MA7D49A [PANASONIC]

Silicon epitaxial planar type (cathode common); 硅外延平面型(阴极常见)
MA7D49A
型号: MA7D49A
厂家: PANASONIC    PANASONIC
描述:

Silicon epitaxial planar type (cathode common)
硅外延平面型(阴极常见)

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Schottky Barrier Diodes (SBD)  
MA3D749, MA3D749A  
Silicon epitaxial planar type (cathode common)  
Unit : mm  
4.6 0.2  
For switching power supply  
9.9 0.3  
2.9 0.2  
I Features  
φ 3.2 0.1  
Low forward rise voltage VF  
TO-220D (Full-pack package) with high dielectric breakdown  
voltage > 5.0 kV  
1.4 0.2  
1.6 0.2  
2.6 0.1  
Easy-to-mount, caused by its V cut lead end  
0.8 0.1  
0.55 0.15  
I Absolute Maximum Ratings Ta = 25°C  
2.54 0.3  
3
5.08 0.5  
1
2
Parameter  
Symbol  
VRRM  
Rating  
40  
Unit  
V
MA3D749  
Repetitive peak  
reverse voltage  
MA3D749A  
45  
1 : Anode  
2 : Cathode  
3 : Anode  
Average forward current  
IF(AV)  
IFSM  
5
A
A
Non-repetitive peak forward  
surge current*  
90  
TO-220D Package  
Internal Connection  
Junction temperature  
Storage temperature  
Tj  
40 to +125  
40 to +125  
°C  
°C  
Tstg  
Note)  
* : Half sine-wave; 10 ms/cycle  
1
2
3
I Electrical Characteristics Ta = 25°C  
Parameter  
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
1
Unit  
mA  
Reverse current (DC)  
MA3D749  
VR = 40 V, TC = 25°C  
VR = 45 V, TC = 25°C  
MA3D749A  
1
0.55  
3
Forward voltage (DC)  
Thermal resistance  
VF  
IF = 2.5 A, TC = 25°C  
V
Rth(j-c)  
Direct current (between junction and case)  
°C/W  
Note) Rated input/output frequency: 200 MHz  
1
MA3D749, MA3D749A  
Schottky Barrier Diodes (SBD)  
IF VF  
75°C 25°C  
IR VR  
VF Ta  
5
10  
10  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Ta = 125°C  
20°C  
4
10  
1
Ta = 125°C  
IF = 5 A  
3
1  
10  
10  
75°C  
2.5 A  
1 A  
2
2  
10  
10  
25°C  
3  
10  
10  
4  
1
10  
0
10  
20  
30  
40  
50  
60  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
40  
0
40  
80  
120 160 200  
(
)
Reverse voltage VR  
V
(
)
Forward voltage VF  
V
(
)
Ambient temperature Ta °C  
IR Ta  
PD(AV) IF(AV)  
Ct VR  
5
4
3
2
8
7
6
5
4
3
2
1
0
800  
700  
600  
500  
400  
300  
200  
100  
0
10  
10  
10  
10  
f = 1 MHz  
Ta = 25°C  
t0  
t1  
VR = 45 V  
20 V  
10 V  
t0 / t1 = 1/6  
1/3  
1/2  
DC  
10  
1
0
1
2
3
4
5
6
0
10  
20  
30  
40  
50  
60  
40  
0
40  
80  
120 160 200  
( )  
Average forward current IF(AV) A  
(
)
Reverse voltage VR  
V
(
)
Ambient temperature Ta °C  
IF(AV) TC  
8
7
6
5
4
3
2
1
t0  
t1  
t0 / t1 = 1/2  
1/3  
DC  
1/6  
0
20  
40  
60  
80  
100 120 140  
(
)
Case temperature TC °C  
2

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