STK541UC60C-E [ONSEMI]
智能功率模块 (IPM)，600V，10A;
| 型号： | STK541UC60C-E |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块 (IPM)，600V，10A |
| 文件： | 总13页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
STK541UC60C-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
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This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Certification
UL Recognized (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Conditions
P to N, surge < 500 V
Ratings
Unit
V
Supply voltage
V
V
*1
450
600
CC
CE
Collector-emitter voltage
Output current
P to U,V,W or U,V,W to N
V
P, N, U,V,W terminal current
±10
A
Io
P, N, U,V,W terminal current at Tc = 100C
P, N, U,V,W terminal current for a Pulse width of 1ms
±5
A
Output peak current
Pre-driver voltage
Iop
±20
A
VD1, 2, 3, 4 VB1 to U, VB2 to V, VB3 to W, V
to V
*2
20
V
DD
SS
Input signal voltage
VIN
VFAULT
Pd
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
IGBT,FRD
0.3 to 7
V
FAULT terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
Operating substrate temperature
Tightening torque
0.3 to V
22
V
DD
W
Tj
150
C
C
C
Nm
VRMS
Tstg
Tc
40 to +125
40 to +100
0.9
IPM case temperature
Case mounting screws
50 Hz sine wave AC 1 minute
*3
*4
Isolation Voltage
Vis
2000
Reference voltage is “V ” terminal voltage unless otherwise specified.
SS
*1 : Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V
to V
terminal voltage.
DD
SS
*3 : Flatness of the heat-sink should be less than 0.15 mm.
*4 : Test conditions : AC 2500 V, 1 second.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 2
1
Publication Order Number :
STK541UC60C-E/D
STK541UC60C-E
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V
Test
Parameter
Symbol
Conditions
min
typ
max
Unit
circuit
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
I
V
= 600 V
CE
mA
mA
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
2.3
2.6
-
CE
IR(BD)
Fig.1
Fig.2
VR(BD)
-
Ic = 10 A
Upper side
1.4
1.7
1.3
1.5
1.3
1.6
1.2
1.4
-
Collector to emitter
saturation voltage
Tj = 25C
Lower side *1
Upper side
V
V
(SAT)
V
CE
Ic = 5 A
Tj = 100C
Lower side *1
Upper side
-
IF = 10 A
2.2
2.5
-
Tj = 25C
Lower side *1
Upper side
Diode forward voltage
Fig.3
Fig.4
V
F
IF = 5 A
Tj = 100C
Lower side *1
-
Junction to case
θj-c(T)
θj-c(D)
IGBT
FRD
5.5
6.5
C/W
thermal resistance
-
Control (Pre-driver) section
VD1, 2, 3 = 15 V
VD4 = 15 V
-
-
0.08
1.6
-
0.4
4.0
-
Pre-driver power dissipation
ID
mA
High level Input voltage
Low level Input voltage
Vin H
Vin L
2.5
-
V
V
HIN1, HIN2, HIN3,
-
0.8
-
LIN1, LIN2, LIN3 to V
SS
Input threshold voltage hysteresis Vinth(hys)
0.5
76
97
-
0.8
118
150
2
V
Logic 0 input leakage current
Logic 1 input leakage current
FAULT terminal sink current
FAULT clear time
IIN+
VIN = +3.3 V
VIN = 0 V
160
203
-
A
A
mA
ms
IIN-
IoSD
FAULT : ON/VFAULT = 0.1 V
Fault output latch time
FLTCLR
VCCUP VSUP
6
9
12
V
and V undervoltage
S
CC
positive going threshold
and V undervoltage
10.5
10.3
0.14
11.1
10.9
0.2
11.7
11.5
-
V
V
V
V
VCCUN VSUN
CC
negative going threshold
and V undervoltage
S
V
VCCUVH
VSUVH-
ISD
CC
S
hysteresis
Over current protection level
PW = 100 μs
Fig.5
10
-
17
A
V
Output level for current monitor
ISO
Io = 10 A
0.30
0.33
0.36
Reference voltage is “V ” terminal voltage unless otherwise specified.
SS
*1 : The lower side’s V (SAT) and VF include a loss by the shunt resistance
CE
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V, V
= 300 V, L = 3.9 mH
CC
Test
Parameter
Symbol
Conditions
min
typ
max
Unit
circuit
Fig.6
Fig.6
Switching Character
tON
0.3
0.6
1.0
1.3
Switching time
Io = 10 A
Io = 5 A
s
tOFF
-
-
-
-
-
-
-
-
-
1.8
Turn-on switching loss
J
J
J
J
J
J
Eon
Eoff
Etot
240
220
460
300
260
560
17
-
-
-
-
-
-
-
-
Turn-off switching loss
Total switching loss
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Io = 5 A, Tc = 100C
Fig.6
Total switching loss
Etot
Diode reverse recovery energy
Diode reverse recovery time
Reverse bias safe operating area
Short circuit safe operating area
Erec
trr
J
IF = 5 A, P = 400 V,
Tc = 100C
ns
62
RBSOA
SCSOA
Io = 20 A, V
= 450 V
Full square
-
CE
= 400 V, Tc = 100C
V
s
4
-
CE
Reference voltage is “V ” terminal voltage unless otherwise specified.
