TEA5570N [NXP]

IC AM/FM, AUDIO SINGLE CHIP RECEIVER, PDIP16, PLASTIC, MO-001, DIP-16, Receiver IC;
TEA5570N
型号: TEA5570N
厂家: NXP    NXP
描述:

IC AM/FM, AUDIO SINGLE CHIP RECEIVER, PDIP16, PLASTIC, MO-001, DIP-16, Receiver IC

消费电路 商用集成电路 接收器集成电路 光电二极管
文件: 总19页 (文件大小:183K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
TEA5570  
RF/IF circuit for AM/FM radio  
September 1987  
Product specification  
File under Integrated Circuits, IC01  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
GENERAL DESCRIPTION  
The TEA5570 is a monolithic integrated radio circuit for use in portable receivers and clock radios. The IC is also  
applicable to mains-fed AM and AM/FM receivers and car radio-receivers. Apart from the AM/FM switch function the IC  
incorporates for AM a double balanced mixer, 'one-pin' oscillator, i.f. amplifier with a.g.c. and detector, and a level  
detector for tuning indication. The FM circuitry comprises i.f. stages with a symmetrical limiter for a ratio detector. A level  
detector for mono/stereo switch information and/or indication complete the FM part.  
Features  
Simple d.c. switching for AM to FM by only one d.c. contact to ground (no switch contacts in the i.f. channel, a.f. or  
level detector outputs)  
AM and FM gain control  
Low current consumption (I = 6 mA)  
tot  
Low voltage operation (V = 2,7 to 9 V)  
P
Ability to handle large AM signals; good i.f. suppression  
Applicable for inductive, capacitive and diode tuning  
Double smoothing of a.g.c. line  
Short-wave range up to 30 MHz  
Lumped or distributed i.f. selectivity with coil and/or ceramic filters  
AM and a.g.c. output voltage control  
Distribution of PCB wiring provides good frequency stability  
Economic design for 'AM only' receivers.  
QUICK REFERENCE DATA (at T  
= 25 °C)  
amb  
Supply voltage  
Supply current  
V = V  
typ.  
typ.  
5,4 V  
P
7-16  
I
6,2 mA  
7
AM performance (pin 2) for m = 0,3  
Sensitivity  
at V = 10 mV  
V
V
V
typ.  
typ.  
typ.  
typ.  
1,7 µV  
16 µV  
o
i
at S/N = 26 dB  
i
A.F. output voltage at V = 1 mV  
100 mV  
0,5 %  
i
o
Total harmonic distortion at V = 1 mV  
THD  
i
FM performance (pin 1) for f = ± 22,5 kHz  
limiting sensitivity, 3 dB  
V
typ.  
typ.  
typ.  
typ.  
typ.  
110 µV  
65 dB  
100 mV  
0,3 %  
i
Signal-to-noise ratio for V = 1 mV  
S/N  
i
A.F. output voltage at V = 1 mV  
V
o
i
Total harmonic distortion at V = 1 mV  
THD  
AMS  
i
AM suppression at V = 10 mV  
50 dB  
i
PACKAGE OUTLINE  
16-lead DIL; plastic (SOT38); SOT38-1; 1996 July 25.  
September 1987  
2
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Fig.1 Block diagram.  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
RATINGS  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
Supply voltage (pin 7)  
V = V  
max.  
max.  
12 V  
12 V  
P
7-16  
Voltage at pins 4, 5, 9 and 10 to pin 16 (ground)  
Voltage range at pin 8  
V
V
n-16  
8-16  
V ± 0,5 V  
P
Current into pin 5  
I
max.  
3 mA  
5
Total power dissipation  
P
see Fig.2  
55 to  
tot  
Storage temperature range  
Operating ambient temperature range  
T
T
+ 150 °C  
+ 85 °C  
stg  
30 to  
amb  
Fig.2 Power derating curve.  
