XN6543 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管
| 型号： | XN6543 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer transistor |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN6543
Silicon NPN epitaxial planer transistor
Unit: mm
2.8+–00..32
For low-noise amplification (2GHz band)
0.65±0.15
1.5+–00..0255
0.65±0.15
1
2
6
Features
■
5
4
●
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
3
●
Basic Part Number of Element
2SC3904 × 2 elements
■
●
0.1 to 0.3
0.4±0.2
Absolute Maximum Ratings (Ta=25˚C)
■
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
15
Mini Type Package (6–pin)
Rating
of
element
10
V
2
65
V
Marking Symbol: 9Y
Internal Connection
mA
mW
˚C
PT
200
Overall Junction temperature
Storage temperature
Tj
150
Tr1
6
1
2
3
Tstg
–55 to +150
˚C
5
4
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
min
typ
max
1
Unit
µA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Transition frequency
VCB = 10V, IE = 0
VEB = 1V, IC = 0
1
µA
VCE = 8V, IC = 20mA
50
0.5
7.0
120
0.99
8.5
0.6
9
300
hFE (small/large)*1 VCE = 8V, IC = 20mA
fT
VCE = 8V, IC = 20mA
GHz
pF
Collector output capacitance
Forward transfer gain
Power gain
Cob
| S21e
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 20mA, f = 1.5GHz
VCE = 8V, IC = 20mA, f = 1.5GHz
VCE = 8V, IC = 7mA, f = 1.5GHz
1.0
3.0
2
|
7
dB
GUM
NF
10
dB
Noise figure
2.2
dB
*1 Ratio between 2 elements
1
Composite Transistors
XN6543
PT — Ta
IC — VCE
IC — VBE
240
30
25
20
15
10
5
120
100
80
60
40
20
0
Ta=25˚C
VCE=8V
IB=250µA
200
160
120
80
25˚C
200µA
150µA
100µA
Ta=75˚C
–25˚C
40
50µA
0
0
0
40
80
120
160
)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
(
( )
V
( )
V
Ambient temperature Ta ˚C
Base to emitter voltage VBE
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
10
1
240
200
160
120
80
12
10
8
IC/IB=10
VCE=8V
f=1.5GHz
Ta=25˚C
VCE=8V
Ta=75˚C
Ta=75˚C
–25˚C
0.1
6
25˚C
25˚C
4
–25˚C
0.01
40
2
0.001
0
0
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
1
3
10
30
100
(
)
(
)
Collector current IC mA
Collector current IC mA
(
)
Collector current IC mA
Cob — VCB
GUM — IC
NF — IC
1.2
1.0
0.8
0.6
0.4
0.2
0
12
10
8
6
5
4
3
2
1
0
VCE=8V
f=1.5GHz
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
VCE=8V
f=1.5GHz
Ta=25˚C
6
4
2
0
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
V
)
(
)
(
)
Collector current IC mA
Collector to base voltage VCB
Collector current IC mA
2
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