MA3DF46 [PANASONIC]
Rectifier Diode, 1 Phase, 1 Element, 20A, 370V V(RRM), Silicon, TO-220AB, TO-220D-A1, 3 PIN;
| 型号： | MA3DF46 |
| 厂家： | 
PANASONIC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 370V V(RRM), Silicon, TO-220AB, TO-220D-A1, 3 PIN 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA3DF46
Silicon mesa type
For high frequency recification
For plasma display panel drive
Package
ꢀCode
Features
Super high speed switching characteristic (trr = 15 ns typ.)
Soft recovery
TO-220D-A1
ꢀPin Name
1: Anode
Absolute Maximum Ratings T = 25°C
a
2: athode
e
Parameter
Symbol
VRRM
VRSM
IF(AV)
IFRM
Rating
370
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage *
1
Marking Symbol: MA3DF46
ꢀInternal Connection
430
V
2
Forward current (Average) *
A
3
Repetitive peak forward current *
A
4
Non-repetitive peak forward surge current *
IFS
100
A
Junction temperature
Tj
150
°C
°C
1
2
3
Storage temperature
T
st
–40 to +50
Note) 1: 60 Hz half-sine wave(Irepeave, RMS voltage 37V)
*
2: TC = 25°C
*
*
*
3: Pulse width < 10 msPeak valuof the sine wave. f repeative, RMS current < 20 A)
4: 50 Hz sine wave cycl(Non-repetitive rent
Electcal Charaistics T = 25°C±3°
a
Para
Fward voltge
Symb
VF
Conditions
Min
Typ
Max
1.65
10
Unit
V
IF = 20A
1.45
Revere curren
IRRM
VRRM = 370 V
mA
1
*
trr
trr
IF = 0.5A, IR = 1.0A, Irr = 0.25A
15
30
23
Reverse recover
ns
*
IF = 40A, di/dt = –200A/ms, Irr = IR × 0.5A
35
Thermal resistance (j-c
Thermal resistance (j-a)
Rth(j-c)
Rth(j-a)
3.0
63
°C/W
°C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD IS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. 1: R-loadtrr measurement circuit
*
50 Ω
50 Ω
trr
D.U.T.
IF
0.25 × IR
5.5 Ω
IR
2: L-loadtrr measurement circuit
*
230 µH
D.U.T.
Publication date: May 2009
SKJ00027AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3DF46
TO-220D-A1
Unit: mm
4.6 ±0.2
2.9 ±0.2
9.9 ±0.3
φ3.2 ±0.1
1.±0.2
1.6 ±0.2
2.6 ±0.1
0.8 ±0.1
0.40 ±0.05
2.54 ±0.3
5.08 ±0.5
1
2
3
2
SKJ00027AED
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
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