September 1987  
4
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
D.C. CHARACTERISTICS  
V = 6 V; T  
= 25 °C; measured in Fig.10; unless otherwise specified  
amb  
P
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Supply (pin 7)  
Supply voltage (note 1)  
Voltages  
V = V  
2,4  
5,4  
9,0  
V
P
7-16  
at pin 1 (FM)  
V
V
V
V
V
V
V
1,42  
1,28  
1,42  
0,7  
V
V
V
V
V
V
V
1-16  
at pin 1; I = 50 µA (FM)  
1
1-16  
at pins 2 and 3 (AM)  
at pin 6  
2,3-16  
6-16  
at pin 11  
1,4  
11-16  
13-16  
14-16  
at pin 13  
0,7  
at pin 14  
4,3  
Currents  
Supply current  
I
4,2  
6,2  
8,2  
50  
20  
mA  
µA  
7
Current supplied from pin 1 (FM)  
Current supplied from pin 12  
Current supplied from pin 15  
Current into pin 4 (AM)  
I  
I  
I  
1
µA  
12  
15  
30  
µA  
I
I
I
I
I
0,6  
0,35  
0,3  
0,65  
0,4  
40  
mA  
mA  
mA  
mA  
mA  
mW  
4
5
8
Current into pin 5 (FM) (note 4)  
Current into pin 8 (AM)  
Current into pins 9, 10 (FM)  
Current into pin 14  
9,10  
14  
P
Power consumption  
September 1987  
5
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
A.C. CHARACTERISTICS  
AM performance  
V = 6 V; T  
= 25 °C; r.f. condition: f = 1 MHz, m = 0,3, f = 1 kHz; transfer impedance of the i.f. filter  
i m  
P
amb  
|Z | = v /I = 2,7 k; measured in Fig.10; unless otherwise specified  
tr  
6 4  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
R.F. sensitivity (pin 2)  
at V = 30 mV  
V
3,5  
5,0  
7,0  
µV  
o
i
at S + N/N = 6 dB  
at S + N/N = 26 dB  
at S + N/N = 50 dB  
V
V
V
V
V
1,3  
16  
1
µV  
i
20  
µV  
i
mV  
mV  
mV  
i
Signal handling (THD 10% at m = 0,8)  
200  
80  
i
A.F. output voltage at V = 1 mV  
100  
125  
i
o
Total harmonic distortion  
at V = 100 µV to 100 mV (m = 0,3)  
THD  
THD  
THD  
α
0,5  
1,0  
4,0  
35  
%
%
%
dB  
i
at V = 2 mV (m = 0,8)  
2,5  
10  
i
at V = 200 mV (m = 0,8)  
i
I.F. suppression at V = 30 mV (note 2)  
26  
o
Oscillator voltage (pin 8; note 3)  
at f  
= 1455 kHz  
V
120  
160  
200  
200  
230  
mV  
osc  
8-16  
Indicator current (pin 12) at V = 1 mV  
I
µV  
i
12  
FM performance  
V = 6 V; T  
= 25 °C; i.f. condition: f = 10,7 MHz, f = ± 22,5 kHz, f = 1 kHz; transfer impedance of the i.f. filter  
P
amb  
i
m
|Z | = v /i = 275 ; measured in Fig.10; unless otherwise specified  
tr  
6 5  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
I.F. part  
I.F. sensitivity (adjustable; note 4)  
Input voltage  
at 3 dB before limiting  
at S + N/N = 26 dB  
V
90  
110  
130  
µV  
i
V
V
V
6
µV  
mV  
mV  
%
i
at S + N/N = 65 dB  
1
i
A.F. output voltage at V = 1 mV  
80  
100  
0,3  
50  
125  
i
o
Total harmonic distortion at V = 1 mV  
THD  
AMS  
i
AM suppression (note 5)  
dB  
September 1987  
6
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
PARAMETER  
Indicator/level detector (pin 12)  
Indicator current  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
I
250  
325  
µA  
12  
D.C. output voltage  
at V = 300 µV  
V
0,25  
1,0  
V
V
i
12-16  
at V = 2 mV  
V
i
12-16  
AM to FM switch  
Switching current at V  
< 1 V  
I  
400  
µA  
3-16  
3
Notes to the characteristics  
1. Oscillator operates at V  
> 2,25 V.  
7-16  
Vi1  
2. I.F. suppression is defined as the ratio α = 20 log  
where: V is the input voltage at f = 455 kHz and V is the  
-------  
Vi2  
i1  
i2  
input voltage at f = 1 MHz.  
