2SK3539 [PANASONIC]
Silicon N-channel MOSFET; 硅N沟道MOSFET
| 型号： | 2SK3539 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon N-channel MOSFET |
| 文件： | 总3页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
Unit: mm
+0.10
+0.1
–0.0
For switching
0.15
0.3
–0.05
3
■ Features
• High-speed switching
• Wide frequency band
• Gate protection diode built-in
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Drain-source voltage
Symbol
VDS
VGSO
ID
Rating
Unit
V
50
1: Gate
2: Source
3: Drain
Gate-source voltage (Drain open)
Drain current
7
100
V
mA
mA
mW
°C
EIAJ: SC-70
SMini3-G1 Package
Peak drain current
IDP
200
Power dissipation
PD
150
Marking Symbol: 5F
Channel temperature
Storage temperature
Tch
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VDSS
IDSS
Conditions
Min
Typ
Max
Unit
V
Drain-source surrender voltage
Drain-source cutoff current
Gate-Source cutoff current
Gate threshold voltage
ID = 10 µA, VGS = 0
VDS = 50 V, VGS = 0
VGS 7 V, VDS = 0
50
1.0
5.0
1.5
15
µA
µA
V
IGSS
=
Vth
ID = 1.0 µA, VDS = 3 V
0.9
20
1.2
8
Drain-source ON resistance
RDS(on)
ID = 10 mA, VGS = 2.5 V
Ω
ID = 10 mA, VGS = 4.0 V
6
12
Forward trancfer admitance
Yfs
ID = 10 mA, VDS = 3 V, f = 1 kHz
VDS = 3 V, VGS = 0, f = 1 MHz
60
12
mS
pF
Short-circuit forward transfer
capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time *
Coss
Crss
ton
7
pF
pF
ns
ns
3
VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω
VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω
200
200
Turn-off time *
toff
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : ton , toff test circuit
*
VOUT
470 Ω
90%
10%
VIN
VGS = 3.0 V
50 Ω
VDD = 3 V
VOUT
10%
90%
ton
toff
Publication date: January 2004
SJF00035BED
1
2SK3539
PD Ta
ID VDS
ID VGS
160
120
80
40
0
250
200
150
100
50
Ta = 25°C
VDS = 3 V
VGS = 2.0 V
60
40
20
0
Ta = −25°C
25°C
75°C
1.9 V
1.8 V
1.7 V
1.6 V
1.5 V
0
0
0
40
80
120
160
4
8
0
1
2
3
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Yfs VGS
RDS(on) VGS
VIN IO
10
60
50
40
30
20
10
0
VO = 5 V
ID = 10 mA
VDS = 3 V
f = 1 MHz
Ta = 25°C
TC = 25°C
0.16
0.12
0.08
0.04
0
1
25°C
Ta = 75°C
−25°C
10−1
1
10
102
103
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
(
)
Output current IO mA
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
SJF00035BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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