STK534U362C-E [ONSEMI]
智能功率模块 (IPM)，600 V，10 A;
| 型号： | STK534U362C-E |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块 (IPM)，600 V，10 A 局域网 电动机控制 |
| 文件： | 总16页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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STK534U362C-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In
line Package). Output stage uses IGBT/FRD technology and implements Under
Voltage Protection (UVP). Internal Boost diodes are provided for high side gate
boost drive.
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Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly compatible
with microcontrollers.
Built-in cross conduction prevention.
Externally accessible embedded thermistor for substrate temperature
measurement
Certification
UL1557 (File number: E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Remarks
Ratings
450
600
±10
±5
Unit
V
Supply voltage
V
V
P to U-, V-, W-, surge < 500 V
*1
CC
CE
Collector-emitter voltage
Output current
P to U, V, W or U, V, W, to U-, V-, W-
P,U-,V-,W-,U,V,W terminal current
V
A
Io
P,U-,V-,W-,U,V,W terminal current, Tc = 100C
P,U-,V-,W-,U,V,W terminal current, P.W. = 1 ms
A
Output peak current
Pre-driver voltage
Iop
±20
20
A
VD1,2,3,4
VB1 to U, VB2 to V, VB3 to W, V
HIN1, 2, 3, LIN1, 2, 3
FLTEN terminal
to V
*2
V
DD
SS
Input signal voltage
V
0.3 to V
0.3 to V
V
IN
DD
DD
FLTEN terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
Operating case temperature
Tightening torque
VFLTEN
Pd
V
IGBT per 1 channel
31.2
150
W
Tj
IGBT, FRD, Pre-Driver IC
C
C
C
Nm
VRMS
Tstg
Tc
40 to +125
20 to +100
0.9
IPM case
A screw part
*3
Withstand voltage
Vis
50 Hz sine wave AC 1 minute
*4
2000
Reference voltage is “V ” terminal voltage unless otherwise specified.
SS
*1: Surge voltage developed by the switching operation due to the wiring inductance between P and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V
to V
.
DD
SS
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 s.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September 2016 - Rev. 1
1
Publication Order Number :
STK534U362C-E/D
STK534U362C-E
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V
Test
Parameter
Symbol
Conditions
MIN
TYP
MAX
Unit
circuit
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
Collector to emitter saturation voltage
I
V
= 600 V
CE
-
-
-
-
-
100
100
2.4
-
μA
μA
CE
IR(BD)
Fig.1
Fig.2
Fig.3
-
VR(BD) = 600 V
Ic = 10 A, Tj=25C
Ic = 5 A, Tj=100C
IF = 10 A, Tj=25C
IF = 5 A, Tj=100C
IGBT
1.6
1.4
1.4
1.2
-
V
(SAT)
V
V
CE
-
2.1
-
Diode forward voltage
VF
θj-c(T)
θj-c(D)
-
-
4
Junction to case thermal resistance
Control (Pre-driver) section
Pre-driver power dissipation
C /W
FWD
-
6
VD1,2,3 = 15 V
VD4 = 15 V
-
0.08
0.4
4
ID
Fig.4
mA
-
1.6
High level Input voltage
Vin H
Vin L
IIN+
-
-
-
-
-
2.5
-
-
V
V
HIN1,HIN2,HIN3,
LIN1,LIN2,LIN3 to V
VIN = +3.3 V
Low level Input voltage
-
-
-
-
-
100
-
0.8
143
2
SS
Logic 1 input leakage current
Logic 0 input leakage current
FLTEN terminal sink current
μA
μA
mA
IIN-
VIN = 0 V
IoSD
FAULT:ON / VFLTEN=0.1V
From time fault condition
clear
2
-
FLTEN clearance delay time
FLTEN Threshold
FLTCLR
-
1.0
2.0
3.0
ms
VEN rising
VEN+
VEN-
-
-
-
-
-
-
-
2.5
-
V
V
VEN falling
0.8
-
ITRIP threshold voltage
ITRIP(16) to V (29)
SS
VITRIP
tITRIP
0.44
340
250
0.49
550
350
0.54
800
-
V
ITRIP to shutdown propagation delay
ITRIP blanking time
ns
ns
tITRIPBL
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCCUVH
VBSUVH
VCC and VBS supply undervoltage protection reset
VCC and VBS supply undervoltage protection set
VCC and VBS supply undervoltage hysteresis
-
-
-
10.5
10.3
0.14
11.1
10.9
0.2
11.7
11.5
-
V
V
V
Reference voltage is “V ” terminal voltage unless otherwise specified.
