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元器件品牌
NE5517N
[PHILIPS]
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16,;
元器件型号：
NE5517N
生产厂家：
PHILIPS SEMICONDUCTORS
描述和应用：
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16,
放大器 光电二极管
PDF文件：
总1页 (文件大小：32K)
下载文档：
下载PDF数据表文档文件
型号参数：NE5517N参数
查看货源
NE5517NG
Dual Operational Transconductance Amplifier
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26
ONSEMI
NE5517NSIIB
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16
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0
PHILIPS
NE5520279A
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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43
CEL
NE5520279A
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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NEC
NE5520279A
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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95
NEC
NE5520279A-A
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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0
NEC
NE5520279A-T1
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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33
NEC
NE5520279A-T1
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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26
NEC
NE5520279A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, 79A, 4 PIN
Warning
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0
NEC
NE5520279A-T1-A
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
Warning
: Undefined variable $rtag in
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35
CEL
NE5520379A
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
Warning
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104
CEL
NE5520379A
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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2
NEC
NE5520379A-A
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
NE5520379A-T1
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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0
CEL
NE5520379A-T1A
暂无描述
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CEL
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