NXH80B120H2Q0SG [ONSEMI]
Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode;
| 型号： | NXH80B120H2Q0SG |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode 双极性晶体管 |
| 文件： | 总12页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, Dual Boost,
1200ꢀV, 40 A IGBT ꢀ 1200 V,
15 A SiC Diode, Q0 Package
NXH80B120H2Q0
The NXH80B120H2Q0 is a high−density, integrated power module
combines high−performance IGBTs with rugged anti−parallel diodes
including on−board thermistor.
Q0BOOST
CASE 180AJ
Features
MARKING DIAGRAM
• Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
• 1200 V FSII IGBT V
= 2.2 V
CE(SAT)
NXH80B120H2Q0Sxx
ATYYWW
• 1200 V SiC Diode V = 1.4 V
F
• Low Inductive Layout
• Solderable Pins
NXH80B120H2Q0Sxx = Device Code
AT = Assembly & Test Site Code
YYWW = Year and Work Week Code
• Thermistor
• Bare Copper and Nickel−Plated DBC Options
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
• Energy Storage Systems
PIN CONNECTIONS
5,6,15,16
D6
D5
Bypass Diode
Bypass Diode
7, 8
13,14
11,12
D3
D4
Boost Diode
Boost Diode
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
9,10
D1
D2
IGBT
T2
T1
IGBT
Boost IGBT 2
Boost IGBT 1
Protection Protection
Diode Diode
20
1
19
22
2
21
3,4
17,18
NTC
Thermistor
Figure 1. NXH80B120H2Q0SG Schematic Diagram
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2023 − Rev. 4
NXH80B120H2Q0/D
NXH80B120H2Q0
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
Symbol
Value
Unit
BOOST IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
41
A
h
J
Pulsed Collector Current (T = 175°C)
I
123
103
5
A
J
Cpulse
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
W
ms
°C
°C
h
J
Short Circuit Withstand Time @ V = 15 V, V = 600 V, T ≤ 150°C
T
sc
GE
CE
J
Minimum Operating Junction Temperature
T
−40
150
JMIN
Maximum Operating Junction Temperature
BOOST DIODE
T
JMAX
Peak Repetitive Reverse Voltage
V
1200
28
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (limited by T , duty cycle = 10%)
I
75
A
J
FRM
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
tot
79
W
A
h
J
Surge Forward Current (60 Hz single half−sine wave) (T = 25°C)
I
69
J
FSM
2
2
2
I t − value (60 Hz single half−sine wave) (T = 150°C)
I t
19
A s
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BYPASS DIODE / IGBT PROTECTION DIODE
Peak Repetitive Reverse Voltage
T
−40
150
°C
°C
JMIN
T
JMAX
V
1600
46
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
h
J
Repetitive Peak Forward Current (T = 175°C, t limited by T
)
I
FRM
130
66
A
J
p
Jmax
Power Dissipation Per Diode @ T = 80°C (T = 175°C)
P
tot
W
°C
°C
h
J
Minimum Operating Junction Temperature
T
JMIN
−40
150
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
Storage Temperature range
T
stg
−40 to 125
°C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
−25)
jmax
Unit
Module Operating Junction Temperature
T
−40
(T
°C
J
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH80B120H2Q0
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
= 0 V, V = 1200 V
I
CES
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
200
2.5
–
mA
GE
CE
V
= 15 V, I = 40 A, T = 25°C
V
V
2.20
2.16
5.45
−
V
GE
C
J
CE(sat)
V
= 15 V, I = 40 A, T = 150°C
C J
GE
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 1.5 mA
6.4
200
–
V
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
nA
ns
GE
CE
T = 25°C
t
27
J
d(on)
V
V
= 700 V, I = 40 A
CE
GE
C
Rise Time
t
19
–
r
= 15 V, R = 4 W
G
Turn−off Delay Time
t
94
–
d(off)
Fall Time
t
78
–
f
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
540
1640
27
–
mJ
–
T = 125°C
t
–
ns
J
d(on)
V
V
= 700 V, I = 40 A
CE
GE
C
Rise Time
t
20
–
r
=
15 V, R = 4 W
G
Turn−off Delay Time
t
110
189
620
3590
9700
200
170
400
0.92
–
d(off)
Fall Time
t
–
f
