PCFFS40120AF [ONSEMI]
SiC 二极管,1200V,40A,裸片;型号: | PCFFS40120AF |
厂家: | ONSEMI |
描述: | SiC 二极管,1200V,40A,裸片 二极管 |
文件: | 总7页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
40 A, 1200 V, D1, Die
Anode
PCFFS40120AF
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature dependent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operation frequency, increased power density, reduced EMI, and
reduced system size and cost.
DIE LAYOUT
(Dimension: mm, Except Scribe Lane)
4120
Features
Max Junction Temperature 175C
Avalanche Rated 420 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
Passivation Information
Passivation Material: Polymide (PSPI)
Passivation Type: Local Passivation
Passivation Thickness: 90KA
Die Information
Wafer Diameter: 6 inch
CROSS SECTION
Die Size: 4,200 4,200 mm (include Scribe Lane)
Metallization:
Top Ti/TiN/AlCu 4 mm
Back Ti/NiV/Ag
Die Thickness: Typ. 200 mm
Bonding Pad Size
Anode 3,620 3,620 mm
Recommended Wire Bond (Note 1)
Anode: 20 mil 3
NOTE:
1. Based on TO−247 package of onsemi.
ORDERING INFORMATION
Part Number
Die Size
Package
4,200 x 4,200 mm
(Include Scribe Lane)
N/A
PCFFS40120AF
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2023 − Rev. 2
PCFFS40120AF/D
PCFFS40120AF
ELECTRICAL CHARACTERISTICS ON WAFER (T = 25C unless otherwise noted) (Note 2)
C
Symbol
Parameter
Reverse Blocking Voltage
Forward Voltage
Test Condition
I = 200 mA, T = 25C
R
Min
1200
1.20
−
Typ
−
Max
−
Unit
V
V
R
C
V
F
I = 40 A, T = 25C
−
1.75
200
V
F
C
I
R
Reverse Current
V
R
= 1200 V, T = 25C
−
mA
C
2. Tested 100% on wafer.
The Configuration of Chips (Based on 6, Wafer)
Chip
Chip
Scribe Lane
Chip
80 mm
PSPI Passivation Line
Chip
Figure 1. Saw-on-film Frame Packing Based on Tested Wafer
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2
PCFFS40120AF
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Value
1200
420
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
E
AS
(Note 3)
mJ
A
I
F
Continuous Rectified Forward Current @ T < 155C
40
C
Continuous Rectified Forward Current @ T < 135C
61
C
I
Non-Repetitive Peak Forward Surge Current
1650
1550
270
A
A
T
T
= 25C, 10 ms
= 150C, 10 ms
F, Max
C
C
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
120
A
F,RM
p
Ptot
T
= 25C
682
W
C
C
T
= 150C
114
W
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
C
Ncm
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. E of 420 mJ is based on starting T = 25C, L = 0.5 mH, I = 41 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.22
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 40 A, T = 25C
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
V
F
C
I = 40 A, T = 125C
−
F
C
I = 40 A, T = 175C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25C
−
mA
C
= 1200 V, T = 125C
−
−
C
= 1200 V, T = 175C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
220
2250
204
169
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
PCFFS40120AF
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
10−5
40
30
20
10
0
TJ = −55oC
J = 25 o
J = 75 o
T
C
10−6
T
C
TJ = 175 o
J = 125 o
C
o
C
T
= 175
= 125
J
T
C
o
= 75 C
T
J
10−7
10−8
10−9
o
= 25 C
T
J
o
C
T
J
o
= −55 C
T
J
0.0
0.5
1.0
1.5
2.0
2.5
0
200
400
600
800 1000 1200
, REVERSE VOLTAGE (V)
VR
V , FORWARD VOLTAGE (V)
F
Figure 2. Forward Characteristics
Figure 3. Reverse Characteristics
700
600
500
400
300
200
100
0
500
400
300
200
100
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE o(C)
, CASE TEMPERATURE o(C)
TC
Figure 4. Current Derating
Figure 5. Power Derating
240
180
120
60
10000
1000
100
0
0
200
400
600
800
0.1
1
10
100
800
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 6. Capacitive Charge vs. Reverse Voltage
Figure 7. Capacitance vs. Reverse Voltage
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4
PCFFS40120AF
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
70
56
42
28
14
0
0
200
400
600
800
VR, REVERSE VOLTAGE (V)
Figure 8. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
P
DM
10−1
10−2
10−3
D=0.5
D=0.2
t
1
t
2
D=0.1
D=0.05
NOTES
(t) = r(t) x R
D=0.02
D=0.01
SINGLE PULSE
Z
q
q
JC
JC
R
= 0.22 C/W
q
JC
Peak T = P
x Z (t) + T
q
JC C
J
DM
Duty cycle,D = tt
1 /
2
10−6
10−5
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 9. Junction-to-Case Transient Thermal Response Curve
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5
PCFFS40120AF
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
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6
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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