2SD814R [PANASONIC]
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SC-59, 3 PIN;型号: | 2SD814R |
厂家: | PANASONIC |
描述: | Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SC-59, 3 PIN 放大器 光电二极管 晶体管 |
文件: | 总3页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transistor
2SD0814, 2SD0814A (2SD814, 2SD814A)
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
Unit: mm
amplification
+0.10
0.40
ñ0.05
+0.10
-0.06
Features
High collector to emitter voltage VCEO
Low noise voltage NV.
0.16
ꢀ
ꢀ
3
.
ꢀ
ꢀ
Mini type package, allowing downsizing of the equipmnt and
automatic insertion through the tape packing and the magazine
packing.
()
1.9±0.1
+0.20
2.90
-0.05
Absolute Maximum Ratings (Ta=25˚C)
ꢀ
10°
Parameter
Symbol
atin
15
Unit
Collector to
2SD0814
2SD0814A
2SD081
V
V
base voltage
Collector to
185
150
VO
V
emitter voltage 2SD0814A
Emitter to base voltge
Peak collector curre
Collector current
185
VEO
ICP
IC
5
V
mA
mA
mW
˚C
1:Bae
2:Emitter
3:Collector
EIAJ:SC–59
Mini3-G1 Package
10
0
(2SD0814)
(2SD0814A)
Marking symbol : P
Collectpowssipation
Junion teure
Stoage emperature
PC
0
L
T
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
ꢀ
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector c
VCB = 100V, IE = 0
1
µA
Collector to em2SD0814
150
185
5
VCEO
IC = 100µA, IB = 0
V
V
voltage
2SD0814A
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
*
Forward current transfer ratio
hFE
VCE = 5V, IC = 10mA
90
330
1
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150
Collector output capacitance
Cob
2.3
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
Q
R
S
90 ~ 155
PQ
130 ~ 220
PR
185 ~ 330
PS
2SD0814
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
2SD0814A
LQ
LR
LS
556
Transistor
2SD0814, 2SD0814A
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
120
100
80
60
40
20
0
120
Ta=25˚C
VCE=10V
25˚C
100
80
60
40
IB=2.0mA
1.8mA
1.6mA
1.4A
1.2mA
Ta=75˚C
–25˚C
1.0mA
0.8mA
0.6mA
.2mA
40
0
0
20 40 60 80 100 120 140 160
0
4
8
10
1
0.4
0.8
2
1.6
2.0
(
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Colctor temitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
600
200
160
120
80
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
500
400
300
100
0
3
1
Ta=75˚C
25˚C
Ta=75˚C
–25˚C
0.3
.1
5˚C
–25
40
03
0.01
0
–1
0
0.3
1
1
30
00
0.
0.3
1
3
10
30
100
–3
–10
–30
–100
(
(
)
(
)
CourrenIC mA
Collector current IC mA
Emittr current IE mA
VCB
5
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
1
3
10
30
100
( )
V
Collector to base voltage VCB
557
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
相关型号:
2SD814S
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SC-59, 3 PIN
PANASONIC
2SD814TMG
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
2SD814TSK
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
©2020 ICPDF网 联系我们和版权申明