D4a, D2a/D3a DIODE (continued)
200
180
160
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V , FORWARD VOLTAGE (V)
F
Figure 24. Diode Forward Characteristics
TYPICAL CHARACTERISTICS – IGBT T5/T6 AND D1b/D2b/D6b, D3b/D4b/D5b DIODE (continued)
800
1000
800
T = 175°C
J
T = 25°C
J
600
400
200
600
400
200
V
GE
= 21 V
V
GE
= 21 V
V
GE
= 7 V
V
GE
= 7 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
1.0
2.0
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 25. Typical Output Characteristics
Figure 26. Typical Output Characteristics
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS – IGBT T5/T6 AND D1b/D2b/D6b, D3b/D4b/D5b DIODE (continued)
800
V
GE
= 15 V
500
400
700
600
500
400
300
200
300
200
100
100
0
0
4
0
2
6
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE,
GATE−EMITTER VOLTAGE (V)
Figure 27. Transfer Characteristics
Figure 28. Saturation Voltage Characteristic
1000
100
10
600
400
200
0
Single Nonrepetative
1
Pulse T = 25°C
C
V
= +15 V, −9V,
GE
Curves must be derated
linearly with increase
in temperature
T = T
− 25°C
J
Jmax
R
goff
= 25 W
0.1
1.000
10.000
100.000
1000.000
0
200
400
600
800
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 29. FBSOA
Figure 30. RBSOA
15
12
9
1000000
100000
V
CE
= 600 V
C
iss
6
10000
1000
100
10
3
C
oss
f = 100 kHz
= 0 V
0
V
GE
−3
−6
−9
−12
−15
C
rss
1
0.1
0
200
400
600
800
1000
0.1
1
10
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Charge (nC)
Figure 31. Gate Voltage vs. Gate Charge
Figure 32. Capacitance
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS – IGBT T5/T6 AND D1b/D2b/D6b, D3b/D4b/D5b DIODE (continued)
1000000
180
160
140
100000
10000
1000
120
100
80
60
40
20
100
−50 −25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100 125 150
V , FORWARD VOLTAGE (V)
F
TEMPERATURE (°C)
Figure 33. Diode Forward Characteristics
Figure 34. Temperature vs. NTC Value
TYPICAL CHARACTERISTICS − IGBT AND DIODE
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 35. Transient Thermal Impedance (T1a, T1b, T4a, T4b)
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − IGBT AND DIODE (continued)
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 36. Transient Thermal Impedance (T2, T3)
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 37. Transient Thermal Impedance (T5, T6)
1
0.1
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 38. Transient Thermal Impedance (D1b, D2b, D3b, D4b, D5b, D6b)
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − IGBT AND DIODE (continued)
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 39. Transient Thermal Impedance (D1a, D2a, D3a, D4a)
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 40. Transient Thermal Impedance (D5a, D6a)
TYPICAL CHARACTERISTICS – T1øD5a or T4øD6a
30
25
20
15
10
5
25
20
15
10
5
0
0
0
50 100 150 200 250 300 350 400 450 500
0
50 100 150 200 250 300 350 400 450 500
I , (A)
C
I , (A)
C
Figure 41. Typical Turn On Loss vs. IC
Figure 42. Typical Turn Off Loss vs. IC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T1øD5a or T4øD6a (continued)
20
18
16
14
12
10
8
15
12
9
6
15
6
20
25
30
35
15
20
25
(W)
30
35
R
(W)
R
G
G
Figure 44. Typical Turn Off Loss vs. RG
Figure 43. Typical Turn On Loss vs. RG
1400
1200
1000
800
220
200
180
160
140
120
100
80
600
400
60
40
20
200
0
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 45. Typical Turn−Off Switching Time vs. IC
Figure 46. Typical Turn−On Switching Time vs. IC
1600
400
1400
1200
1000
800
350
300
250
200
150
100
50
600
400
200
0
0
15
20
25
30
35
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 47. Typical Turn−Off Switching Time vs. RG
Figure 48. Typical Turn−On Switching Time vs. RG
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T1øD5a or T4øD6a (continued)
10
8
8
6
4
2
0
6
4
2
0
0
100
200
300
400
500
15
20
25
(W)
30
35
I
C
(A)
R
G
Figure 50. Typical Reverse Recovery Energy Loss vs. RG
Figure 49. Typical Reverse Recovery Energy Loss vs. IC
210
25
20
15
10
5
180
150
120
90
60
0
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 51. Typical Reverse Recovery Time vs. IC
Figure 52. Typical Reverse Recovery Charge vs. IC
280
6
5
4
3
240
200
160
120
2
1
0
80
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 53. Typical Reverse Recovery Current vs. IC
Figure 54. Typical di/dt vs. IC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T1øD5a or T4øD6a (continued)
18
230
210
190
170
150
130
110
16
14
12
10
8
90
70
50
6
4
15
20
25
30
35
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 55. Typical Reverse Recovery Time vs. RG
Figure 56. Typical Reverse Recovery Charge vs. RG
250
3.3
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
200
150
100
50
15
20
25
30
35
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 57. Typical Reverse Recovery Peak Current vs. RG
Figure 58. Typical di/dt vs. RG
TYPICAL CHARACTERISTICS – T2øD3a + D4a or T3øD1a + D2a
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
100
200
I , (A)