SS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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STK534U362C-E
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V, V
= 300 V, L = 3.9 mH
CC
Test
MIN
Parameter
Symbol
Conditions
TYP
MAX
Unit
circuit
Switching Character
t ON
0.3
0.5
1.5
1.2
Switching time
Io = 10 A
Io = 5 A
Fig.5
-
μs
t OFF
Eon
2.0
Turn-on switching loss
-
240
-
-
-
-
-
-
-
-
μJ
μJ
μJ
μJ
μJ
μJ
μJ
ns
Turn-off switching loss
Eoff
Fig.5
Fig.5
-
-
-
-
-
-
-
120
Total switching loss
Etot
360
Turn-on switching loss
Eon
270
Turn-off switching loss
Eoff
Io = 5 A, Tc = 100C
160
Total switching loss
Etot
430
Diode reverse recovery energy
Diode reverse recovery time
Reverse bias safe operating area
Short circuit safe operating area
Erec
Trr
-
-
-
-
17
IF = 5 A, P = 400 V, L = 0.5 mH,
Tc = 100C
62
RBSOA
SCSOA
Io = 20 A, V
= 450 V
Full square-
-
CE
= 400 V, Tc = 100C
V
4
-
μs
CE
Between U,V,W to
U-,V-,W-
Allowable offset voltage slew rate
dv/dt
-
50
-
50
V/ns
Reference voltage is “VSS” terminal voltage unless otherwise specified.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Notes
1. When the internal protection circuit operates, a Fault signal is turned ON (When the Fault terminal is low level, Fault signal
is ON state : output form is open DRAIN) but the Fault signal does not latch.After protection operation ends,it returns
automatically within about typ. 2 ms and resumes operation beginning condition. So, after Fault signal detection, set all
input signals to OFF (Low) at once. However, the operation of pre-drive power supply low voltage protection (UVLO:with
hysteresis about 0.2 V) is as follows.
Upper side:
The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue
till the input signal will turn ‘low’.
Lower side:
The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal
voltage.
2. When assembling the IPM on the heat sink with M3 type screw, tightening torque range is 0.6 Nm to 0.9 Nm.
3. When use the over-current protection with external resistor, please set resistance value so that current protection value
becomes equal to or less than the double (2 times) of the rating output electric current (Io).
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3
STK534U362C-E
Equivalent Block Diagram
VB3(1)
W,VS3(2)
VB2(5)
V,VS2(6)
VB1(9)
U,VS1(10)
P(13)
BD BD BD
Boot-Resistor
U.V.
U.V.
U.V.
U-(17)
V-(19)
W-(21)
Level
Level
Level
Shifter
Shifter
Shifter
HIN1(20)
HIN2(22
HIN3(23)
LIN1(24)
LIN2(25)
Logic
Logic
Logic
LIN3(26)
TH(27)
Thermistor
ITRIP(16)
Shut down
VDD-UnderVoltage
VDD(28)
VSS(29)
FLTEN(18)
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4
STK534U362C-E
Test Circuit
(The tested phase : U+ shows the upper side of the U phase and U- shows the lower side of the U phase.)
ICE / IR(BD)
U+
13
10
V+
13
6
W+
13
2
U-
10
17
V-
6
19
W-
2
21
M
N
U(BD)
9
29
V(BD)
5
29
W(BD)
1
29
M
N
Fig.1
V (SAT) (Test by pulse)
CE
U+
13
10
20
V+
13
6
W+
13
2
U-
10
17
24
V-
6
19
25
W-
2
21
26
M
N
m
22
23
Fig.2
VF (Test by pulse)
U+
13
10
V+
13
6
W+
13
2
U-
10
17
V-
6
19
W-
2
21
M
N
Fig.3
ID
VD1 VD2 VD3
VD4
28
29
M
N
9
5
6
1
2
10
Fig.4
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5
STK534U362C-E
Switching time (The circuit is a representative example of the lower side U phase.)
Input signal
(0 to 5V)
90%
Io
10%
tOFF
tON
Fig.5
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6
STK534U362C-E
Input / Output Timing Chart
VBS undervoltage protection reset signal
ON
HIN1,2,3
OFF
LIN1,2,3
VDD undervoltage protection reset voltage
*2
VDD
VBS undervoltage protection reset voltage
*3
VB1,2,3
VIT≥0.54V
*4
ITRIP terminal
Voltage
VIT<0.44V
FLTEN
ON
*1
*1
Upper
U, V, W
OFF
Lower
U ,V, W
Automatically reset after protection
(typ.2ms)
Fig. 7
Notes
1. *1 shows the prevention of shoot-thru via control logic, however, more dead time must be added to account for switching
delay externally.
2. *2 when V
decreases all gate output signals will go low and cut off all 6 IGBT outputs. When V
rises the operation
DD
DD
will resume immediately.
