STMFS4935NT1G [ONSEMI]
单 N 沟道，功率 MOSFET，30V，93A，3.2mΩ;
| 型号： | STMFS4935NT1G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，30V，93A，3.2mΩ 晶体管 功率场效应晶体管 |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4935N
Power MOSFET
30 V, 93 A, Single N−Channel, SO−8 FL
Features
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
• Optimized Gate Charge to Minimize Switching Losses
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Applications
3.2 mW @ 10 V
4.2 mW @ 4.5 V
• CPU Power Delivery, DC−DC Converters
30 V
93 A
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
V
30
20
V
V
A
D (5,6)
DSS
V
GS
Continuous Drain
Current R
T = 25°C
I
D
21.8
A
q
JA
T = 100°C
A
13.8
2.63
(Note 1)
G (4)
Power Dissipation
T = 25°C
A
P
W
A
D
R
q
JA
(Note 1)
Continuous Drain
Current R
T = 25°C
A
I
D
40
25
S (1,2,3)
N−CHANNEL MOSFET
≤
q
JA
T = 100°C
A
10 s (Note 1)
Power Dissipation
T = 25°C
P
8.7
W
A
A
D
R
≤ 10 s
q
JA
MARKING
DIAGRAM
Steady
State
(Note 1)
Continuous Drain
Current R
T = 25°C
A
I
D
13
8.2
D
q
JA
T = 100°C
A
(Note 2)
1
S
S
S
G
D
D
4935N
AYWWG
G
Power Dissipation
T = 25°C
P
0.93
W
A
A
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
R
(Note 2)
q
JA
Continuous Drain
Current R
T
T
T
= 25°C
= 85°C
= 25°C
I
D
93
59
48
C
C
C
D
q
JC
(Note 1)
A
Y
= Assembly Location
= Year
Power Dissipation
P
D
W
A
R
q
JC
(Note 1)
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
275
100
A
p
Current Limited by Package
T = 25°C
A
I
A
Dmax
Operating Junction and Storage
Temperature
T ,
STG
−55 to
+150
°C
J
T
ORDERING INFORMATION
Source Current (Body Diode)
Drain to Source DV/DT
I
44
6
A
S
†
Device
Package
Shipping
dV/d
V/ns
mJ
t
NTMFS4935NT1G
SO−8 FL
(Pb−Free)
1500 /
Single Pulse Drain−to−Source Avalanche
Energy T = 25°C, V = 30 V, V = 10 V,
E
AS
126.1
Tape & Reel
J
DD
GS
I = 29 A , L = 0.3 mH, R = 25 W
L
pk
G
NTMFS4935NT3G
SO−8 FL
(Pb−Free)
5000 /
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
Tape & Reel
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 4
NTMFS4935N/D
NTMFS4935N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.6
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
R
47.5
134.8
14.4
q
JA
°C/W
R
q
JA
R
q
JA
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
15
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.2
1.63
4.0
2.7
2.7
3.7
3.7
32
2.0
3.2
4.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
DS(on)
V
= 10 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
GS
GS
mW
V
= 4.5 V
Forward Transconductance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3579
1264
39
4850
1710
59
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 15 V
pF
DS
Q
22
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
5.6
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
10.2
3.0
GS
Q
GD
Q
V
= 10 V, V = 15 V; I = 30 A
49.4
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
16.3
20
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
27.5
6.6
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4935N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
11.2
18.7
28.3
12.1
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.85
0.72
44.4
21.6
22.8
45
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 30 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
RR
L
0.65
0.005
1.84
1.1
nH
nH
nH
W
S
D
G
L
L
T = 25°C
A
Gate Inductance
Gate Resistance
R
2.0
G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4935N
TYPICAL CHARACTERISTICS
180
160
160
4.2 V
10 V
7 V
T = 25°C
J
V
GS
= 4.0
140
120
100
80
V
DS
= 10 V
V
3.8 V
140
120
100
80
4.5
3.6 V
3.4 V
3.2 V
T = 25°C
J
60
60
3.0 V
40
40
T = 125°C
2.8 V
2.6 V
J
20
0
20
0
2.4 V
T = −55°C
J
0
1
2
3
4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
0.0028
0.0026
0.014
0.013
0.012
0.011
0.010
0.009
T = 25°C
J
I
= 30 A
D
T = 25°C
J
V
= 4.5
V
GS
0.008
0.007
0.006
0.005
0.004
V
GS
= 10 V
0.0024
0.0022
0.0020
0.003
0.002
2.0
3.0
4.0
5.0
6.0
(V)
7.0
8.0
9.0
10
20
40
60
80
100
120
140
160
V
I , DRAIN CURRENT (A)
GS
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10,000
1000
V = 0 V
GS
I
V
= 30 A
D
= 10 V
T = 150°C
GS
J
T = 125°C
J
T = 85°C
J
100
10
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4935N
TYPICAL CHARACTERISTICS
11
4500
4000
3500
3000
2500
2000
1500
1000
QT
V
= 0 V
GS
10
9
T = 25°C
J
C
C
iss
8
7
6
5
4
3
2
Qgd
oss
Qgs
5
T = 25°C
J
V
V
= 15 V
= 10 V
DD
GS
500
0
I
D
= 30 A
1
0
C
rss
0
5
10
15
20
25
30
0
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
30
25
20
15
10
V
I
= 15 V
= 15 A
= 10 V
DD
t
d(off)
V
= 0 V
GS
D
V
GS
t
f
T = 125°C
J
t
r
t
d(on)
10
1
T = 25°C
J
5
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
130
120
110
100
90
I
D
= 29 A
10 ms
100 ms
80
70
1 ms
60
50
40
30
20
10
0
10 ms
0 ≤ V ≤ 20 V
Single Pulse
GS
1
T
= 25°C
C
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
dc
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4935N
TYPICAL CHARACTERISTICS
1000
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
70
60
50
40
30
20
10
0
0
10 20 30 40 50 60
ID (A)
70 80 90 100
Figure 14. GFS vs. ID
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6
NTMFS4935N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA−01
ISSUE D
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
−−−
6.15 BSC
5.80
−−−
1.27 BSC
0.61
−−−
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
0.51
0.51
0.05
3.00
0
0.71
−−−
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
5. DRAIN
3X
4X
b
8X
1.270
0.750
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
E2
2X
PIN 5
(EXPOSED PAD)
M
0.495
4.530
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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NTMFS4935N/D
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