BYV29B-500 [NXP]

Rectifier diodes ultrafast; 整流二极管超快
BYV29B-500
型号: BYV29B-500
厂家: NXP    NXP
描述:

Rectifier diodes ultrafast
整流二极管超快

整流二极管
文件: 总5页 (文件大小:45K)
中文:  中文翻译
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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV29B-500  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
VR = 500 V  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
k
1
a
2
VF 1.03 V  
IF(AV) = 9 A  
trr 60 ns  
GENERAL DESCRIPTION  
PINNING  
SOT404 (D2-PAK)  
Ultra-fast, epitaxial rectifier diodes  
intended for use as output rectifiers  
in high frequency switched mode  
power supplies.  
PIN  
DESCRIPTION  
no connection  
cathode1  
tab  
1
2
The BYV29B-500 is supplied in the  
SOT404  
package.  
surface  
mounting  
3
anode  
2
tab  
cathode  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
VRWM  
VR  
IF(AV)  
IFRM  
IFSM  
Peak repetitive reverse voltage  
-
-
-
-
-
-
-
500  
500  
500  
9
V
V
V
A
A
A
A
Crest working reverse voltage  
Continuous reverse voltage  
Average forward current2  
square wave; δ = 0.5; Tmb 123 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb 123 ˚C  
Non-repetitive peak forward  
current.  
18  
t = 10 ms  
t = 8.3 ms  
sinusoidal; with reapplied VRRM(max)  
100  
110  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to minimum footprint, FR4 board.  
ambient  
-
-
2.5  
K/W  
Rth j-a  
-
50  
-
K/W  
1 it is not possible to make a connection to pin 2 of the SOT404 package  
2 Neglecting switching and reverse current losses.  
September 2001  
1
Rev 1.000  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV29B-500  
ELECTRICAL CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VF  
Forward voltage  
IF = 8 A; Tj = 150˚C  
IF = 8 A  
-
-
-
-
-
-
0.90  
1.05  
1.20  
2.0  
1.03  
1.25  
1.40  
50  
V
V
IF = 20 A  
V
IR  
Reverse current  
VR = VRRM  
µA  
mA  
nC  
VR = VRRM; Tj = 100 ˚C  
IF = 2 A to VR 30 V;  
dIF/dt = 20 A/µs  
IF = 1 A to VR 30 V;  
dIF/dt = 100 A/µs  
0.1  
0.35  
60  
Qs  
trr  
Reverse recovery charge  
Reverse recovery time  
40  
-
-
-
50  
4.0  
2.5  
60  
5.5  
-
ns  
A
Irrm  
Vfr  
Peak reverse recovery current IF = 10 A to VR 30 V;  
dIF/dt = 50 A/µs; Tj = 100˚C  
Forward recovery voltage  
IF = 10 A; dIF/dt = 10 A/µs  
V
Tmb(max) / C  
D = 1.0  
PF / W  
15  
dI  
F
112.5  
125  
I
Vo = 0.8900 V  
F
Rs = 0.0190 Ohms  
dt  
0.5  
t
rr  
10  
0.2  
time  
0.1  
5
137.5  
150  
t
T
p
tp  
I
D =  
Q
s
100%  
10%  
I
t
I
R
T
rrm  
0
0
5
10  
15  
IF(AV) / A  
Fig.1. Definition of trr, Qs and Irrm  
Fig.3. Maximum forward dissipation PF = f(IF(AV));  
square wave where IF(AV) =IF(RMS) x D.  
Tmb(max) / C  
a = 1.57  
PF / W  
I
12  
10  
8
120  
125  
130  
135  
140  
F
F
Vo = 0.89V  
Rs = 0.019 Ohms  
1.9  
2.2  
2.8  
4
time  
time  
6
V
4
V
2
145  
150  
fr  
V
F
0
0
2
4
6
8
10  
IF(AV) / A  
Fig.2. Definition of Vfr  
Fig.4. Maximum forward dissipation PF = f(IF(AV));  
sinusoidal current waveform where a = form  
factor = IF(RMS) / IF(AV)  
.
September 2001  
2
Rev 1.000  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV29B-500  
trr / ns  
1000  
IF / A  
30  
20  
10  
0
Tj=150 C  
Tj=25 C  
IF=10 A  
1A  
100  
10  
typ  
max  
Tj = 25 C  
Tj = 100C  
1
1
100  
10  
dIF/dt (A/us)  
0.5  
1.5  
0
1
2
VF / V  
Fig.5. Maximum trr at Tj = 25˚C and 100˚C  
Fig.7. Typical and maximum forward characteristic  
IF = f(VF); parameter Tj  
Qs / nC  
1000  
Irrm / A  
10  
IF=10A  
IF = 10 A  
100  
1
IF=1A  
2 A  
0.1  
10  
Tj = 25 C  
Tj = 100C  
0.01  
1
10  
100  
1
1.0  
10  
100  
-dIF/dt (A/us)  
-dIF/dt (A/us)  
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.  
Fig.8. Maximum Qs at Tj = 25˚C  
Transient thermal impedance, Zth j-mb (K/W)  
10  
1
0.1  
p
t
p
t
P
0.01  
D
D =  
T
t
T
0.001  
1us  
10us 100us 1ms  
10ms 100ms  
1s  
10s  
pulse width, tp (s)  
Fig.9. Transient thermal impedance Zth j-mb= f(tp)  
September 2001  
3
Rev 1.000  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV29B-500  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 1.4 g  
4.5 max  
1.4 max  
10.3 max  
11 max  
15.4  
2.5  
0.85 max  
(x2)  
0.5  
2.54 (x2)  
Fig.10. SOT404 : centre pin connected to mounting base.  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
11.5  
9.0  
17.5  
2.0  
3.8  
5.08  
Fig.11. SOT404 : soldering pattern for surface mounting.  
Notes  
1. Epoxy meets UL94 V0 at 1/8".  
September 2001  
4
Rev 1.000  
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV29B-500  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS3  
PRODUCT  
DEFINITIONS  
STATUS4  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
Production  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in ordere to improve the design and supply the best possible  
product  
Product data  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2001  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
3 Please consult the most recently issued datasheet before initiating or completing a design.  
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
September 2001  
5
Rev 1.000  

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