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
mJ
–
V
= 25 V, V = 0 V, f = 10 kHz
C
–
pF
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
V
= 600 V, I = 40 A, V = 15 V
Q
g
–
nC
CE
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
BOOST DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
−
300
1.7
–
mA
R
R
I
= 15 A, T = 25°C
V
1.42
1.95
27
V
F
J
F
I
= 15 A, T = 150°C
J
F
Reverse Recovery Time
T = 25°C
= 700 V, I = 40 A
=
t
–
ns
nC
A
J
rr
V
CE
V
GE
C
Reverse Recovery Charge
Q
280
16
–
rr
15 V, R = 4 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
RRM
di/dt
1080
130
28
–
A/ms
mJ
E
–
rr
Reverse Recovery Time
T = 125°C
= 700 V, I = 40 A
=
t
–
ns
J
rr
V
CE
V
GE
C
Reverse Recovery Charge
Q
rr
RRM
250
15
–
nC
A
15 V, R = 4 W
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
di/dt
940
110
1.21
–
A/ms
mJ
E
–
rr
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Diode Reverse Leakage Current
V
= 1600 V, T = 25°C
I
R
–
−
100
mA
R
J
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3
NXH80B120H2Q0
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
V
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Diode Forward Voltage
I
= 25 A, T = 25°C
V
F
–
−
–
1.0
1.4
−
F
J
I
= 25 A, T = 150°C
0.90
1.44
F
J
Thermal Resistance − chip−to−heatsink
Thermal grease, Thickness < 100 mm,
l = 0.84 W/mK
R
–
°C/W
thJH
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
R
−
−
22
1486
−
−
−
5
−
−
−
−
kW
W
25
T = 100°C
R
100
DR/R
−5
−
%
Power dissipation
Power dissipation constant
B−value
P
200
2
mW
mW/K
K
D
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
−
3950
3998
B−value
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH80B120H2Q0SG
NXH80B120H2Q0SG
Q0BOOST − Case 180AJ
Bare Copper DBC, Solder Pins
(Pb−Free and Halide−Free)
24 Units / Blister Tray
NXH80B120H2Q0SNG
NXH80B120H2Q0SNG
Q0BOOST − Case 180AJ
Nickel−Plated DBC, Solder Pins
(Pb−Free and Halide−Free)
24 Units / Blister Tray
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4
NXH80B120H2Q0
TYPICAL CHARACTERISTICS − BOOST IGBT & BOOST DIODE
150
120
90
150
17 V to 12 V
T = 25°C
17 V to 12 V
11 V
11 V
J
120 T = 150°C
J
10 V
9 V
10 V
9 V
90
60
60
8 V
7 V
30
0
30
0
8 V
7 V
0
0
0
2
4
6
8
10
12
80
0
0
0
1
2
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. IGBT Typical Output Characteristics
Figure 2. IGBT Typical Output Characteristics
18
150
120
90
T = 25°C
J
15
12
9
T = 150°C
J
60
6
T = 150°C
J
30
0
3
0
T = 25°C
J
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 3. IGBT Typical Transfer
Characteristics
Figure 4. Diode Forward Characteristic
1615
1415
1215
1015
815
7015
6015
5015
4015
3015
2015
V
V
R
= 15 V
V
V
R
=
15 V
GE
GE
125°C
125°C
25°C
= 700 V
= 700 V
= 4 W
CE
CE
= 4 W
G
G
25°C
615
415
1015
15
215
15
10
20
30
40
50
60
70
10
20
30
40
50
60
70
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Turn On Loss vs. IC
Figure 6. Typical Turn Off Loss vs. IC
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NXH80B120H2Q0
TYPICAL CHARACTERISTICS − BOOST IGBT & BOOST DIODE
240
210
180
150
120
90
40
35
t @ 125°C
f
T @ 25°C
d(on)
T
d(on)
@ 125°C
30
25
20
15
10
T
@ 125°C
d(off)
t @ 125°C
r
t @ 25°C
r
T
@ 25°C
d(off)
60
V
V
R
= 15 V
V
V
R
= 15 V
GE
GE
= 700 V
= 700 V
t @ 25°C
f
30
0
CE
CE
5
0
= 4 W
= 4 W
G
G
0
0
0
10
20
30
40
50
60
70
80
80
80
0
0
0
10
20
30
40
50
60
70
80
80
80
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (A)
C
C
Figure 7. Typical Switching Times vs. IC
Figure 8. Typical Switching Times vs. IC
45
40
35
30
25
20
15
10
400
350
300
250
200
125°C
25°C
25°C
125°C
V
V
= 15 V
= 700 V
= 4 W
GE
V
V
= 15 V
= 700 V
= 4 W
GE
150
100
CE
CE
5
0
R
G
R
G
10
20
30
40
50
60
70
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 9. Typical Reverse Recovery Time vs.