SS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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2
STK541UC60C-E
Notes
1. The pre-drive power supply low voltage protection has approximately 0.2 V of hysteresis and operates as follows.
Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will
continue till the input signal will turn ‘high’.
Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input
signal voltage.
2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating
malfunction.
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3
STK541UC60C-E
Equivalent Block Diagram
VB1(8)
U(9)
VB2(5)
V(6)
VB3(2)
W(3)
P(11)
U.V.
U.V.
U.V.
Shunt Resistor
N (13)
Level
Shifter
Level
Level
Shifter
Shifter
HIN1(14)
HIN2(15)
HIN3(16)
LIN1(17)
LIN2(18)
LIN3(19)
FAULT(20)
Logic
Logic
Logic
Latch Time About 9ms
( Automatic Reset )
ISO(21)
Latch
Over-Current
VDD-Under Voltage
VDD(22)
VSS(23)
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4
STK541UC60C-E
Module Pin-Out Description
Pin
Name
Description
1
2
Without Pin
VB3
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
Without Pin
3
W,VS3
4
5
VB2
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
Without Pin
6
V,VS2
7
8
VB1
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
Without Pin
9
U,VS1
10
11
12
13
P
Positive Bus Input Voltage
Without Pin
N
Negative Bus Input Voltage
14 HIN1
15 HIN2
16 HIN3
17 LIN1
18 LIN2
19 LIN3
20 FAULT
21 ISO
Logic Input High Side Gate Driver - Phase U
Logic Input High Side Gate Driver - Phase V
Logic Input High Side Gate Driver - Phase W
Logic Input Low Side Gate Driver - Phase U
Logic Input Low Side Gate Driver - Phase V
Logic Input Low Side Gate Driver - Phase W
Fault output
Current monitor output
22 VDD
23 VSS
+15 V Main Supply
Negative Main Supply
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5
STK541UC60C-E
Test Circuit
The tested phase U+ shows the upper side of the U phase and U shows the lower side of the U phase.
■ I
/ IR(BD)
CE
ICE
VD1=15V
VD2=15V
VD3=15V
VD4=15V
U+
11
9
V+
11
6
W+
11
3
U-
9
V-
6
W-
3
M
N
13
13
13
VCE
U(BD)
8
V(BD)
5
W(BD)
M
N
2
23
23
23
Fig.1
■ V (SAT) (test by pulse)
CE
VD1=15V
VD2=15V
VD3=15V
VD4=15V
U+
11
9
V+
11
6
W+
11
3
U-
9
V-
6
W-
3
M
N
Ic
13
17
13
18
13
19
VCE(SAT)
m
14
15
16
Fig.2
■ V (test by pulse)
F
U+
V+
11
6
W+
11
3
U-
9
V-
6
W-
3
VF
IF
M
N
11
9
13
13
13
Fig.3
■ ID
VD1
8
VD2
5
VD3
2
VD4
22
ID
M
N
VD*
9
6
3
23
Fig.4
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6
STK541UC60C-E
■ ISD
VD1=15V
Input signal
(0 to 5 V)
VD2=15V
VD3=15V
Io
VD4=15V
Io
ISD
Input signal
100 μs
Fig.5
■ Switching time (The circuit is a representative example of the lower side U phase.)
VD1=15V
Input signal
(0 to 5 V)
VD2=15V
VCC
CS
90%
VD3=15V
Io
VD4=15V
Io
10%
Input signal
tON
tOFF
Fig.6
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7
STK541UC60C-E
Input / Output Timing Chart
VBS undervoltage protection reset signal
OFF
HIN1,2,3
ON
LIN1,2,3
VDD
VDD undervoltage protection reset voltage
*2
VBS undervoltage protection reset voltage
*3
VB1,2,3
*4
-------------------------------------------------------ISD operation current level----------------------------------------------------
N terminal
(BUS line)
Current
FAULT terminal
Voltage
(at pulled-up)
ON
*1
*1
Upper
U, V, W
OFF
Lower
U ,V, W
Automatically reset after protection
(typ.9ms)
Fig.7
Notes
*1 : Diagram shows the prevention of shoot-through via control logic. More deadtime to account for switching delay needs to be added
externally.
*2 : If lower V
drops all gate output signals will go low and cut off all of 6 IGBT outputs. part. When V rises the operation will resume
DD
DD
immediately.
*3 : When the upper side gate voltage at VB1, VB2 and VB3 drops only the corresponding upper side output is turned off. The outputs
return to normal operation immediately after the upper side gat voltage rises.
*4 : In case of over current detection all IGBT’s are turned off and the FAULT output is asserted. Normal operation resumes in 6 to 12 ms
after the over current condition is removed.
