PJD13N10A [PANJIT]

100V N-Channel Enhancement Mode MOSFET;
PJD13N10A
型号: PJD13N10A
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

100V N-Channel Enhancement Mode MOSFET

文件: 总8页 (文件大小:374K)
中文:  中文翻译
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PPJD13N10A  
100V N-Channel Enhancement Mode MOSFET  
100 V  
13A  
Voltage  
Current  
Features  
RDS(ON) , VGS@10V, ID@6.5A<115m  
RDS(ON) , VGS@4.5V, ID@4A<120mΩ  
Advanced Trench Process Technology  
TO-252AA  
High density cell design for ultra low on-resistance  
Lead free in compliance with EU RoHS 2011/65/EU  
directive  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
Mechanical Data  
Case: TO-252AA Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0104 ounces, 0.297 grams  
Marking: D13N10A  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
100  
+20  
13  
V
V
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current (Note 1)  
Power Dissipation  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
ID  
8
A
IDM  
PD  
52  
41  
W
16  
2.9  
A
A
Continuous Drain Current  
Power Dissipation  
ID  
2.3  
2.0  
PD  
W
1.3  
Single Pulse Avalanche Energy(Note 6)  
EAS  
TJ,TSTG  
RθJC  
6.1  
mJ  
oC  
Operating Junction and Storage Temperature Range  
-55~150  
3.05  
62.5  
Junction to Case  
Typical Thermal Resistance(Note 4,5)  
Junction to Ambient  
oC/W  
RθJA  
Limited only By Maximum Junction Temperature  
September 3,2015-REV.00  
Page 1  
PPJD13N10A  
Electrical Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNITS  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
VGS(th)  
VGS=0V,ID=250uA  
VDS=VGS, ID=250uA  
VGS=10V,ID=6.5A  
VGS=4.5V,ID=4A  
100  
-
1.76  
92  
95  
-
-
V
V
1.0  
2.5  
-
-
-
-
115  
120  
1.0  
Drain-Source On-State Resistance  
RDS(on)  
mΩ  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Dynamic (Note 7)  
IDSS  
IGSS  
VDS=100V,VGS=0V  
VGS=+20V,VDS=0V  
uA  
nA  
-
+100  
Total Gate Charge  
Qg  
Qgs  
-
-
-
-
-
-
-
-
-
-
20  
3.2  
3.6  
1413  
60  
-
-
-
-
-
-
-
-
-
-
VDS=50V, ID=2A,  
VGS=10V (Note 1,2)  
Gate-Source Charge  
Gate-Drain Charge  
nC  
pF  
Qgd  
Input Capacitance  
Ciss  
Coss  
Crss  
VDS=25V, VGS=0V,  
f=1.0MHZ  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
34  
td  
(on)  
18  
VDD=50V, ID=1A,  
VGS=10V,  
RG=3.3Ω (Note 1,2)  
Turn-On Rise Time  
t
4.3  
41  
r
ns  
Turn-Off Delay Time  
td(off)  
tf  
Turn-Off Fall Time  
4.2  
Drain-Source Diode  
Maximum Continuous Drain-Source  
Diode Forward Current  
Diode Forward Voltage  
IS  
---  
-
-
-
13  
1
A
V
VSD  
IS=1A,VGS=0V  
0.73  
NOTES :  
1. Pulse width<300us, Duty cycle<2%  
2. Essentially independent of operating temperature typical characteristics.  
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency  
and duty cycles to keep initial TJ =25°C.  
4. The maximum current rating is package limited.  
5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is  
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper.  
6. The test condition is L=0.1mH, IAS=11A, VDD=25V, VGS=10V  
7. Guaranteed by design, not subject to production testing.  
September 3,2015-REV.00  
Page 2  
PPJD13N10A  
TYPICAL CHARACTERISTIC CURVES  
Fig.1 Output Characteristics  
Fig.3 On-Resistance vs. Drain Current  
Fig.5 On-Resistance Variation with VGS.  
Fig.2 Transfer Characteristics  
Fig.4 On-Resistance vs. Junction temperature  
Fig.6 Source-Drain Diode Forward Voltage  
September 3,2015-REV.00  
Page 3  
PPJD13N10A  
TYPICAL CHARACTERISTIC CURVES  
Fig.7 Gate-Charge Characteristics  
Fig.9 Threshold Voltage Variation with Temperature  
Fig.11 Maximum Safe Operating Area  
Fig.8 Breakdown Voltage Variation vs. Temperature  
Fig.10 Capacitance vs. Drain-Source Voltage  
September 3,2015-REV.00  
Page 4  
PPJD13N10A  
TYPICAL CHARACTERISTIC CURVES  
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width  
September 3,2015-REV.00  
Page 5  
PPJD13N10A  
Packaging Information  
.
TO-252 Dimension  
Unit: mm  
September 3,2015-REV.00  
Page 6  
PPJD13N10A  
PART NO PACKING CODE VERSION  
Part No Packing Code  
Package Type  
Packing type  
Marking  
Version  
PJD13N10A_L2_00001  
TO-252AA  
3,000pcs / 13reel  
D13N10A  
Halogen free  
MOUNTING PAD LAYOUT  
TO-252AA  
Unit: mm  
September 3,2015-REV.00  
Page 7  
PPJD13N10A  
Disclaimer  
Reproducing and modifying information of the document is prohibited without permission from Panjit  
International Inc..  
Panjit International Inc. reserves the rights to make changes of the content herein the document anytime  
without notification. Please refer to our website for the latest document.  
Panjit International Inc. disclaims any and all liability arising out of the application or use of any product  
including damages incidentally and consequentially occurred.  
Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for  
particular purpose, non-infringement and merchantability.  
Applications shown on the herein document are examples of standard use and operation. Customers are  
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no  
representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
The products shown herein are not designed and authorized for equipments requiring high level of reliability or  
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical  
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these  
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International  
Inc. for any damages resulting from such improper use or sale.  
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when  
complaining.  
September 3,2015-REV.00  
Page 8  

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