2SD2266Q [PANASONIC]
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN;
| 型号： | 2SD2266Q |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
Unit: mm
For power switching
10.0 0.ꢀ
5.0 0.1
1.0 0.ꢀ
I Features
•
•
•
High-speed switching
Satisfactory linearity of forward current transfer ratio hFE
Allowing supply with the radial taping
1.ꢀ 0.1
C 1.0
18 0.ꢀ
ꢀ.ꢀ5 0.ꢀ
0.60.1
35 0.1
0.6
I Absolute Maximum Ratings TC = 25°C
1.05
5 0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
0.55 0.1
80
ꢀ.5 0.ꢀ
ꢀ.5 0.ꢀ
60
V
1
ꢀ 3
7
1: Base
2: Collector
3: Emitter
A
IC
4
A
MT4 (MT4 Type Package)
Base current
IB
1
A
TC = 25°C
Ta = 25°C
PC
1
W
Collector power
dissipation
2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Charteristics TC = 25°C
aram
Collector utoff urrent
mitter cutof current
Symbol
ICBO
Coditions
Min
Typ
Max
100
Unit
µA
µA
V
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 25 mA, IB = 0
VCE = 4 V, IC = 1 A
V= 4 V, IC = 4 A
VCE = 4 V, IC = 4 A
IC = 4 A, IB = 0.4 A
IEO
100
Colctor to emittee
Forward curre
VCEO
60
70
20
*
hFE1
320
hFE2
VBE
VCE(sat)
fT
Base to emitter volta
Collector to emitter saturation voltage
Transition frequency
Turn-on time
2.0
1.5
V
V
VCE = 12 V, IC = 0.2 A, f = 10 MHz
IC = 4 A, IB1 = 0.4 A, IB2 = − 0.4 A,
VCC = 50 V
80
0.3
1.0
0.2
MHz
µs
ton
Storage time
tstg
µs
Fall time
tf
µs
Note) : Rank classification
*
Rank
Q
P
O
hFE1
70 to 150
120 to 250 160 to 320
1
2SD2266
Power Transistors
PC Ta
IC VCE
IC VBE
20
15
10
5
4
3
2
1
0
6
5
4
3
1
0
VCE=4V
TC=25˚C
IB=40mA
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
25˚C
35mA
100˚C
TC=–25˚C
30mA
25mA
(1)
20mA
15mA
10mA
5mA
(2)
0
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
7
0
1
3
4
)
(
)
(
)
(
Base to emie VBE V
Ambient temperature Ta ˚C
Collector to emitter voltge VC
V
VCE(sat) IC
hFE
fT IC
100
104
1000
100
10
IC/IB=10
VCE=4V
VCE=12V
f=10MHz
TC=25˚C
30
10
103
102
10
1
TC=100˚C
3
1
TC=100˚C
–25˚
25˚C
0.3
0.1
2˚C
25˚C
1
0.03
0.01
0.1
0.01 0.03
0.0.03
.1
3
10
0.01 0.03
0.1
0.3
1
3
0
0.1
0.3
1
3
10
(
)
(
)
( )
Collector current IC A
Clector IC
A
Collector curreIC
A
Cob VCB
ton, tstg, tf IC
Area of safe operation (ASO)
1000
1000
100
10
100
10
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
VCC=50V
=0
1MHz
=25˚C
Non repetitive pulse
TC=25˚C
)
30
10
TC=25˚C
ICP
IC
t=1ms
3
1
tstg
DC
1
ton
tf
0.3
0.1
0.1
0.01
0.03
0.01
1
1
3
10
30
100 300 1000
0
1
2
3
4
5
6
7
)
8
1
3
10
30
100 300 1000
(
)
(
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
V
Collector current IC
A
ꢀ
Power Transistors
2SD2266
Rth(t) t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
04
( )
s
Time
t
3
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
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Electric Industrial Co., Ltd.
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