3. *3 when the upper side voltage at VB1, VB2 and VB3 drops only the corresponding upper side output is turned off. The
outputs return to normal operation immediately after the upper side gate voltage rises.
4. *4 when VITRIP exceeds threshold all IGBT’s are turned off and normal operation resumes 2ms (typ) after over current
condition is removed.
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7
STK534U362C-E
Logic level table
P
INPUT
OUTPUT
U,V,W
P
HIN
H
LIN
L
Itrip
L
Ho
H
Lo
L
FLTEN
OFF
Ho
Lo
HIN1,2,3
(20,22,23)
L
H
L
L
H
U-,V-,W-
OFF
IC
Driver
U,V,W
(10,6,2)
High
L
L
H
X
L
L
L
L
L
L
L
L
OFF
OFF
ON
LIN1,2,3
(24,25,26)
Impedance
High
H
X
Impedance
High
H
Impedance
U-, V-, W-
Fig. 8
Sample Application Circuit
STK534U362C-E
VB1 : 9
VD1
CB1
U,VS1 : 10
P : 13
VCC
CI
CS
VB2 : 5
CB2
CB3
VD2
VD3
V,VS2 : 6
U- : 17
V- : 19
W- : 21
RSU
VB3 : 1
RSV
W,VS3 : 2
RSW
Op-Amp,
Controller
HIN1 : 20
HIN2 : 22
HIN3 : 23
LIN1 : 24
LIN2 : 25
LIN3 : 26
TH : 27
U,VS1 : 10
V,VS2 : 6
W,VS3 : 2
Control
Circuit
(5V)
FLTEN : 18
ITRIP : 16
VDD : 28
VSS : 29
RS,
Controller
RP
RTH
CD4
VD4=15V
Fig.9
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STK534U362C-E
Recommended Operating Condition at Tc = 25C
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
V
Supply voltage
V
+ to U-(V-,W-)
VB1 to U,VB2 to V,VB3 to W
to V *1
0
280
15
450
17.5
16.5
CC
VD1,2,3
VD4
12.5
13.5
Pre-driver
V
V
V
15
supply voltage
DD
SS
ON-state input voltage
OFF-state input voltage
PWM frequency
V
V
(ON)
IN
3.0
0
-
-
-
-
-
-
5.0
0.3
20
-
HIN1,HIN2,HIN3,
LIN1,LIN2,LIN3
(OFF)
IN
fPWM
DT
1
kHz
μs
Dead time
Turn-off to turn-on (external)
ON and OFF
2.5
1
Allowable input pulse width
Mounting torque
PWIN
-
μs
‘M3’ type screw
0.6
0.9
Nm
*1 Pre-drive power supply (VD4 = 15 ±1.5 V) must be have the capacity of Io = 20 mA (DC), 0.5 A (Peak).
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
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STK534U362C-E
Usage Precaution
1. This IPM includes bootstrap diode and resistor. Therefore, by adding a capacitor (CB : about 1 to 47 μF), a
single power supply drive is enabled. In this case, an electric charge is charged to “CB” by making lower side
IGBT turn on.
And, please select the capacitance of “CB”(externally set) equal to or less than 47 μF (±20%).If selecting the
capacitance more than 47 μF (±20%), connect a resistor (about 20 Ω) in series between each 3-phase upper side
power supply terminals (VB1,2,3) and each bootstrap capacitor. Also, the upper side power supply voltage
sometimes declines by the way of controlling. Please confirm the voltage with an actual set.
(When not using the bootstrap circuit, each upper side pre-drive power supply needs an external independent
power supply.)
2. Because the jump voltage which is accompanied by the vibration in case of switching operation occurs by the
influence of the floating inductance of the wiring of the outer power supply which is connected with of the “+”
terminal and the “U-”(“V-”, “W-”) terminal, restrains and spares serge voltage being as the connection of the
snubber circuit (Capacitor / CS /about 0.1 F to 10 F) for the voltage absorption with the neighborhood as
possible between the “+” and the point of intersection of the “U-”, “V-” and “W-” terminal, and so on, with
making a wiring length (among the terminals each from “CI”) short and making a wiring inductance small.
3. The “FLTEN” terminal (18 pin) is open Drain (It is operating as “FLTEN” when becoming Low). This
terminal serves as the shut down function of the built-in pre-driver. (When the terminal voltage is above
3V,normalcy works, and it is shut down when it is equal to or less than 0.8 V.)Please make pulling up outside
so that “FLTEN” terminal voltages become more than 3 V. When the pull up voltage (VP) is at 5 V, pull up
resistor (RP) connects above 6.8 kΩ, and in case of VP = 15 V, RP connects above 20 kΩ.