IC
Figure 10. Typical Reverse Recovery Charge
vs. IC
20
18
16
14
12
1400
1200
1000
800
25°C
25°C
125°C
125°C
600
400
V
V
= 15 V
= 700 V
GE
V
V
R
= 15 V
= 700 V
= 4 W
GE
10
8
CE
200
0
CE
R
= 4 W
G
G
10
20
30
40
50
60
70
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Typical Reverse Recovery Peak
Current vs. IC
Figure 12. Typical Diode Current Slope vs. IC
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NXH80B120H2Q0
TYPICAL CHARACTERISTICS − BOOST IGBT & BOOST DIODE
180
160
140
120
100
80
16
V
= 600 V
= 40 A
CE
14
12
10
8
I
C
25°C
125°C
6
60
V
V
R
=
15 V
4
GE
40
= 700 V
= 4 W
CE
2
0
20
0
G
0
10
20
30
40
50
60
70
80
0
100
200
300
400
500
I , COLLECTOR CURRENT (A)
C
Q , GATE CHARGE (nC)
G
Figure 13. Typical Reverse Recovery Energy
vs. IC
Figure 14. Gate Voltage vs. Gate Charge
10
1
DUT = 50%
30%
0.1
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.0001
1.0E−06
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 15. IGBT Transient Thermal Impedance
10
DUT = 50%
30%
1
0.1
10%
5%
2%
1%
0.01
0.001
Single Pulse
1.0E−06 1.0E−05
0.0001
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 16. Diode Transient Thermal Impedance Boost Diode
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NXH80B120H2Q0
TYPICAL CHARACTERISTICS − BOOST IGBT & BOOST DIODE
1K
100
10
140
Single Nonrepetitive
Pulse T = 25°C
120
C
I
C
Chip
100
80
I
C
Module
50 ms
100 ms
60
1 ms
DC
40
1
Curves must be derated
linearly with increase in
temperature
V
=
15 V
− 25°C
Jmax
GE
20
0
T = T
J
0.1
1
10
100
1K
10K
0
200
400
600
800
1000 1200 1400
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. T1 & T2 FBSOA
Figure 18. T1 & T2 RBSOA
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NXH80B120H2Q0
TYPICAL CHARACTERISTICS − IGBT PROTECTION DIODE AND BYPASS DIODE
100
150°C
25°C
80
60
40
20
0
0
0.3
0.6
0.9
1.2
1.5
V , FORWARD VOLTAGE (V)
F
Figure 19. Diode Forward Characteristic
10
1
DUT = 50%
30%
10%
5%
0.1
2%
1%
0.01
0.001
Single Pulse
1.0E−06 1.0E−05
0.0001
1.0E−04
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
ON−PULSE WIDTH (s)
Figure 20. Diode Transient Thermal Impedance Bypass Diode / IGBT Protection Diode
TYPICAL CHARACTERISTICS − THERMISTOR
24K
20K
16K
12K
8K
4K
0
25
45
65
85
105
125
TEMPERATURE (°C)
Figure 21. Thermistor Characteristic
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 1 OF 2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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相关型号：
NXH80B120MNQ0SNG
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