XN06115 [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74, 6 PIN;


型号：	XN06115
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74, 6 PIN 开关光电二极管晶体管
文件：	总2页 (文件大小：31K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Composite Transistors

XN6115

Silicon PNP epitaxial planer transistor

Unit: mm

2.8⁺^–0⁰^.^.³²

For switching/digital circuits

0.65±0.15

1.5⁺^–0⁰^.^.⁰²⁵⁵

0.65±0.15

Features

■

●

Two elements incorporated into one package.

(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UN1115 × 2 elements

■

0.1 to 0.3

●

0.4±0.2

1 : Collector (Tr1)

2 : Base (Tr1)

3 : Collector (Tr2)

4 : Base (Tr2)

5 : Emitter (Tr2)

6 : Emitter (Tr1)

EIAJ : SC–74

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Mini Type Package (6–pin)

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Rating

element

–50

Marking Symbol: 6X

Internal Connection

–100

˚C

P_T

300

Overall Junction temperature

Storage temperature

T_j

150

Tr1

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

–50

typ

max

Unit

Collector to base voltage

I_C= –10µA, I_E= 0

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= –2mA, I_B= 0

V_CB= –50V, I_E= 0

V_CE= –50V, I_B= 0

V_EB= –6V, I_C= 0

– 0.1

– 0.5

– 0.01

460

µA

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Forward current transfer h_FEratio

V_CE= –10V, I_C= –5mA

160

0.5

h_FE(small/large)^*1V_CE= –10V, I_C= –5mA

0.99

Collector to emitter saturation voltage V_CE(sat)

I_C= –10mA, I_B= – 0.3mA

– 0.25

– 0.2

Output voltage high level

Output voltage low level

Transition frequency

V_OH

V_OL

f_T

V_CC= –5V, V_B= – 0.5V, R_L= 1kΩ

V_CC= –5V, V_B= –2.5V, R_L= 1kΩ

V_CB= –10V, I_E= 1mA, f = 200MHz

–4.9

Input resistance

R₁

–30%

+30%

kΩ

^*1Ratio between 2 elements

Composite Transistors

XN6115

P_T— Ta

500

400

300

200

100

120

160

)

(

Ambient temperature Ta ˚C

I_C— V_CE

V_CE(sat)— I_C

h_FE— I_C

–100

–160

–140

–120

–100

–80

–60

–40

–20

400

300

200

100

I_C/I_B=10

Ta=25˚C

V_CE=–10V

I_B=–1.0mA

–30

–10

–0.9mA

–0.8mA

–0.7mA

–0.6mA

Ta=75˚C

–3

–1

–0.5mA

–0.4mA

25˚C

–0.3mA

–0.2mA

Ta=75˚C

–0.3

–0.1

–25˚C

25˚C

–0.1mA

–0.03

–0.01

–25˚C

–0.1 –0.3

–1

–3

–10 –30 –100

–2

–4

–6

–8

–10 –12

–1

–3

–10 –30 –100 –300 –1000

(

)

(

)

Collector current I_CmA

(

)

Collector to emitter voltage V_CE

Collector current I_CmA

C_ob— V_CB

I_O— V_IN

V_IN— I_O

–10000

–100

V_O=–5V

Ta=25˚C

V_O=–0.2V

Ta=25˚C

f=1MHz

I_E=0

Ta=25˚C

–3000

–1000

–30

–10

–300

–100

–3

–1

–30

–10

–0.3

–0.1

–3

–1

–0.03

–0.01

–0.1 –0.3

–1

–3

–10 –30 –100

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

–0.1 –0.3

–1

–3

–10 –30 –100

(

)

Collector to base voltage V_CB

( )

Input voltage V_IN

(

)

Output current I_OmA

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