4. Inside the IPM, thermistor is connected to between the “TH” terminal (27 pin) and the “V ” terminal (29 pin).
SS
The thermistor can be used as the temperature monitor by pull up with the resistance (Rth).
(This is for temperature monitors, and it is not a thing having the hyper temperature protection function by IPM
oneself). This is for temperature monitors of substrate in the steady movement state. Therefore, please take care
of the suddenly and partial fever.
5. The pull-down resistor (: 33 kΩ (typ)) is connected with the inside of the signal input terminal, but please
connect the pull-down resistor(about 2.2 to 3.3 kΩ) outside to decrease the influence of the noise by wiring etc.
6. The overcurrent protection feature operates only when it is possible to do a circuit control normally.For safety,
recommend installation a fuse, and so on in the “V ” line.
CC
7. Because the IPM can be destroyed when the motor connection terminal (pins 2, 6, and 10) is opened while the
motor is running, please be especially careful of the connection (soldering condition) of this terminal.
8. The “ITRIP” terminal (16 pin) is the input terminal of the built-in comparator. It can stop movement by
inputting the voltage more than Vref (0.44 V to 0.54 V). (At the time of movement, usually give me it for the
voltage less than Vref).
Please use it as various protections such as the overcurrent protection (feedback from external shunt
resistance).
In addition, the protection movement is not done a latch of.
After the protection movement end, I become the movement return state after typ.2ms. Therefore, please do the
protection movement detection of all input signals in OFF (LOW) promptly afterward.
9. When input pulse width is less than 1μs, an output may not react to the pulse. (Both ON signal and OFF signal)
This data shows the example of the application circuit and does not guarantee a design as the mass production set.
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STK534U362C-E
The characteristic of thermistor
Parameter
Resistance
Symbol
R25
Condition
Min
97
Typ.
100
Max
1034
5.88
Unit
kΩ
kΩ
k
T = 25C
T = 125C
Resistance
R125
B
4.93
4165
40
5.38
4250
4335
+125
B-Constant (25 to 50C)
Temperature Range
C
This data shows the example of the application circuit, does not guarantee a design as the mass production set.
Fig.10 Variation of thermistor resistance with temperature
Condition
Pull-up resistor = 39k
Pull-up voltage of TH = 5V
Fig.11 Variation of temperature sense voltage with thermistor temperature
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STK534U362C-E
The characteristic of PWM switching frequency
Fig.12 Maximum sinusoidal phase current as function of switching frequency
at Tc = 100C, V = 300 V
CC
Switching waveform
X:100ns/div
Io: 5A/div
Vce: 100V/div
Fig. 13 IGBT Turn-on. Typical turn-on waveform at Tc = 100C, V
CC
= 400 V, Io = 10 A
X:100ns/div
Vce: 100V/div
Io: 5A/div
Fig. 14 IGBT Turn-off. Typical turn-off waveform Tc = 100C, V
= 400 V, Io = 10 A
CC
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STK534U362C-E
CB capacitor value calculation for bootstrap circuit
Calculate condition
Item
Symbol
VBS
Value
15
Unit
V
Upper side power supply.
Total gate charge of output power IGBT at 15 V.
Upper side power supply low voltage protection.
Upper side power dissipation.
Qg
89
nC
V
UVLO
IDMAX
TONMAX
12
400
-
μA
s
ON time required for CB voltage to fall from 15 V to UVLO
Capacitance calculation formula
Tonmax is upper arm maximum on time equal the time when the CB voltage falls from 15 V to the upper limit of Low
voltage protection level.
“ton-maximum" of upper side is the time that CB decreases 15 V to the maximum low voltage protection of the upper
side (12 V).
Thus, CB is calculated by the following formula.
VBS * CB – Qg – IDMAX * TONMAX = UVLO * CB
CB = (Qg + IDMAX * TONMAX) / (VBS – UVLO)
The relationship between tonmax and CB becomes as follows. CB is recommended to be approximately 3 times the
value calculated above. The recommended value of Cb is in the range of 1 to 47 μF, however, the value needs to be
verified prior to production.
Fig.15 TONMAX vs CB characteristic
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STK534U362C-E
Package Dimensions
unit : mm
SIP29 44x26.5
CASE 127CJ
ISSUE O
44.0
41.0
missing pin : 3, 4, 7, 8, 11, 12, 14, 15
2−R 1.8
S IP −05
1
29
+0.20
−0.05
1.27
0.6
28 1.27=35.56
3.2
0.5
5.0
( 35.0)
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STK534U362C-E
ORDERING INFORMATION
Device
Package
Shipping (Qty / Packing)
11 / Tube
SIP29 44x26.5
(Pb-Free)
STK534U362C-E
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
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