SMMBT5551LT3G [ONSEMI]
High Voltage Transistors;
| 型号： | SMMBT5551LT3G |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Transistors 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5550L, MMBT5551L
High Voltage Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
www.onsemi.com
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
EMITTER
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBT5550
MMBT5551
140
160
MARKING
DIAGRAM
3
Collector−Base Voltage
Vdc
MMBT5550
MMBT5551
160
180
1
2
x1x M G
Emitter−Base Voltage
6.0
Vdc
mAdc
V
SOT−23 (TO−236)
CASE 318
G
Collector Current − Continuous
Electrostatic Discharge
I
C
600
1
STYLE 6
ESD
Human Body Model
Machine Model
> 8000
> 400
x1x = Device Code
M1F = MMBT5550LT
G1 = MMBT5551LT
= Date Code*
THERMAL CHARACTERISTICS
Characteristic
M
Symbol
Max
Unit
G
= Pb−Free Package
(Note: Microdot may be in either location)
Total Device Dissipation FR−5 Board
P
D
(Note 1) @T = 25°C
225
1.8
mW
mW/°C
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Derate Above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
R
556
°C/W
q
JA
P
D
Substrate (Note 2) @T = 25°C
300
2.4
mW
mW/°C
ORDERING INFORMATION
A
Derate Above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
†
Device
Package
Shipping
R
417
°C/W
°C
q
JA
MMBT5550LT1G
SOT−23
3,000 / Tape &
Reel
(Pb−Free)
T , T
−55 to +150
J
stg
MMBT5550LT3G
MMBT5551LT1G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
SMMBT5551LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBT5551LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
SMMBT5551LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 12
MMBT5550LT1/D
MMBT5550L, MMBT5551L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
MMBT5550
MMBT5551
140
160
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
Vdc
Vdc
MMBT5550
MMBT5551
160
180
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
6.0
−
E
C
Collector Cutoff Current
(V = 100 Vdc, I = 0)
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
−
−
−
−
100
50
100
50
nAdc
CB
E
(V = 120 Vdc, I = 0)
CB
E
(V = 100 Vdc, I = 0, T = 100°C)
mAdc
CB
E
A
A
(V = 120 Vdc, I = 0, T = 100°C)
CB
E
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
nAdc
EBO
−
50
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 1.0 mAdc, V = 5.0 Vdc)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
60
80
60
80
20
30
−
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
C
250
250
−
CE
(I = 50 mAdc, V = 5.0 Vdc)
C
CE
−
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
nA
CE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
0.15
0.25
0.20
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
1.0
1.2
1.0
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Collector Emitter Cut−off
(V = 10 V)
I
CES
Both Types
−
−
50
100
CB
(V = 75 V)
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
www.onsemi.com
2
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T = 125°C
J
CE
25°C
-ꢀ55°C
100
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I = 1.0 mA
C
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
0.30
V
CE
= 30 V
I /I = 10
C B
0
10
0.25
0.20
0.15
0.10
0.05
0
150°C
25°C
T = 125°C
-1
J
10
I = I
C
CES
-2
10
10
75°C
REVERSE
-3
FORWARD
-55°C
25°C
-4
10
10
-5
0.4 0.3 0.2 0.1
0
0.1
0.2 0.3
0.4 0.5 0.6
0.0001
0.001
0.01
0.1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Cut−Off Region
Figure 4. VCE(sat)
www.onsemi.com
3
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
1.10
I /I = 10
C B
V
CE
= 10 V
-55°C
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
-55°C
25°C
25°C
150°C
150°C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. VBE(sat)
Figure 6. VBE(on)
100
2.5
2.0
1.5
70
50
T = 25°C
J
T = -55°C to +135°C
J
30
20
1.0
0.5
0
q
for V
CE(sat)
VC
10
C
ibo
7.0
5.0
-0.5
-1.0
-1.5
-2.0
-2.5
q
for V
BE(sat)
VB
C
3.0
2.0
obo
1.0
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30 50 100
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
V
V
CC
30 V
BB
-ꢀ8.8 V
10.2 V
V
in
100
R
3.0 k
R
C
0.25 mF
10 ms
INPUT PULSE
B
V
out
5.1 k
100
t , t ≤ 10 ns
1N914
r
f
DUTY CYCLE = 1.0%
V
in
Values Shown are for I @ 10 mA
C
Figure 9. Switching Time Test Circuit
www.onsemi.com
4
MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1000
100
10
1
V
= 1 V
CE
T = 25°C
A
10 mS
0.1
0.01
1.0 S
1
0.001
0.1
1.0
10
100
1000
1.0
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
1000
I , COLLECTOR CURRENT (mA)
C
V
Figure 10. Current Gain Bandwidth Product
Figure 11. Safe Operating Area
100
1000
500
I /I = 10
C B
70
50
T = 25°C
J
T = 25°C
J
t @ V = 120 V
r CC
30
20
300
200
t @ V = 30 V
r CC
10
100
50
C
ibo
7.0
5.0
t @ V
d
= 1.0 V
EB(off)
C
3.0
2.0
obo
30
20
V
CC
= 120 V
1.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3 0.5 1.0
2.0 3.0 5.0 10
20 30 50 100 200
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 12. Capacitances
Figure 13. Turn−On Time
www.onsemi.com
5
MMBT5550L, MMBT5551L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10 _
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10 _
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0 _
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
PIN 1. BASE
SIDE VIEW
END VIEW
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
MMBT5550LT1/D
相关型号：
SMMBTA06LT1
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
©2020 ICPDF网 联系我们和版权申明