CNB1009 [PANASONIC]
Reflective Photosensors (Photo Reflectors); 反射式光敏（光反射器）
| 型号： | CNB1009 |
| 厂家： | 
PANASONIC |
| 描述： | Reflective Photosensors (Photo Reflectors) |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reflective Photosensors (Photo Reflectors)
CNB1009 (ON2173)
Reflective Photosensor
Overview
Unit : mm
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
12.0±0.3
2-ø2.3
1.0
(4.0)
(1.0)
1.0
19.0±0.3
2-9.5±0.2
ø2.2
Features
Fast response : tr, tf = 6 µs (typ.)
Small size, light weight
(15.5)
2
Applications
Detection of paper, film and cloth
3
Optical mark reading
Detection of coin and bill
Detection of position and edge
1
4
1
2
3
4
Start, end mark detection of magnetic tape
Pin connection
Absolute Maximum Ratings (Ta = 25˚C)
(Note) ( ) Dimension is reference
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
VR
IF
3
50
75
20
5
V
mA
mW
V
Input (Light
emitting diode)
*1
PD
Collector to emitter voltage VCEO
Emitter to collector voltage VECO
V
Output (Photo
transistor)
Collector current
IC
*2
30
100
mA
mW
˚C
*1
Input power derating ratio is
Collector power dissipation PC
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
Operating ambient temperature
Storage temperature
Topr –25 to +85
Temperature
Tstg –30 to +100 ˚C
1.34 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
VF
Conditions
min
typ
max
1.5
Unit
V
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
IF = 50mA
VR = 3V
1.2
Input
IR
10
µA
pF
µA
pF
µA
µs
characteristics
Ct
VR = 0V, f = 1MHz
50
Output characteristics Collector cutoff current
ICEO VCE = 10V
CC VCE = 10V, f= 1MHz
VCC = 10V, IF = 20mA, RL = 100Ω
tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 100Ω
0.2
Collector to emitter capacitance
5
500
6
*1
Collector current
Response time
IC
100
Transfer
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*2
0.3
V
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
Time required for the collector current to increase from
10% to 90% of its final value.
VCC
IC
*3
Time required for the collector
90%
IF
10%
current to decrease from 90%
to 10% of its initial value.
d = 5 mm
tr
tf
RL
Standard white paper (Reflective ratio 90%)
Note) The part number in the parenthesis shows conventional part number.
1
Reflective Photosensors (Photo Reflectors)
CNB1009
IF , IC — Ta
IF — VF
VF — Ta
60
50
40
30
20
10
0
60
50
40
30
20
10
0
1.6
1.2
0.8
0.4
0
Ta = 25˚C
IF
IF = 50mA
10mA
1mA
IC
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Ambient temperature Ta (˚C )
IC — IF
IC — VCE
IC — Ta
10 2
10
10 2
10
160
120
80
40
0
VCC = 5V
Ta = 25˚C
RL = 100Ω
Ta = 25˚C
VCC = 10V
IF = 20mA
RL = 100Ω
IF = 30mA
20mA
1
1
10mA
10 –1
10 –1
10 –2
10 –1
10 –2
10 –1
1
10
10 2
1
10
10 2
– 40 – 20
0
20
40
60
80 100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
ICEO — Ta
tr — IC
IC — d
10
1
10 3
10 2
800
600
400
200
0
VCC = 10V
Ta = 25˚C
VCE = 10V
VCC = 10V
Ta = 25˚C
RL = 100Ω
IF = 20mA
RL = 1kΩ
d
10 –1
10 –2
10 –3
10
1
500Ω
100Ω
10 –1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
Collector current IC (mA)
1
10
0
4
8
12
16
Ambient temperature Ta (˚C )
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-
cations satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life and after-
unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission from our
company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always
the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or
distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
相关型号：
CNB1011
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.04-0.243mA, 1-Channel, Square, Through Hole Mount, 2.29 X 2.90 MM, 0.88 MM HEIGHT, ROHS COMPLIANT, ULTRAMINIATURE, 4 PIN
PANASONIC
CNB1302Q
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.09-0.22mA, 1-Channel, Rectangular, Through Hole Mount, 2.70 X 3.40 MM, 1.50 MM HEIGHT, ULTRAMINIATURE, PLASTIC, PRSMW104-001, 4 PIN
PANASONIC
CNB1302R
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.18-0.44mA, 1-Channel, Rectangular, Through Hole Mount, 2.70 X 3.40 MM, 1.50 MM HEIGHT, ULTRAMINIATURE, PLASTIC, PRSMW104-001, 4 PIN
PANASONIC
CNB1302S
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.36-0.88mA, 1-Channel, Rectangular, Through Hole Mount, 2.70 X 3.40 MM, 1.50 MM HEIGHT, ULTRAMINIATURE, PLASTIC, PRSMW104-001, 4 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明