3. Oscillator voltage at pin 8 can be preset by R (see Fig.10).  
osc  
V 3 16  
4. Maximum current into pin 5 can be adjusted by R1 (see Fig.10); I =  
I when V  
= 800 mv; I = 400 µA.  
---------------  
R1  
5
3
3-16  
3
5. AM suppression is measured with f = 1 kHz, m = 0,3 for AM; f = 400 Hz, f = ± 22,5 kHz for FM.  
m
m
Facility adaptation  
Facility adaptation is achieved as follows (see Fig.10):  
FACILITY  
COMPONENT  
V 3 16  
FM sensitivity  
R1 fixes the current at pin 5 (I =  
400 µA)  
---------------  
R1  
5
(gain adjustable ± 10 dB; see note 4)  
AM sensitivity  
R11 and coil tapping  
AM oscillator biasing  
AM output voltage  
AM a.g.c. setting  
R
osc  
R7, R11  
R7  
September 1987  
7
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
Typical graphs  
reference level 0 dB = 100 mV  
(1) A.G.C. range (figure of merit, FOM).  
Fig.3 Signal, noise and distortion as a function of input voltage (V ). Measured at f = 1 MHz in test circuit Fig.10.  
i
i
sensitivity (V ) at V = 30 mV; m = 0,3.  
i
o
− − − output voltage (V ) at V = 2 mV; m = 0,3.  
o
i
Fig.4 Sensitivity (V ), output voltage (V ) as a function of temperature behaviour (T  
). Measured at f = 1 MHz  
i
i
o
amb  
in test circuit Fig.10.  
September 1987  
8
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
sensitivity (V ) at V = 30 V; m = 0,3: 6,0 V application.  
i
o
- - sensitivity (V ) at V = 30 mV; m = 0,3: 4,5 V application.  
i
o
− − − − − output voltage (V ) at V = 0,2 mV; m = 0,3.  
o
i
Fig.5 Sensitivity (V ) and output voltage (V ) as a function of supply voltage (V ). Measured at f = 1 MHz in test  
i
o
P
i
circuit Fig.10, for application V = 6 V. Also shown is the sensitivity for V = 4,5 V application (Fig.16).  
P
P
Fig.6 Signal, noise and distortion as a function of input voltage (V ). Measured at f = 10,7 MHz  
i
i
in test circuit Fig.10.  
September 1987  
9
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
sensitivity at 3 dB limiting.  
− − − output voltage (V ) at V = 1 mV; f = ± 22 kHz.  
o
i
Fig.7 Sensitivity (V ), output voltage (V ) as a function of temperature behaviour (T ).  
amb  
i
o
Measured at f = 10,7 MHz in test circuit Fig.10.  
i
sensitivity at 3 dB limiting: V = 6,0 V application.  
P
- - - sensitivity at 3 dB limiting: V = 4,5 V application.  
P
− − − − output voltage (V ) at V = 1 mV; f = ± 22,5 kHz.  
o
i
Fig.8 Sensitivity (V ) and output voltage (V ) as a function of supply voltage (V ).  
i
o
P
Measured at f = 10,7 MHz in test circuit Fig.10.  
i
September 1987  
10  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
Fig.9 Indicator output current (I ) and d.c. output voltage (V  
): AM f = 1 MHz; FM f = 10,7 MHz as a function  
= 5 k.  
12  
12-16  
12-16  
i
i
of input voltage (V ). Measured in Fig.10; V = 6 V; R  
i
P
September 1987  
11  
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Coil data  
The transfer impedance of the i.f. filter is:  
AM: |Z | = v /i = 2,7 k(SFZ 455A).  
tr  
6 4  
FM: |Z | = v /i = 275 (SFE 10,7 MS).  
tr  
6 5  
See also Figs 11, 12, 13 and 14.  
Fig.10 Test circuit.  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
COIL DATA  
AM i.f. coils (Fig.10)  
N1  
N2  
N3  
= 73  
= 73  
= 9  
C16 = 180 pF (internal)  
Wire = 0,07 mm dia.  
