MA3D798 [PANASONIC]
Silicon epitaxial planar type (cathode common); 硅外延平面型（阴极常见）
| 型号： | MA3D798 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type (cathode common) |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3D798
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
4.6 0.2
9.9 0.3
2.9 0.2
I Features
φ 3.2 0.1
•
•
•
•
TO-220D package
Allowing to rectify under (IF(AV) = 20 A) condition
Cathode common dual type
1.4 0.2
1.6 0.2
2.6 0.1
Low VF (forward voltage) type: VF < 0.47 V (at IF = 10 A)
0.8 0.1
0.55 0.15
I Absolute Maximum Ratings Ta = 25°C
2.54 0.3
3
5.08 0.5
1
2
Parameter
Symbol
VRRM
IF(AV)
IFSM
Rating
30
Unit
V
Repetitive peak reverse voltage
Average forward current
20
A
1 : Anode
2 : Cathode (common)
3 : Anode
Non-repetitive peak forward
surge current*
120
A
TO-220D package
Junction temperature
Storage temperature
Tj
−40 to +125
−40 to +125
°C
°C
Tstg
Note)
* : Half sine-wave; 10 ms/cycle
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
High voltage rectification
Symbol
IR
Conditions
Min
Typ
Max
5
Unit
mA
V
VR = 30 V
IF = 10 A
VF
0.47
3
Rth(j-c)
Direct current (between junction and case)
°C/W
Note) Rated input/output frequency: 150 MHz
1
MA3D798
Schottky Barrier Diodes (SBD)
IF VF
IR Ta
IR VR
2
3
2
2
10
10
10
10
VR = 30 V
20 V
10 V
75°C 25°C
Ta = 125°C
– 20°C
10
10
1
Ta = 125°C
1
10
75°C
25°C
−1
−1
10
1
10
−2
−1
−2
10
10
10
–3
−2
−3
−40
10
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
0
40
80
120 160 200
(
)
(
)
V
(
)
Forward voltage VF
V
Reverse voltage VR
Ambient temperature Ta °C
VF Ta
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IF = 10 A
5 A
1 A
−40
0
40
80
120 160 200
(
)
Ambient temperature Ta °C
2
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