SBRB1045G [ONSEMI]
SWITCHMODE Schottky Power Rectifier; 开关模式功率肖特基整流器
| 型号： | SBRB1045G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Schottky Power Rectifier |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRB1045G,
MBRD1045G,
SBRB1045G,
SBRD81045T4G
Preferred Device
SWITCHMODE
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
1
4
3
Features
MARKING DIAGRAM
Guardring for Stress Protection
Low Forward Voltage
4
AY WW
175C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
AEC−Q101 Qualified and PPAP Capable
SBRB and SBRD8 Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements
All Packages are Pb−Free*
MBRB1045G
1
AKA
3
2
D PAK
CASE 418B
A
Y
= Assembly Location
= Year
WW
= Work Week
Mechanical Characteristics:
MBRB1045 = Device Code
G
AKA
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
= Pb−Free Package
= Diode Polarity
2
Weight: 1.7 grams for D PAK (approximately)
0.4 grams for DPAK (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MARKING DIAGRAM
4
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL1 Requirements
YWW
B10
45G
2
1
3
DPAK
CASE 369C
ESD Ratings:
Y
= Year
= Work Week
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
WW
B1045
G
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2012 − Rev. 8
MBRB1045/D
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
45
V
RRM
RWM
R
V
V
Average Rectified Forward Current (Rated V ) T = 135C
I
F(AV)
10
20
A
A
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 135C
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
150
A
FSM
(MBRB/SBRB)
70
(MBRD/SBRD)
Operating Junction and Storage Temperature Range (Note 1)
T , T
−65 to +175
C
J
stg
Voltage Rate of Change (Rated V )
dv/dt
10000
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
C/W
(MBRB1045G)
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
(MBRD1045G)
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
R
1.0
50
q
JC
JA
R
q
2.43
68
R
R
q
JC
JA
q
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
V
F
V
(I = 10 Amps, T = 125C)
0.57
0.72
0.84
F
J
(I = 20 Amps, T = 125C)
F
J
(I = 20 Amps, T = 25C)
F
J
Maximum Instantaneous Reverse Current (Note 3)
I
R
mA
(Rated dc Voltage, T = 125C)
15
0.1
J
(Rated dc Voltage, T = 25C)
J
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
ORDERING INFORMATION
Device
†
Package
Shipping
2
MBRB1045G
D PAK
50 Units / Rail
50 Units / Rail
(Pb−Free)
2
SBRB1045G
D PAK
(Pb−Free)
2
MBRB1045T4G
SBRB1045T4G
MBRD1045G
D PAK
800 Units / Tape & Reel
800 Units / Tape & Reel
50 Units / Rail
(Pb−Free)
2
D PAK
(Pb−Free)
DPAK
(Pb−Free)
MBRD1045T4G
SBRD81045T4G
DPAK
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
(Pb−Free)
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
100
100
T = 150C
J
T = 150C
J
70
50
70
100C
25C
100C
50
25C
30
20
30
20
10
7.0
5.0
10
7.0
5.0
3.0
2.0
3.0
2.0
1.0
1.0
0.7
0.5
0.7
0.5
0.3
0.2
0.3
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
100
10
100
10
T = 150C
J
150C
125C
100C
125C
100C
1.0
1.0
0.1
75C
75C
0.1
25C
0.01
0.01
25C
0.001
0.001
0
5.0
10
15
20
25
30
35
40
45
50
0
5.0
10
15
20
25
30
35
40
45 50
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
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3
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
1400
1200
1000
800
200
100
70
600
50
400
30
20
200
0
0
10
20
30
40
50
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
NUMBER OF CYCLES AT 60 Hz
Figure 5. Typical Capacitance
Figure 8. Maximum Surge Capability
18
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
RATED VOLTAGE APPLIED
dc
16
dc
14
12
SQUARE
WAVE
SQUARE
WAVE
10
8.0
6.0
4.0
2.0
0
1.0
0
130
135
140
145
150
155
0
2.0
4.0
6.0
8.0
10
12
14
16
18
T , CASE TEMPERATURE (C)
C
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 6. Current Derating, Case,
Figure 7. Forward Power Dissipation
RqJC = 1.0 C/W
http://onsemi.com
4
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.25X04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
C
A
D
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
E
c2
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
PLANE
SEATING
PLANE
L2
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBRB1045/D
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