300
400
500
0
100
200
I , (A)
300
400
500
C
C
Figure 59. Typical Turn On Loss vs. IC
Figure 60. Typical Turn Off Loss vs. IC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS – T2øD3a + D4a or T3øD1a + D2a (continued)
30
25
20
15
10
20
18
16
14
12
5
10
10
15
20
25
30
35
10
15
20
25
30
35
R
(W)
R (W)
G
G
Figure 62. Typical Turn Off Loss vs. RG
Figure 61. Typical Turn On Loss vs. RG
300
250
200
150
1600
1400
1200
1000
800
600
100
50
0
400
200
0
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 63. Typical Turn−Off Switching Time vs. IC
Figure 64. Typical Turn−On Switching Time vs. IC
600
2000
500
1600
1200
400
300
200
100
800
400
0
0
10
15
20
25
30
35
10
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 65. Typical Turn−Off Switching Time vs. RG
Figure 66. Typical Turn−On Switching Time vs. RG
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T2øD3a + D4a or T3øD1a + D2a (continued)
3
2.5
2
3
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
0
100
200
300
400
500
10
15
20
25
30
35
I
C
(A)
R (W)
G
Figure 68. Typical Reverse Recovery Energy Loss vs. RG
Figure 67. Typical Reverse Recovery Energy Loss vs. IC
200
8
7
6
160
120
80
5
4
3
2
1
0
40
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 69. Typical Reverse Recovery Time vs. IC
Figure 70. Typical Reverse Recovery Charge vs. IC
150
4
3.5
3
120
90
2.5
2
60
1.5
1
30
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 71. Typical Reverse Recovery Current vs. IC
Figure 72. Typical di/dt vs. IC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T2øD3a + D4a or T3øD1a + D2a (continued)
350
300
250
200
150
100
50
8
6
4
2
0
0
10
15
20
25
30
35
10
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 73. Typical Reverse Recovery Time vs. RG
Figure 74. Typical Reverse Recovery Charge vs. RG
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
120
100
80
60
40
20
10
15
20
25
30
35
10
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 75. Typical Reverse Recovery Peak Current vs. RG
Figure 76. Typical di/dt vs. RG
TYPICAL CHARACTERISTICS – T6øD4a or T5øD1a
30
30
25
20
15
10
5
25
20
15
10
5
0
0
0
100
200
I , (A)
300
400
500
0
100
200
I , (A)
300
400
500
C
C
Figure 77. Typical Turn On Loss vs. IC
Figure 78. Typical Turn Off Loss vs. IC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS – T6øD4a or T5øD1a (continued)
25
20
15
10
14
11
8
5
5
10
15
20
25
30
35
10
15
20
25
30
35
R
(W)
R (W)
G
G
Figure 80. Typical Turn Off Loss vs. RG
Figure 79. Typical Turn On Loss vs. RG
800
600
400
200
150
120
90
60
30
0
0
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 81. Typical Turn−Off Switching Time vs. IC
Figure 82. Typical Turn−On Switching Time vs. IC
300
1000
250
800
600
200
150
100
50
400
200
0
0
10
15
20
25
30
35
10
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 83. Typical Turn−Off Switching Time vs. RG
Figure 84. Typical Turn−On Switching Time vs. RG
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T6øD4a or T5øD1a (continued)
6
5
4
3
2
1
0
5
4
3
2
1
0
0
100
200
300
400
500
10
15
20
25
30
35
I
C
(A)
R (W)
G
Figure 86. Typical Reverse Recovery Energy Loss vs. RG
Figure 85. Typical Reverse Recovery Energy Loss vs. IC
240
18
16
14
12
200
160
120
80
10
8
6
4
2
40
0
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 87. Typical Reverse Recovery Time vs. IC
Figure 88. Typical Reverse Recovery Charge vs. IC
210
5
4,5
180
150
120
90
4
3.5
3
2.5
2
1.5
1
60
0
100
200
300
400
500
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 89. Typical Reverse Recovery Current vs. IC
Figure 90. Typical di/dt vs. IC
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NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
TYPICAL CHARACTERISTICS − T6øD4a or T5øD1a (continued)
15
240
220
200
180
12
9
160
140
120
100
6
3
0
10
15
20
25
30
35
10
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 91. Typical Reverse Recovery Time vs. RG
Figure 92. Typical Reverse Recovery Charge vs. RG
160
3.5
3
2.5
2
140
120
100
80
1.5
1
60
10
15
20
25
30
35
10
15
20
25
30
35
R , GATE RESISTOR (W)
G
R , GATE RESISTOR (W)
G
Figure 93. Typical Reverse Recovery Peak Current vs. RG
Figure 94. Typical di/dt vs. RG
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25
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
PIM51, 93x47 (PRESS FIT)
CASE 180HG
ISSUE O
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26
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
PIM51, 93x47 (SOLDER PIN)
CASE 180HH
ISSUE O
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27
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
PIM51, 93x47 (PRESS FIT)
CASE 180CQ
ISSUE O
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28
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
PIM51, 93x47 (SOLDER PIN)
CASE 180BM
ISSUE O
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29
NXH800A100L4Q2F2S1G/P1G, NXH800A100L4Q2F2S2G/P2G
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