SMBT35200MT1G [ONSEMI]
High Current Surface Mount PNP Silicon;
| 型号： | SMBT35200MT1G |
| 厂家： | 
ONSEMI |
| 描述： | High Current Surface Mount PNP Silicon |
| 文件： | 总5页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor
for Load Management
in Portable Applications
http://onsemi.com
Features
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T = 25°C)
A
CASE 318G
TSOP−6
STYLE 6
Rating
Symbol
Max
−35
Unit
Vdc
Vdc
Vdc
Adc
A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
−55
COLLECTOR
1, 2, 5, 6
−5.0
−2.0
−5.0
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
3
I
CM
BASE
ESD
HBM Class 3
MM Class C
4
THERMAL CHARACTERISTICS
Characteristic
EMITTER
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation
P
(Note 1)
D
T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
G4 MG
Thermal Resistance,
Junction−to−Ambient
R
(Note 1)
°C/W
G
q
JA
200
1
Total Device Dissipation
P
(Note 2)
(Note 2)
D
G4
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
T = 25°C
1.0
8.0
W
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
°C/W
°C/W
W
q
JA
(Note: Microdot may be in either location)
120
80
Thermal Resistance,
Junction−to−Lead #1
R
q
JL
ORDERING INFORMATION
†
Device
Package
Shipping
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Notes 2 & 3)
1.75
MBT35200MT1G
TSOP−6
3,000 /
(Pb−Free)
Tape & Reel
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
SMBT35200MT1G
TSOP−6
3,000 /
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 5
MBT35200MT1/D
MBT35200MT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −10 mAdc, I = 0)
V
V
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
−35
−55
−5.0
−
−45
−65
−
−
C
B
Collector−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
C
E
Emitter−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
Vdc
−7.0
−
E
C
Collector Cutoff Current
(V = −35 Vdc, I = 0)
I
mAdc
mAdc
mAdc
CBO
−0.03
−0.03
−0.01
−0.1
−0.1
−0.1
CB
E
Collector−Emitter Cutoff Current
(V = −35 Vdc)
I
CES
EBO
−
CES
Emitter Cutoff Current
I
(V = −4.0 Vdc)
−
EB
ON CHARACTERISTICS
DC Current Gain (Note 1)
h
FE
(I = −1.0 A, V = −1.5 V)
100
100
100
200
200
200
−
400
−
C
CE
(I = −1.5 A, V = −1.5 V)
C
CE
(I = −2.0 A, V = −3.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 1)
(I = −0.8 A, I = −0.008 A)
V
V
CE(sat)
−
−
−
−0.125
−0.175
−0.260
−0.15
−0.20
−0.31
C
B
(I = −1.2 A, I = −0.012 A)
C
B
(I = −2.0 A, I = −0.02 A)
C
B
Base−Emitter Saturation Voltage (Note 1)
(I = −1.2 A, I = −0.012 A)
V
V
V
BE(sat)
−
−
−0.68
−0.81
−0.85
C
B
Base−Emitter Turn−on Voltage (Note 1)
(I = −2.0 A, V = −3.0 V)
V
BE(on)
−0.875
C
CE
Cutoff Frequency
(I = −100 mA, V = −5.0 V, f = 100 MHz)
f
MHz
T
100
−
−
−
650
100
−
C
CE
Input Capacitance (V = −0.5 V, f = 1.0 MHz)
Cibo
600
85
pF
pF
nS
nS
EB
Output Capacitance (V = −3.0 V, f = 1.0 MHz)
Cobo
−
CB
Turn−on Time (V = −10 V, I = −100 mA, I = −1 A, R = 3 W)
t
−
35
CC
B1
C
L
on
off
Turn−off Time (V = −10 V, I = I = −100 mA, I = 1 A, R = 3 W)
t
−
225
−
CC
B1
B2
C
L
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
http://onsemi.com
2
MBT35200MT1
0.25
I /I = 50
C B
0.1
0.20
0.15
0.10
I /I = 100
C B
100°C
50
25°C
-55°C
10
0.01
0.05
0
0.001
0.001
0.01
0.1
1.0
0.001
0.01
0.1
1.0
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
100°C
25°C
-55°C
25°C
100°C
-55°C
0.2
0
0.2
0
0.001
0.01
0.1
1.0
0.001
0.01
0.1
1.0
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.1
1.0
0.9
0.8
0.7
0.6
0.5
750
700
650
600
550
500
450
400
-55°C
25°C
100°C
0.4
0.3
350
300
0.001
0.01
0.1
1.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I , COLLECTOR CURRENT (AMPS)
C
V
EB
, EMITTER BASE VOLTAGE (VOLTS)
Figure 5. Base Emitter Turn−On Voltage
Figure 6. Input Capacitance
versus Collector Current
http://onsemi.com
3
MBT35200MT1
10
225
200
175
150
125
100
75
1 s 100 ms 10 ms
1 ms
100 ms
1.0
0.1
DC
50
25
0
SINGLE PULSE AT T = 25°C
amb
0.01
0.1
1.0
10
100
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CB
, COLLECTOR BASE VOLTAGE (VOLTS)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
10
100
1000
Figure 9. Normalized Thermal Response
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4
MBT35200MT1
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE U
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
H
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
6
1
5
4
L2
GAUGE
PLANE
E1
E
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
2
3
L
MILLIMETERS
SEATING
M
C
NOTE 5
DIM
A
A1
b
c
D
E
E1
e
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
NOM
1.00
MAX
1.10
0.10
0.50
0.26
3.10
3.00
1.70
1.05
0.60
PLANE
b
DETAIL Z
e
0.06
0.38
0.18
3.00
c
2.75
A
0.05
1.50
0.95
L
0.40
A1
L2
M
0.25 BSC
−
DETAIL Z
0°
10°
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
0.95
3.20
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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MBT35200MT1/D
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