SBAT54T1G [ONSEMI]
肖特基势垒二极管;
| 型号： | SBAT54T1G |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒二极管 光电二极管 整流二极管 |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54T1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
• Extremely Fast Switching Speed
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
• Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc
F
• Pb−Free Package is Available
1
2
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
CATHODE
ANODE
Rating
Reverse Voltage
Symbol
Value
Unit
V
30
V
R
Forward Power Dissipation, FR−5 Board
(Note 1)
P
F
@ T = 25°C
A
400
3.2
mW
mW/°C
SOD−123
CASE 425
STYLE 1
Derate above 25°C
2
Thermal Resistance,
Junction−to−Case
R
ꢀ
JL
174
°C/W
1
Thermal Resistance,
Junction−to−Ambient
R
ꢀ
JA
492
°C/W
Forward Current (DC)
I
200 Max
600
mA
mA
F
MARKING DIAGRAM
Non−Repetitive Peak Forward Current
I
FSM
t < 10 msec
p
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
I
300
mA
FRM
SBM G
1
G
Junction Temperature
T
−55 to 125
°C
°C
J
Storage Temperature Range
T
−55 to +150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SB
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
†
Device
BAT54T1
Package
Shipping
SOD−123
3000 / Tape & Reel
3000 / Tape & Reel
BAT54T1G
SOD−123
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005 − Rev. 8
BAT54T1/D
BAT54T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
30
−
−
V
(BR)R
(I = 10 ꢁ A)
R
Total Capacitance
(V = 1.0 V, f = 1.0 MHz)
R
C
−
−
−
−
−
−
−
−
7.6
0.5
10
2.0
pF
ꢁ Adc
Vdc
Vdc
Vdc
ns
T
Reverse Leakage
(V = 25 V)
R
I
R
Forward Voltage
(I = 0.1 mAdc)
F
V
V
V
0.22
0.41
0.52
−
0.24
0.5
F
F
F
Forward Voltage
(I = 30 mAdc)
F
Forward Voltage
(I = 100 mAdc)
F
0.8
Reverse Recovery Time
t
5.0
rr
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)
R(REC)
F
R
Forward Voltage
(I = 1.0 mAdc)
F
V
V
0.29
0.35
0.32
0.40
Vdc
Vdc
F
F
Forward Voltage
(I = 10 mAdc)
F
Forward Current (DC)
I
−
−
−
−
−
−
200
300
600
mAdc
mAdc
mAdc
F
Repetitive Peak Forward Current
I
I
FRM
FSM
Non−Repetitive Peak Forward Current
(t < 1.0 s)
820
ꢂ
+10 V
2 k
0.1 ꢁ F
I
F
t
t
t
r
p
I
F
100 ꢁ H
t
t
10%
90%
rr
0.1 ꢁ F
DUT
50 ꢂ Output
Pulse
Generator
50 ꢂ Input
Sampling
Oscilloscope
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54T1
100
10
125°C
85°C
150°C
1.0
0.1
25°C
−40°C
−55°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
1000
100
T = 150°C
A
T = 125°C
A
10
1.0
T = 85°C
A
0.1
0.01
T = 25°C
A
0.001
15
25
30
0
5
10
20
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Total Capacitance
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3
BAT54T1
PACKAGE DIMENSIONS
SOD−123
PLASTIC PACKAGE
CASE 425−04
ISSUE E
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A1
2. CONTROLLING DIMENSION: INCH.
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
−−−
MAX
1.35
0.10
0.71
0.15
1.80
2.84
3.86
−−−
MIN
0.037
0.000
0.020
−−−
NOM
0.046
0.002
0.024
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
A
A1
b
0.94
0.00
0.51
−−−
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
−−−
0.055
0.100
0.140
0.010
0.063
0.106
0.145
−−−
E
H
E
L
0.25
L
STYLE 1:
PIN 1. CATHODE
2. ANODE
2
C
b
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BAT54T1/D
相关型号：
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0.215A, 70V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
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