MA6X556 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA6X556 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PIN Diodes
MA6X556
Silicon epitaxial planar type
Unit : mm
2.8 −+ 00..32
For UHF and SHF bands AGC
0.65 0.15
1.5 −+ 00..2055
0.65 0.15
1
2
6
I Features
5
•
•
•
Small diode capacitance CD
4
3
Large variable range of forward dynamic resistance rf
Mini type package, allowing downsizing of equipment and auto-
matic insertion through the taping package and magazine package
I Absolute Maximum Ratings Ta = 25°C
0.1 to 0.3
0.4 0.2
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Power dissipation
Symbol
VR
Rating
40
Unit
V
VRM
IF
45
V
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
4 : Anode 3
5 : Anode 2
6 : Anode 1
100
mA
mW
°C
PD
150
Mini Type Package (6-pin)
Operating ambient temperature
Storage temperature
Topr
Tstg
−25 to +85
−55 to +150
Marking Symbol: M2T
Internal Connection
°C
6
5
4
1
2
3
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Symbol
IR
Conditions
Min
Typ
Max
100
1.2
Unit
nA
V
VR = 40 V
IF = 100 mA
VF
1.05
0.3
2
CD
VR = 15 V, f = 1 MHz
IF = 10 µA, f = 100 MHz
IF = 10 mA, f = 100 MHz
0.5
pF
kΩ
Ω
Forward dynamic resistance*
rf1
1
rf2
6
10
Note) 1．Rated input/output frequency: 100 MHz
2. Each characteristic is a standard for individual diode
ꢀ
3．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA6X556
PIN Diodes
IF VF
IR Ta
CD VR
1 000
100
10
2
1
100
10
Ta = 25°C
VR = 40 V
f = 1 MHz
Ta = 25°C
0.5
0.3
0.2
1
0.1
1
0.1
0.01
0.05
0.03
0.02
0.1
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12 16 20 24 28 32 36 40
0
20 40 60 80 100 120 140 160
(
)
(
)
(
)
Forward voltage VF
V
Reverse voltage VR
V
Ambient temperature Ta °C
rf IF
4
3
2
10
10
10
f = 100 MHz
Ta = 25°C
10
1
0.01
0.1
1
10
(
)
Forward current IF mA
2
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