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STK541UC60C-E
Logic level table
P(11)
INPUT
OUTPUT
Upper
IGBT
Upper Lower
HIN
LIN
OCP
U,V,W
FAULT
IGBT
OFF
ON
IGBT
HIN1,2,3
(14,15,16)
H
L
L
OFF
OFF
ON
N
P
OFF
OFF
IC
Driver
U,V,W
(9,6,3)
H
OFF
High
Impedance
LIN1,2,3
(17,18,19)
L
H
X
L
H
X
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
ON
High
Impedance
Lower
IGBT
High
Impedance
N(13)
Fig. 8
Sample Application Circuit
STK541UC60C-E
2 3
5 6
8 9
11
13 14 15 16 17 18 19 20 21 22 23
CB
CB
CB
CS
CD
V
=15V
Control Logic
DD
V
CC
CI
Fig. 9
Recommended Operating Conditions at Ta = 25C
Item
Supply voltage
Symbol
Conditions
min
typ
max
Unit
V
V
P to N
VB1 to U,VB2 to V,VB3 to W
0
12.5
13.5
1
280
450
17.5
16.5
20
CC
VD1,2,3
VD4
fPWM
DT
15
15
-
Pre-driver supply voltage
V
V
to V
*1
DD
SS
PWM frequency
kHz
μs
Dead time
Turn-off to turn-on
ON and OFF
2
-
-
Allowable input pulse width
Tightening torque
PWIN
1
-
-
μs
‘M3’ type screw
0.6
-
0.9
Nm
*1 : Pre-drive power supply (VD4 = 15 ±1.5 V) must have the capacity of Io = 20 mA (DC), 0.5A (Peak).
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
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STK541UC60C-E
Usage Precaution
1. This IPM includes bootstrap diode and resistors. Therefore, by adding a capacitor “CB”, a high side drive voltage is generated; each
phase requires an individual bootstrap capacitor. The recommended value of CB is in the range of 1 to 47 μF, however this value
needs to be verified prior to production. If selecting the capacitance more than 47 μF (±20%), connect a resistor (about 20 Ω) in series
between each 3-phase upper side power supply terminals (VB1, 2, 3) and each bootstrap capacitor.
When not using the bootstrap circuit, each upper side pre-drive power supply requires an external independent power supply.
2. It is essential that wiring length between terminals in the snubber circuit be kept as short as possible to reduce the effect of surge
voltages. Recommended value of “CS” is in the range of 0.1 to 10 μF.
3. “ISO” (pin 21) is terminal for current monitor. High current may flow into that course when short-circuiting the “ISO” terminal and “V
”
SS
terminal. Please do not connect them.
4. “FAULT” (pin 20) is open DRAIN output terminal (Active Low). Pull up resistor is recommended more than 6.8 kΩ.
5. Pull up resistor of 100 kΩ is provided internally at the signal input terminals.
6. The over-current protection feature is not intended to protect in exceptional fault condition. An external fuse is recommended for
safety.
7. When input pulse width is less than 1.0 μs, an output may not react to the pulse (Both ON signal and OFF signal).
This data shows the example of the application circuit, does not guarantee a design as the mass production set.
The characteristic of PWM switching frequency
Fig. 10 Maximum sinusoidal phase current as function of switching frequency
at Tc = 100C, V = 400 V
CC
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10
STK541UC60C-E
CB capacitor value calculation for bootstrap circuit
Calculate conditions
Parameter
Symbol
VBS
Value
15
Unit
V
Upper side power supply
Total gate charge of output power IGBT at 15 V
Upper limit power supply low voltage protection
Upper side power dissipation
QG
89
12
400
-
nC
V
UVLO
IDMAX
TONMAX
μA
s
ON time required for CB voltage to fall from 15V to UVLO
Capacitance calculation formula
Thus, the following formula are true
VBS CB QG IDMAX TONMAX = UVLO CB
therefore,
CB = (QG + IDMAX TONMAX) / (VBS UVLO)
The relationship between TONMAX and CB becomes as follows. CB is recommended to be approximately 3 times the value calculated
above. The recommended value of CB is in the range of 1 to 47 μF, however, this value needs to be verified prior to production.
CB vs Tonmax
100
10
1
0.1
0.01
0.1
1
10
100
1000
Tonmax [ms]
Fig. 11 Tonmax - CB characteristic
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11
STK541UC60C-E
PACKAGE DIMENSIONS
unit : mm
The tolerances of length are +/ 0.5 mm unless otherwise specified.
missing pin : 1, 4, 7, 10, 12
note2
note3
4DB00
23
1
note1
note 1 : Mark for No.1 pin identification.
note 2 : The form of a character in this
drawing differs from that of IPM.
note 3 : This indicates the lot code.
The form of a character in this
drawing differs from that of IPM.
ORDERING INFORMATION
Device
Package
Shipping (Qty / Packing)
8 / Tube
SIP23 56x21.8
(Pb-Free)
STK541UC60C-E
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support
systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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