PNZ108F [PANASONIC]
Silicon NPN Phototransistors; 硅NPN光电晶体管
| 型号： | PNZ108F |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN Phototransistors |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
Unit : mm
Glass window
PNZ107F
ø4.6±0.15
For optical control systems
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : tr = 8 µs (typ.)
2-ø0.45±0.05
2.54±0.25
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
1.0
±
0.2
45
±
0.15
3˚
±
1.0
2
1
Absolute Maximum Ratings (Ta = 25˚C)
1: Emitter
ø5.75 max.
2: Collector
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Symbol
Ratings
Unit
V
VCEO
20
*
VCBO
30
V
Unit : mm
PNZ108F
ø4.6±0.15
VECO
3
V
Glass window
*
VEBO
5
30
V
IC
PC
mA
mW
˚C
˚C
Collector power dissipation
Operating ambient temperature
Storage temperature
150
Topr
Tstg
–25 to +85
–30 to +100
3-ø0.45±0.05
2.54±0.25
* PNZ108F only
1.0
±
0.2
45
±
0.15
3˚
±
1.0
3
1
2
1: Emitter
2: Base
ø5.75 max.
3: Collector
1
PNZ107F, PNZ108F
Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Dark current
Symbol
ICEO
ICE(L)
λP
Conditions
min
typ
max Unit
VCE = 10V
0.05
2
4
µA
mA
nm
deg.
µs
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
VCE = 10V, L = 100 lx*1
0.4
VCE = 10V
900
40
8
θ
tr*2
tf*2
Measured from the optical axis to the half power point
VCC = 10V, ICE(L) = 5mA
RL = 100Ω
Fall time
9
µs
Collector saturation voltage
VCE(sat) ICE(L) = 1mA, L = 1000 lx*1
0.3
0.6
V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
VCC
td : Delay time
(Input pulse)
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
90%
10%
Sig.OUT
(Output pulse)
td
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
50Ω
RL
tr
tf
PC — Ta
I
CE(L) — VCE
ICE(L) — L
200
160
120
80
12
10 2
10
V
CE = 10V
Ta = 25˚C
T = 2856K
Ta = 25˚C
T = 2856K
1000 lx
900 lx
800 lx 700 lx
L =
1500 lx
10
8
600 lx
500 lx
400 lx
300 lx
1
6
4
200 lx
100 lx
10 –1
40
2
50 lx
10 lx
0
– 20
0
10 –2
0
20
40
60
80
100
0
4
8
12
16
20
24
1
10
10 2
10 3
Ambient temperature Ta (˚C )
Collector to emitter voltage VCE (V)
Illuminance L (lx)
2
Phototransistors
PNZ107F, PNZ108F
I
CEO — Ta
I
CE(L) — Ta
Spectral sensitivity characteristics
10 2
10
10
100
80
60
40
20
0
VCE = 10V
L = 100 lx
T = 2856K
VCE = 10V
Ta = 25˚C
VCE = 10V
1
1
10 –1
10 –2
10 –3
10 –1
– 40
– 20
0
20
40
60
80
100
0
40
80
120
200
400
600
800
1000
1200
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Wavelength λ (nm)
Directivity characteristics
tr — ICE(L)
tf — ICE(L)
0˚
100
10˚
20˚
VCC = 10V
Ta = 25˚C
VCC = 10V
Ta = 25˚C
10 4
10 3
10 4
10 3
90
80
70
60
50
40
30
20
30˚
40˚
10 2
10
10 2
10
RL = 1kΩ
RL = 1kΩ
50˚
60˚
500Ω
100Ω
500Ω
100Ω
70˚
80˚
90˚
1
1
10 –1
10 –1
10 –2
10 –1
1
10
10 2
10 –2
10 –1
1
10
10 2
Collector photo current ICE(L) (mA)
Collector photo current ICE(L) (mA)
3
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