MA3U749 [PANASONIC]
Silicon epitaxial planar type (cathode common); 硅外延平面型（阴极常见）
| 型号： | MA3U749 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type (cathode common) |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3U749
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
6.5 0.1
5.3 0.1
4.35 0.1
2.3 0.1
0.5 0.1
I Features
•
•
•
Surface mounting type small U-type package
Low forward rise voltage VF
Cathode common dual type
1.0 0.1
0.1 0.05
0.93 0.1
0.5 0.1
0.75 0.1
I Absolute Maximum Ratings Ta = 25°C
2.3 0.1
4.6 0.1
Parameter
Symbol
VRRM
IF(AV)
IFSM
Rating
40
Unit
V
Repetitive peak reverse voltage
Average forward current
5
mA
A
1 : Anode
1
2
3
2 : Cathode
(Common)
3 : Anode
Non-repetitive peak forward
surge current*
40
U-Type Package
Junction temperature
Storage temperature
Tj
−40 to +125
−40 to +125
°C
°C
Tstg
Note)
* : Half sine-wave: 10 ms/cycle
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Thermal resistance*
Symbol
IR
Conditions
Min
Typ
Max
Unit
mA
V
VR = 40 V, TC = 25°C
IF = 2.5 A, TC = 25°C
Between junction and case
1
VF
0.55
12.5
Rth(j-c)
°C/W
Note) 1. Rated input/output frequency: 1 000 MHz
2. * : TC = 25°C
1
MA3U749
Schottky Barrier Diodes (SBD)
IF VF
75°C 25°C
IR VR
VF Ta
4
5
10
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta = 125°C
− 20°C
3
4
10
10
Ta = 125°C
IF = 5 A
2
3
10
10
75°C
2.5 A
1 A
2
10
1
10
25°C
10
−1
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
( )
Reverse voltage VR V
20
30
40
50
60
−40
0
40
80
120 160 200
(
)
Forward voltage VF
V
(
)
Ambient temperature Ta °C
IR Ta
Ct VR
5
4
3
2
800
700
600
500
400
300
200
100
0
10
10
10
10
f = 1 MHz
Ta = 25°C
VR = 45 V
20 V
10 V
10
1
0
10
20
30
40
50
60
−40
0
40
80
120 160 200
( )
V
(
)
Reverse voltage VR
Ambient temperature Ta °C
2
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