Fig.11 I.F. bandpass filter (L1). TOKO sample no. 7 MC-7 P.  
N1  
N2  
= 90  
= 7  
Wire = 0,07 mm dia.  
Fig.12 Oscillator coil (L2). TOKO sample no. 7 BR-7 P.  
13  
September 1987  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
FM i.f. coils (Fig.10)  
N1  
N2  
N3  
= 5  
= 5  
= 4  
C19 = 82 pF (internal)  
Wire = 0,1 mm dia.  
Fig.13 Primary ratio detector coil (L3). TOKO sample no. 119 AN-7 P.  
N1  
= 2  
N2  
N3  
= 6  
= 6  
C20 = 68 pF (internal)  
Wire = 0,1 mm dia.  
Fig.14 Secondary ratio detector coil (L4). TOKO sample no. 119 AN-7 P.  
September 1987  
14  
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APPLICATION INFORMATION  
Figs 15 and 17 show the circuit diagrams for the application of 6 V AM MW/LW and 4,5 V AM/FM channels respectively, using the TEA5570. Fig.16  
shows the circuitry of the TEA5570.  
Coil data  
L3  
N1 = 73  
N2 = 73  
L4 N1 = 146  
N2 =  
C = 180 pF  
L5  
N1 = 90  
N2 = 6  
9
N3 =  
9
C = 180 pF  
Fig.15 Typical application circuit for 6 V AM MW/LW reception using the TEA5570.  
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Fig.16 TEA5570 circuit diagram.  
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Coil data  
L2  
N1 = 3  
L3  
N1 = 33  
N2 = 113  
L4  
N1 = 90  
N2 = 6  
L5  
N1 = 33  
N2 = 113  
L6  
N1 = 50  
N2 = 8  
N2 = 50  
N3 = 1  
N3 =  
9
N3 =  
9
N3 = 4,5  
N4 = 6,5  
C = 82 pF  
C = 82 pF  
C = 180 pF  
Fig.17 Typical application circuit for 4,5 V AM/FM reception using the TEA5570 with coils and single-tuned ratio  
detector (with silicon diodes).  
DETAILED APPLICATION INFORMATION WILL BE SUPPLIED ON REQUEST.  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
PACKAGE OUTLINE  
DIP16: plastic dual in-line package; 16 leads (300 mil); long body  
SOT38-1  
D
M
E
A
2
A
A
1
L
c
e
w M  
Z
b
1
(e )  
1
b
16  
9
M
H
pin 1 index  
E
1
8
0
5
10 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
(1)  
Z
A
A
A
2
(1)  
(1)  
1
w
UNIT  
mm  
b
b
c
D
E
e
e
L
M
M
H
1
1
E
max.  
max.  
min.  
max.  
1.40  
1.14  
0.53  
0.38  
0.32  
0.23  
21.8  
21.4  
6.48  
6.20  
3.9  
3.4  
8.25  
7.80  
9.5  
8.3  
4.7  
0.51  
3.7  
2.54  
0.10  
7.62  
0.30  
0.254  
0.01  
2.2  
0.021  
0.015  
0.013  
0.009  
0.86  
0.84  
0.32  
0.31  
0.055  
0.045  
0.26  
0.24  
0.15  
0.13  
0.37  
0.33  
inches  
0.19  
0.020  
0.15  
0.087  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-10-02  
95-01-19  
SOT38-1  
050G09  
MO-001AE  
September 1987  
18  
Philips Semiconductors  
Product specification  
RF/IF circuit for AM/FM radio  
TEA5570  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
SOLDERING  
Introduction  
specified maximum storage temperature (T  
). If the  
stg max  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Repairing soldered joints  
Apply a low voltage soldering iron (less than 24 V) to the  
lead(s) of the package, below the seating plane or not  
more than 2 mm above it. If the temperature of the  
soldering iron bit is less than 300 °C it may remain in  
contact for up to 10 seconds. If the bit temperature is  
between 300 and 400 °C, contact may be up to 5 seconds.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
Soldering by dipping or by wave  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joint for more than 5 seconds. The total contact  
time of successive solder waves must not exceed  
5 seconds.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
September 1987  
19  

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